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Class Information
Number: 257/382
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
Description: Subject matter wherein the device has an electrical contact to its source region or drain region wherein the contact is made of a refractory or platinum group metal, or of other material which has a melting point above that of the iron group of metals and which is resistant to heat (e.g., of polysilicon, tungsten or silicide).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7605414 |
MOS transistors having low-resistance salicide gates and a self-aligned contact between them |
Oct. 20, 2009 |
| 7569891 |
Semiconductor device with reduced contact resistance and method for manufacturing the same |
Aug. 4, 2009 |
| 7569896 |
Transistors with stressed channels |
Aug. 4, 2009 |
| 7564104 |
Low ohmic layout technique for MOS transistors |
Jul. 21, 2009 |
| 7564061 |
Field effect transistor and production method thereof |
Jul. 21, 2009 |
| 7560783 |
Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method |
Jul. 14, 2009 |
| 7560758 |
MOSFETs comprising source/drain recesses with slanted sidewall surfaces, and methods for fabricating the same |
Jul. 14, 2009 |
| 7560753 |
Field effect transistor with thin gate electrode and method of fabricating same |
Jul. 14, 2009 |
| 7556954 |
MOS transistor and manufacturing method thereof |
Jul. 7, 2009 |
| 7550807 |
Semiconductor memory |
Jun. 23, 2009 |
| 7545006 |
CMOS devices with graded silicide regions |
Jun. 9, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7538398 |
System and method for forming a semiconductor device source/drain contact |
May. 26, 2009 |
| 7525160 |
Multigate device with recessed strain regions |
Apr. 28, 2009 |
| 7514714 |
Thin film power MOS transistor, apparatus, and method |
Apr. 7, 2009 |
| 7514756 |
Semiconductor device with MISFET |
Apr. 7, 2009 |
| 7511349 |
Contact or via hole structure with enlarged bottom critical dimension |
Mar. 31, 2009 |
| 7511348 |
MOS transistors with selectively strained channels |
Mar. 31, 2009 |
| 7511350 |
Nickel alloy silicide including indium and a method of manufacture therefor |
Mar. 31, 2009 |
| 7508053 |
Semiconductor MOS transistor device and method for making the same |
Mar. 24, 2009 |
| 7501673 |
Semiconductor device multilayer structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method |
Mar. 10, 2009 |
| 7498626 |
Semiconductor device and method of manufacturing the same |
Mar. 3, 2009 |
| 7498640 |
Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby |
Mar. 3, 2009 |
| 7498641 |
Partial replacement silicide gate |
Mar. 3, 2009 |
| 7495292 |
Integrated circuit devices having pad contact plugs in the cell array and peripheral circuit regions of the integrated circuit substrate |
Feb. 24, 2009 |
| 7489027 |
Accessible electronic storage apparatus |
Feb. 10, 2009 |
| 7488637 |
CMOS image sensor and method for forming the same |
Feb. 10, 2009 |
| 7482668 |
Semiconductor device |
Jan. 27, 2009 |
| 7476943 |
Semiconductor device having diffusion layers as bit lines and method for manufacturing the same |
Jan. 13, 2009 |
| 7473627 |
Semiconducting device having a structure to improve contact processing margin, and method of fabricating the same |
Jan. 6, 2009 |
| 7470972 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress |
Dec. 30, 2008 |
| 7465996 |
Semiconductor device and method for fabricating the same |
Dec. 16, 2008 |
| 7456472 |
Semiconductor device and manufacturing method thereof |
Nov. 25, 2008 |
| 7453120 |
Semiconductor structure |
Nov. 18, 2008 |
| 7448395 |
Process method to facilitate silicidation |
Nov. 11, 2008 |
| 7446044 |
Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same |
Nov. 4, 2008 |
| 7446379 |
Transistor with dopant-bearing metal in source and drain |
Nov. 4, 2008 |
| 7439571 |
Method for fabricating metal gate structures |
Oct. 21, 2008 |
| 7439566 |
Semiconductor memory device having metal-insulator transition film resistor |
Oct. 21, 2008 |
| 7436017 |
Semiconductor integrated circuit using a selective disposable spacer |
Oct. 14, 2008 |
| 7432560 |
Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same |
Oct. 7, 2008 |
| 7411284 |
Accessible electronic storage apparatus |
Aug. 12, 2008 |
| 7405449 |
Semiconductor device and method of manufacturing the same |
Jul. 29, 2008 |
| 7402872 |
Method for forming an integrated circuit |
Jul. 22, 2008 |
| 7397131 |
Self-aligned semiconductor contact structures |
Jul. 8, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide |
Jun. 10, 2008 |
| 7385258 |
Transistors having v-shape source/drain metal contacts |
Jun. 10, 2008 |
| 7385259 |
Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device |
Jun. 10, 2008 |
| 7355255 |
Nickel silicide including indium and a method of manufacture therefor |
Apr. 8, 2008 |
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