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Class Information
Number: 257/377
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide)
Description: Subject matter wherein the device contains electrical interconnections to the source and/or drain regions of the IGFETs which are made of polycrystalline silicon (e.g., polysilicon laminated with a silicide).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7629646 |
Trench MOSFET with terraced gate and manufacturing method thereof |
Dec. 8, 2009 |
| 7629655 |
Semiconductor device with multiple silicide regions |
Dec. 8, 2009 |
| 7615829 |
Elevated source and drain elements for strained-channel heterojuntion field-effect transistors |
Nov. 10, 2009 |
| 7612416 |
Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same |
Nov. 3, 2009 |
| 7573106 |
Semiconductor device and manufacturing method therefor |
Aug. 11, 2009 |
| 7528450 |
Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor |
May. 5, 2009 |
| 7498641 |
Partial replacement silicide gate |
Mar. 3, 2009 |
| 7488637 |
CMOS image sensor and method for forming the same |
Feb. 10, 2009 |
| 7482668 |
Semiconductor device |
Jan. 27, 2009 |
| 7479682 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jan. 20, 2009 |
| 7473623 |
Providing stress uniformity in a semiconductor device |
Jan. 6, 2009 |
| 7453133 |
Silicide/semiconductor structure and method of fabrication |
Nov. 18, 2008 |
| 7432559 |
Silicide formation on SiGe |
Oct. 7, 2008 |
| 7427796 |
Semiconductor device and method of manufacturing a semiconductor device |
Sep. 23, 2008 |
| 7419913 |
Methods of forming openings into dielectric material |
Sep. 2, 2008 |
| 7405450 |
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon |
Jul. 29, 2008 |
| 7394156 |
Semiconductor integrated circuit device and method of producing the same |
Jul. 1, 2008 |
| 7355248 |
Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same |
Apr. 8, 2008 |
| 7329927 |
Integrated circuit devices having uniform silicide junctions |
Feb. 12, 2008 |
| 7327001 |
PMOS transistor with compressive dielectric capping layer |
Feb. 5, 2008 |
| 7326648 |
Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern |
Feb. 5, 2008 |
| 7297618 |
Fully silicided gate electrodes and method of making the same |
Nov. 20, 2007 |
| 7271412 |
Active matrix organic light emitting device having series thin film transistor, and fabrication method therefor |
Sep. 18, 2007 |
| 7265400 |
Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same |
Sep. 4, 2007 |
| 7265424 |
Fin Field-effect transistor and method for producing a fin field effect-transistor |
Sep. 4, 2007 |
| 7265428 |
Semiconductor device having NMOSFET and PMOSFET and manufacturing method thereof |
Sep. 4, 2007 |
| 7247915 |
Cobalt/nickel bi-layer silicide process for very narrow line polysilicon gate technology |
Jul. 24, 2007 |
| 7244996 |
Structure of a field effect transistor having metallic silicide and manufacturing method thereof |
Jul. 17, 2007 |
| 7244977 |
Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device |
Jul. 17, 2007 |
| 7244988 |
Semiconductor apparatus and method of manufacturing the same |
Jul. 17, 2007 |
| 7230286 |
Vertical FET with nanowire channels and a silicided bottom contact |
Jun. 12, 2007 |
| 7208805 |
Structures comprising a layer free of nitrogen between silicon nitride and photoresist |
Apr. 24, 2007 |
| 7202132 |
Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs |
Apr. 10, 2007 |
| 7190035 |
Semiconductor device having elevated source/drain on source region and drain region |
Mar. 13, 2007 |
| 7190036 |
Transistor mobility improvement by adjusting stress in shallow trench isolation |
Mar. 13, 2007 |
| 7189644 |
CMOS device integration for low external resistance |
Mar. 13, 2007 |
| 7176523 |
Power mosfet having conductor plug structured contacts |
Feb. 13, 2007 |
| 7176533 |
Semiconductor devices having contact plugs including polysilicon doped with an impurity having a lesser diffusion coefficient than phosphorus |
Feb. 13, 2007 |
| 7176525 |
Process for production of SOI substrate and process for production of semiconductor device |
Feb. 13, 2007 |
| 7145205 |
Semiconductor device |
Dec. 5, 2006 |
| 7135774 |
Heat resistant ohmic electrode and method of manufacturing the same |
Nov. 14, 2006 |
| 7129547 |
Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region |
Oct. 31, 2006 |
| 7115949 |
Method of forming a semiconductor device in a semiconductor layer and structure thereof |
Oct. 3, 2006 |
| 7109109 |
Contact plug in semiconductor device and method of forming the same |
Sep. 19, 2006 |
| 7102201 |
Strained semiconductor device structures |
Sep. 5, 2006 |
| 7102167 |
Method and system for providing a CMOS output stage utilizing a buried power buss |
Sep. 5, 2006 |
| 7098478 |
Semiconductor memory device using vertical-channel transistors |
Aug. 29, 2006 |
| 7081655 |
Formation of abrupt junctions in devices by using silicide growth dopant snowplow effect |
Jul. 25, 2006 |
| 7075157 |
Method of manufacturing a semiconductor integrated circuit device |
Jul. 11, 2006 |
| 7075158 |
Semiconductor device and method of manufacturing the same |
Jul. 11, 2006 |
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