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Class Information
Number: 257/373
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action
Description: Subject matter wherein the means for preventing latchup includes a pn junction for collecting minority carriers injected into the device to prevent operation of parasitic bipolar transistors which are otherwise capable of forming part of a parasitic regenerative switching structure.

Sub-classes under this class:

Class Number	Class Name	Patents
257/374	Dielectric isolation means (e.g., dielectric layer in vertical grooves)	441
257/376	With barrier region of reduced minority carrier lifetime (e.g., heavily doped p+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region)	187
257/375	With means to reduce substrate spreading resistance (e.g., heavily doped substrate)	67

Patents under this class:

1 2 3

Patent Number	Title Of Patent	Date Issued
7595534	Layers in substrate wafers	Sep. 29, 2009
7541652	Substrate coupled noise isolation for integrated circuits	Jun. 2, 2009
7482642	Bipolar transistors having controllable temperature coefficient of current gain	Jan. 27, 2009
7474011	Method for improved single event latch up resistance in an integrated circuit	Jan. 6, 2009
7436041	Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier	Oct. 14, 2008
7394156	Semiconductor integrated circuit device and method of producing the same	Jul. 1, 2008
7394136	High performance semiconductor devices fabricated with strain-induced processes and methods for making same	Jul. 1, 2008
7355250	Electrostatic discharge device with controllable holding current	Apr. 8, 2008
7326977	Low noise field effect transistor	Feb. 5, 2008
7304354	Buried guard ring and radiation hardened isolation structures and fabrication methods	Dec. 4, 2007
7276772	Semiconductor device	Oct. 2, 2007
7274073	Integrated circuit with bulk and SOI devices connected with an epitaxial region	Sep. 25, 2007
7205628	Semiconductor device	Apr. 17, 2007
7205614	High density ROM cell	Apr. 17, 2007
7176527	Semiconductor device and method of fabricating same	Feb. 13, 2007
7145206	MOS field effect transistor with reduced parasitic substrate conduction	Dec. 5, 2006
7098512	Layout patterns for deep well region to facilitate routing body-bias voltage	Aug. 29, 2006
7071528	Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof	Jul. 4, 2006
7030461	Device for electrostatic discharge protection	Apr. 18, 2006
7005704	Insulated gate drive semiconductor device	Feb. 28, 2006
6995432	Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions	Feb. 7, 2006
6995435	Apparatus and circuit having reduced leakage current and method therefor	Feb. 7, 2006
6972466	Bipolar transistors with low base resistance for CMOS integrated circuits	Dec. 6, 2005
6936898	Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions	Aug. 30, 2005
6927442	Charge pump device	Aug. 9, 2005
6917077	Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode	Jul. 12, 2005
6881997	Charge pump device	Apr. 19, 2005
6879023	Seal ring for integrated circuits	Apr. 12, 2005
6864543	High breakdown voltage CMOS device	Mar. 8, 2005
6864525	Charge pump device	Mar. 8, 2005
6822298	Large current capacity semiconductor device	Nov. 23, 2004
6815779	Integrated circuit including protection against polarity inversion of the substrate potential	Nov. 9, 2004
6815777	Semiconductor device, memory system and electronic apparatus	Nov. 9, 2004
6809336	Semiconductor device comprising sense amplifier and manufacturing method thereof	Oct. 26, 2004
6800908	Apparatus and circuit having reduced leakage current and method therefor	Oct. 5, 2004
6791122	Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering	Sep. 14, 2004
6787858	Carrier injection protection structure	Sep. 7, 2004
6781206	Semiconductor device with structure restricting flow of unnecessary current therein	Aug. 24, 2004
6703283	Discontinuous dielectric interface for bipolar transistors	Mar. 9, 2004
6664608	Back-biased MOS device	Dec. 16, 2003
6657264	Layout method of latch-up prevention circuit of a semiconductor device	Dec. 2, 2003
6649455	SOI type MOS element and manufacturing method thereof	Nov. 18, 2003
6649983	Vertical bipolar transistor formed using CMOS processes	Nov. 18, 2003
6630717	CMOS semiconductor circuit with reverse bias applied for reduced power consumption	Oct. 7, 2003
6624482	Method for creating a useful bipolar junction transistor from a parasitic bipolar junction transistor on a MOSFET	Sep. 23, 2003
6624497	Semiconductor device with a reduced mask count buried layer	Sep. 23, 2003
6576962	CMOS SRAM cell with prescribed power-on data state	Jun. 10, 2003
6573563	SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs	Jun. 3, 2003
6570229	Semiconductor device	May. 27, 2003
6559486	Etching mask, process for forming contact holes using same, and semiconductor device made by the process	May. 6, 2003