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Class Information
Number: 257/373
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action
Description: Subject matter wherein the means for preventing latchup includes a pn junction for collecting minority carriers injected into the device to prevent operation of parasitic bipolar transistors which are otherwise capable of forming part of a parasitic regenerative switching structure.










Sub-classes under this class:

Class Number Class Name Patents
257/374 Dielectric isolation means (e.g., dielectric layer in vertical grooves) 609
257/376 With barrier region of reduced minority carrier lifetime (e.g., heavily doped p+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region) 226
257/375 With means to reduce substrate spreading resistance (e.g., heavily doped substrate) 84


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8648427 Electronic device including an integrated circuit with transistors coupled to each other Feb. 11, 2014
8569865 Integrated circuit and production method Oct. 29, 2013
8518778 Method of forming semiconductor structure Aug. 27, 2013
8502336 Semiconductor diode and method of manufacture Aug. 6, 2013
8497195 Method for radiation hardening a semiconductor device Jul. 30, 2013
8492849 High side semiconductor structure Jul. 23, 2013
8390074 Structure and method for latchup improvement using through wafer via latchup guard ring Mar. 5, 2013
8159033 ESD protection device and manufacturing method thereof Apr. 17, 2012
8093145 Methods for operating and fabricating a semiconductor device having a buried guard ring structure Jan. 10, 2012
8084844 Semiconductor device Dec. 27, 2011
8072033 Semiconductor device having elongated electrostatic protection element along long side of semiconductor chip Dec. 6, 2011
7936023 High voltage diode May. 3, 2011
7911003 Semiconductor integrated circuit device Mar. 22, 2011
7863689 Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor Jan. 4, 2011
7847616 Inverter circuit and balanced input inverter circuit Dec. 7, 2010
7804138 Buried guard ring and radiation hardened isolation structures and fabrication methods Sep. 28, 2010
RE41477 Semiconductor device with a reduced mask count buried layer Aug. 10, 2010
7723799 Semiconductor device May. 25, 2010
7675120 Integrated circuit having a multipurpose resistor for suppression of a parasitic transistor or other purposes Mar. 9, 2010
7667288 Systems and methods for voltage distribution via epitaxial layers Feb. 23, 2010
7629654 Buried guard ring structures and fabrication methods Dec. 8, 2009
7595534 Layers in substrate wafers Sep. 29, 2009
7541652 Substrate coupled noise isolation for integrated circuits Jun. 2, 2009
7482642 Bipolar transistors having controllable temperature coefficient of current gain Jan. 27, 2009
7474011 Method for improved single event latch up resistance in an integrated circuit Jan. 6, 2009
7436041 Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier Oct. 14, 2008
7394156 Semiconductor integrated circuit device and method of producing the same Jul. 1, 2008
7394136 High performance semiconductor devices fabricated with strain-induced processes and methods for making same Jul. 1, 2008
7355250 Electrostatic discharge device with controllable holding current Apr. 8, 2008
7326977 Low noise field effect transistor Feb. 5, 2008
7304354 Buried guard ring and radiation hardened isolation structures and fabrication methods Dec. 4, 2007
7276772 Semiconductor device Oct. 2, 2007
7274073 Integrated circuit with bulk and SOI devices connected with an epitaxial region Sep. 25, 2007
7205614 High density ROM cell Apr. 17, 2007
7205628 Semiconductor device Apr. 17, 2007
7176527 Semiconductor device and method of fabricating same Feb. 13, 2007
7145206 MOS field effect transistor with reduced parasitic substrate conduction Dec. 5, 2006
7098512 Layout patterns for deep well region to facilitate routing body-bias voltage Aug. 29, 2006
7071528 Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof Jul. 4, 2006
7030461 Device for electrostatic discharge protection Apr. 18, 2006
7005704 Insulated gate drive semiconductor device Feb. 28, 2006
6995435 Apparatus and circuit having reduced leakage current and method therefor Feb. 7, 2006
6995432 Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions Feb. 7, 2006
6972466 Bipolar transistors with low base resistance for CMOS integrated circuits Dec. 6, 2005
6936898 Diagonal deep well region for routing body-bias voltage for MOSFETS in surface well regions Aug. 30, 2005
6927442 Charge pump device Aug. 9, 2005
6917077 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode Jul. 12, 2005
6881997 Charge pump device Apr. 19, 2005
6879023 Seal ring for integrated circuits Apr. 12, 2005
6864525 Charge pump device Mar. 8, 2005

1 2 3 4










 
 
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