| |
 |
|
Class Information
Number: 257/382
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
Description: Subject matter wherein the device has an electrical contact to its source region or drain region wherein the contact is made of a refractory or platinum group metal, or of other material which has a melting point above that of the iron group of metals and which is resistant to heat (e.g., of polysilicon, tungsten or silicide).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432560 |
Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same |
Oct. 7, 2008 |
| 7411284 |
Accessible electronic storage apparatus |
Aug. 12, 2008 |
| 7405449 |
Semiconductor device and method of manufacturing the same |
Jul. 29, 2008 |
| 7402872 |
Method for forming an integrated circuit |
Jul. 22, 2008 |
| 7397131 |
Self-aligned semiconductor contact structures |
Jul. 8, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7385258 |
Transistors having v-shape source/drain metal contacts |
Jun. 10, 2008 |
| 7385259 |
Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device |
Jun. 10, 2008 |
| 7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Jun. 10, 2008 |
| 7355255 |
Nickel silicide including indium and a method of manufacture therefor |
Apr. 8, 2008 |
| 7355254 |
Pinning layer for low resistivity N-type source drain ohmic contacts |
Apr. 8, 2008 |
| 7348613 |
CMOS imager with selectively silicided gates |
Mar. 25, 2008 |
| 7342273 |
Applying epitaxial silicon in disposable spacer flow |
Mar. 11, 2008 |
| 7342275 |
Semiconductor device and method of manufacturing the same |
Mar. 11, 2008 |
| 7342284 |
Semiconductor MOS transistor device and method for making the same |
Mar. 11, 2008 |
| 7342286 |
Electrical node of transistor and method of forming the same |
Mar. 11, 2008 |
| 7329927 |
Integrated circuit devices having uniform silicide junctions |
Feb. 12, 2008 |
| 7326648 |
Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern |
Feb. 5, 2008 |
| 7327001 |
PMOS transistor with compressive dielectric capping layer |
Feb. 5, 2008 |
| 7323753 |
MOS transistor circuit and voltage-boosting booster circuit |
Jan. 29, 2008 |
| 7321152 |
Thin-film transistor and method of fabricating the same |
Jan. 22, 2008 |
| 7314789 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Jan. 1, 2008 |
| 7309901 |
Field effect transistors (FETs) with multiple and/or staircase silicide |
Dec. 18, 2007 |
| 7294935 |
Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide |
Nov. 13, 2007 |
| 7271455 |
Formation of fully silicided metal gate using dual self-aligned silicide process |
Sep. 18, 2007 |
| 7265400 |
Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same |
Sep. 4, 2007 |
| 7265424 |
Fin Field-effect transistor and method for producing a fin field effect-transistor |
Sep. 4, 2007 |
| 7265425 |
Semiconductor device employing an extension spacer and a method of forming the same |
Sep. 4, 2007 |
| 7259432 |
Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device |
Aug. 21, 2007 |
| 7253481 |
High performance MOS device with graded silicide |
Aug. 7, 2007 |
| 7247913 |
Semiconductor device having a Schottky source/drain transistor |
Jul. 24, 2007 |
| 7247915 |
Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology |
Jul. 24, 2007 |
| 7238991 |
Semiconductor device with improved protection from electrostatic discharge |
Jul. 3, 2007 |
| 7230286 |
Vertical FET with nanowire channels and a silicided bottom contact |
Jun. 12, 2007 |
| 7230304 |
Electric contacts and method of manufacturing thereof, and vacuum interrupter and vacuum circuit breaker using thereof |
Jun. 12, 2007 |
| 7227224 |
MOS transistor with elevated source and drain structures and method of fabrication thereof |
Jun. 5, 2007 |
| 7205609 |
Methods of forming semiconductor devices including fin structures and related devices |
Apr. 17, 2007 |
| 7202147 |
Semiconductor device and method for fabricating the same |
Apr. 10, 2007 |
| 7199420 |
Semiconductor device |
Apr. 3, 2007 |
| 7196382 |
Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer |
Mar. 27, 2007 |
| 7192825 |
Semiconductor memory device and method for fabricating the same |
Mar. 20, 2007 |
| 7187040 |
Thin-film transistor and method of fabricating the same |
Mar. 6, 2007 |
| 7176523 |
Power mosfet having conductor plug structured contacts |
Feb. 13, 2007 |
| 7176525 |
Process for production of SOI substrate and process for production of semiconductor device |
Feb. 13, 2007 |
| 7176534 |
Low resistance T-gate MOSFET device using a damascene gate process and an innovative oxide removal etch |
Feb. 13, 2007 |
| 7173312 |
Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification |
Feb. 6, 2007 |
| 7169659 |
Method to selectively recess ETCH regions on a wafer surface using capoly as a mask |
Jan. 30, 2007 |
| 7164173 |
Method for manufacturing MOS transistor and semiconductor device employing MOS transistor made using the same |
Jan. 16, 2007 |
| 7157374 |
Method for removing a cap from the gate of an embedded silicon germanium semiconductor device |
Jan. 2, 2007 |
| 7157777 |
Semiconductor device including silicided source and drain electrodes |
Jan. 2, 2007 |
|
|
|
