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Class Information
Number: 257/374
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action > Dielectric isolation means (e.g., dielectric layer in vertical grooves)
Description: Subject matter wherein the means to prevent latchup includes means to dielectrically isolate the individual IGFETs from each other.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13

Patent Number Title Of Patent Date Issued
8709901 Method of forming an isolation structure Apr. 29, 2014
8692266 Circuit substrate structure Apr. 8, 2014
8692299 Two-step shallow trench isolation (STI) process Apr. 8, 2014
8686512 Elevation of transistor channels to reduce impact of shallow trench isolation on transistor performance Apr. 1, 2014
8674416 Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region Mar. 18, 2014
8669621 Semiconductor device and method of manufacturing semiconductor device Mar. 11, 2014
8643117 Semiconductor device, method for manufacturing same, and semiconductor storage device Feb. 4, 2014
8643109 Isolation region fabrication for replacement gate processing Feb. 4, 2014
8637935 Semiconductor device including embedded isolation regions and method for forming the same Jan. 28, 2014
8633520 Semiconductor device Jan. 21, 2014
8633534 Transistor channel mobility using alternate gate dielectric materials Jan. 21, 2014
8629512 Gate stack of fin field effect transistor with slanted sidewalls Jan. 14, 2014
8610189 Semiconductor device enabling further microfabrication Dec. 17, 2013
8604549 Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise Dec. 10, 2013
8592915 Doped oxide for shallow trench isolation (STI) Nov. 26, 2013
8592918 Forming inter-device STI regions and intra-device STI regions using different dielectric materials Nov. 26, 2013
8592271 Metal-gate CMOS device and fabrication method thereof Nov. 26, 2013
8580625 Metal oxide semiconductor transistor and method of manufacturing the same Nov. 12, 2013
8575624 Semiconductor device Nov. 5, 2013
8574982 Implementing eDRAM stacked FET structure Nov. 5, 2013
8569839 Semiconductor device and manufacturing method thereof Oct. 29, 2013
8558319 Semiconductor memory devices and methods of manufacturing the same Oct. 15, 2013
RE44532 Method for manufacturing a transistor of a semiconductor memory device Oct. 8, 2013
8552506 Semiconductor device and method of manufacturing the same Oct. 8, 2013
8551861 Semiconductor device and method for manufacturing the same Oct. 8, 2013
8546888 Isolation regions Oct. 1, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8530974 CMOS structure having multiple threshold voltage devices Sep. 10, 2013
8526221 Semiconductor integrated circuit for low and high voltage operations Sep. 3, 2013
8525273 Integrated circuit devices including device isolation structures and methods of fabricating the same Sep. 3, 2013
8525188 Shallow trench isolation structure and method for forming the same Sep. 3, 2013
8519484 Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same Aug. 27, 2013
8513743 Field effect transistor with channel region having portions with different band structures for suppressed corner leakage Aug. 20, 2013
8497528 Method for fabricating a strained structure Jul. 30, 2013
8492820 Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit Jul. 23, 2013
8445943 Semiconductor integrated circuit device May. 21, 2013
8445356 Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same May. 21, 2013
8432000 Trench MOS barrier schottky rectifier with a planar surface using CMP techniques Apr. 30, 2013
8421125 Semiconductor device with deviation compensation and method for fabricating the same Apr. 16, 2013
8410554 Method, structure and design structure for customizing history effects of SOI circuits Apr. 2, 2013
8405156 Semiconductor device and manufacturing method thereof Mar. 26, 2013
8407634 Analysis of stress impact on transistor performance Mar. 26, 2013
8383490 Borderless contact for ultra-thin body devices Feb. 26, 2013
8362564 Isolated epitaxial modulation device Jan. 29, 2013
8357988 Die seal ring Jan. 22, 2013
8350335 Semiconductor device including off-set spacers formed as a portion of the sidewall Jan. 8, 2013
8350336 Semiconductor device and method of manufacturing the same Jan. 8, 2013
8350343 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage Jan. 8, 2013
8319290 Trench MOS barrier schottky rectifier with a planar surface using CMP techniques Nov. 27, 2012
8319289 Power MISFET, semiconductor device and DC/DC converter Nov. 27, 2012

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