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Class Information
Number: 257/382
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
Description: Subject matter wherein the device has an electrical contact to its source region or drain region wherein the contact is made of a refractory or platinum group metal, or of other material which has a melting point above that of the iron group of metals and which is resistant to heat (e.g., of polysilicon, tungsten or silicide).

Sub-classes under this class:

Class Number Class Name Patents
257/383 Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium) 356
257/384 Including silicide 655
257/385 Multiple polysilicon layers 169

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

Patent Number Title Of Patent Date Issued
8692335 Source/drain region, contact hole and method for forming the same Apr. 8, 2014
8685809 Semiconductor structures having improved contact resistance Apr. 1, 2014
8674454 Lateral bipolar junction transistor Mar. 18, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8648425 Resistors formed based on metal-oxide-semiconductor structures Feb. 11, 2014
8637937 Through silicon via for use in integrated circuit chips Jan. 28, 2014
8629510 Two-step silicide formation Jan. 14, 2014
8614107 Liner-free tungsten contact Dec. 24, 2013
8614106 Liner-free tungsten contact Dec. 24, 2013
8604555 Semiconductor structure and manufacturing method of the same Dec. 10, 2013
8592916 Selectively raised source/drain transistor Nov. 26, 2013
8581348 Semiconductor device with transistor local interconnects Nov. 12, 2013
8581350 Field effect transistor and semiconductor device, and method for manufacturing same Nov. 12, 2013
8569803 BEOL compatible FET structrure Oct. 29, 2013
8569837 MOS devices having elevated source/drain regions Oct. 29, 2013
8563412 Method of fabricating semiconductor device Oct. 22, 2013
8545962 Nano-fiber arrayed surfaces Oct. 1, 2013
8513742 Method for manufacturing contact and semiconductor device having said contact Aug. 20, 2013
8513122 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Aug. 20, 2013
8482029 Semiconductor device and integrated circuit including the semiconductor device Jul. 9, 2013
8482076 Method and structure for differential silicide and recessed or raised source/drain to improve field effect transistor Jul. 9, 2013
8482079 Semiconductor device and method of manufacturing the same Jul. 9, 2013
8482084 SOI schottky source/drain device structure to control encroachment and delamination of silicide Jul. 9, 2013
8476680 Semiconductor device and method for manufacturing the same Jul. 2, 2013
8466555 Gold-free ohmic contacts Jun. 18, 2013
8466509 Semiconductor device having a contact plug connecting to a silicide film formed on a diffusion region of a flash memory cell Jun. 18, 2013
8450200 Method for stacked contact with low aspect ratio May. 28, 2013
8450807 MOSFETs with reduced contact resistance May. 28, 2013
8436404 Self-aligned contacts May. 7, 2013
8433552 Circuit simulation method Apr. 30, 2013
8421159 Raised source/drain field effect transistor Apr. 16, 2013
8415748 Use of epitaxial Ni silicide Apr. 9, 2013
8405155 Semiconductor structure with gate structure, source/drain region and recess filling with epitaxial layer Mar. 26, 2013
8405132 Self-aligned selective metal contact to source/drain diffusion region Mar. 26, 2013
8373239 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Feb. 12, 2013
8362570 Method for making complementary P and N MOSFET transistors, electronic device including such transistors, and processor including at least one such device Jan. 29, 2013
8358012 Metal semiconductor alloy structure for low contact resistance Jan. 22, 2013
8344465 Semiconductor device Jan. 1, 2013
8344461 Solid-state imaging device and manufacturing method for the same Jan. 1, 2013
8344452 Metal gate transistors with raised source and drain regions formed on heavily doped substrate Jan. 1, 2013
8330230 Semiconductor device pad having the same voltage level as that of a semiconductor substrate Dec. 11, 2012
8310002 Semiconductor device and method of forming the same Nov. 13, 2012
8304819 Semiconductor device including metal silicide layer and method for manufacturing the same Nov. 6, 2012
8304840 Spacer structures of a semiconductor device Nov. 6, 2012
8299542 MOSFET with multiple fully silicided gate and method for making the same Oct. 30, 2012
8299541 Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor Oct. 30, 2012
8299535 Delta monolayer dopants epitaxy for embedded source/drain silicide Oct. 30, 2012
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8298934 Structure and method of creating entirely self-aligned metallic contacts Oct. 30, 2012
8294219 Nonvolatile memory element including resistive switching metal oxide layers Oct. 23, 2012

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

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