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Class Information
Number: 257/38
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Tunneling through region of reduced conductivity > At least one electrode layer of semiconductor material > Three or more electrode device
Description: Subject matter wherein the tunneling device has three or more electrodes, at least one of which is made of a semiconductive material.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7449713 |
Semiconductor memory device |
Nov. 11, 2008 |
| 7439089 |
Method of fabricating array substrate having color filter on thin film transistor structure |
Oct. 21, 2008 |
| 7400017 |
Reverse conducting semiconductor device and a fabrication method thereof |
Jul. 15, 2008 |
| 7378328 |
Method of fabricating memory device utilizing carbon nanotubes |
May. 27, 2008 |
| 7250648 |
Ferroelectric rare-earth manganese-titanium oxides |
Jul. 31, 2007 |
| 7196351 |
Forming phase change memories |
Mar. 27, 2007 |
| 7183568 |
Piezoelectric array with strain dependant conducting elements and method therefor |
Feb. 27, 2007 |
| 7157731 |
Semiconductor device and its manufacture |
Jan. 2, 2007 |
| 6844571 |
III-nitride light-emitting device with increased light generating capability |
Jan. 18, 2005 |
| 6833556 |
Insulated gate field effect transistor having passivated schottky barriers to the channel |
Dec. 21, 2004 |
| 6479863 |
Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell |
Nov. 12, 2002 |
| 6344659 |
Superconducting transistor arrangement and a method relating thereto |
Feb. 5, 2002 |
| 6023124 |
Electron emission device and display device using the same |
Feb. 8, 2000 |
| 6020596 |
Superconducting device including an isolation layer |
Feb. 1, 2000 |
| 5962864 |
Gated resonant tunneling device and fabricating method thereof |
Oct. 5, 1999 |
| 5717222 |
Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same |
Feb. 10, 1998 |
| 5682041 |
Electronic part incorporating artificial super lattice |
Oct. 28, 1997 |
| 5665979 |
Coulomb-blockade element and method of manufacturing the same |
Sep. 9, 1997 |
| 5621223 |
Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same |
Apr. 15, 1997 |
| 5594257 |
Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same |
Jan. 14, 1997 |
| 5552374 |
Oxide superconducting a transistor in crank-shaped configuration |
Sep. 3, 1996 |
| 5550389 |
Superconducting device |
Aug. 27, 1996 |
| 5528052 |
Superconductive-channel electric field-effect drive |
Jun. 18, 1996 |
| 5521862 |
Apparatus and method for storing information in magnetic fields |
May. 28, 1996 |
| 5506197 |
Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material |
Apr. 9, 1996 |
| 5485017 |
Semiconductor device and method of manufacturing same |
Jan. 16, 1996 |
| 5471069 |
Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film |
Nov. 28, 1995 |
| 5462918 |
Superconducting field effect device with vertical channel formed of oxide superconductor material |
Oct. 31, 1995 |
| 5446015 |
Superconducting device having a reduced thickness of oxide superconducting layer |
Aug. 29, 1995 |
| 5442196 |
Superconducting device |
Aug. 15, 1995 |
| 5430013 |
Superconducting thin film formed of oxide superconductor material, superconducting current path and superconducting device utilizing the superconducting thin film |
Jul. 4, 1995 |
| 5413982 |
Field effect transistor having c-axis channel layer |
May. 9, 1995 |
| 5401714 |
Field-effect device with a superconducting channel |
Mar. 28, 1995 |
| 5357125 |
Power switching semiconductor device including SI thyristor and MOSFET connected in cascade |
Oct. 18, 1994 |
| 5357120 |
Compound semiconductor device and electric power converting apparatus using such device |
Oct. 18, 1994 |
| 5352905 |
Semiconductor surge suppressor |
Oct. 4, 1994 |
| 5345099 |
Semiconductor device |
Sep. 6, 1994 |
| 5323021 |
Semiconductor integrated circuit device having diode and bipolar transistor held in contact through oxygen-leakage film with emitter electrode |
Jun. 21, 1994 |
| 5318952 |
A superconducting transistor wherein hot electrons are injected into and trapped from the base |
Jun. 7, 1994 |
| 5311037 |
Superconducting device |
May. 10, 1994 |
| 5306927 |
High current amplifier utilizing a josephson junction Schottky diode three terminal device |
Apr. 26, 1994 |
| 5272358 |
Superconducting device |
Dec. 21, 1993 |
| 5258625 |
Interband single-electron tunnel transistor and integrated circuit |
Nov. 2, 1993 |
| 5239187 |
Josephson effect semiconductor device with channel layers of semiconductor and superconductor materials |
Aug. 24, 1993 |
| 5232905 |
High T.sub.c superconducting device with weak link between two superconducting electrodes |
Aug. 3, 1993 |
| 5231295 |
Superconducting field effect transistor |
Jul. 27, 1993 |
| 5160983 |
Superconducting device |
Nov. 3, 1992 |
| 5106822 |
Transistor with superconducting collector, base, and emitter separated by non-superconducting barrier layers |
Apr. 21, 1992 |
| 5071832 |
Field effect type Josephson transistor |
Dec. 10, 1991 |
| 4939559 |
Dual electron injector structures using a conductive oxide between injectors |
Jul. 3, 1990 |
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