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Browse by Category: Main > Physics
Class Information
Number: 257/372
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > With means to prevent latchup or parasitic conduction channels
Description: Subject matter including means to prevent conduction between regions of complementary IGFETs which form a (parasitic) regenerative structure which remains ON in the absence of a triggering signal.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8685800 Single event latch-up prevention techniques for a semiconductor device Apr. 1, 2014
8686470 ESD protection circuit Apr. 1, 2014
8669620 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8643101 High voltage metal oxide semiconductor device having a multi-segment isolation structure Feb. 4, 2014
8633547 Structure for spanning gap in body-bias voltage routing structure Jan. 21, 2014
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8558312 Semiconductor integrated circuit device having impurities introduced in back gate semiconductor regions Oct. 15, 2013
8554279 Circuit for driving light-emitting element, and cellular phone Oct. 8, 2013
8530930 Semiconductor device having plural insulated gate switching cells and method for designing the same Sep. 10, 2013
8530975 Semiconductor device with gate edge protrusion Sep. 10, 2013
8513743 Field effect transistor with channel region having portions with different band structures for suppressed corner leakage Aug. 20, 2013
8461644 Latch-up free vertical TVS diode array structure using trench isolation Jun. 11, 2013
8450808 HVMOS devices and methods for forming the same May. 28, 2013
8445983 Semiconductor device for performing photoelectric conversion May. 21, 2013
8420518 Structure and method of latchup robustness with placement of through wafer via within CMOS circuitry Apr. 16, 2013
8395223 Coaxial transistor structure Mar. 12, 2013
8390074 Structure and method for latchup improvement using through wafer via latchup guard ring Mar. 5, 2013
8350343 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage Jan. 8, 2013
8278719 Radiation hardened isolation structures and fabrication methods Oct. 2, 2012
8237223 Semiconductor device Aug. 7, 2012
8198688 Semiconductor integrated circuit device with MOSFET limiter circuit Jun. 12, 2012
8188871 Drive current adjustment for transistors by local gate engineering May. 29, 2012
8183644 Metal gate structure of a CMOS semiconductor device May. 22, 2012
8125037 Field effect transistor with channel region edge and center portions having different band structures for suppressed corner leakage Feb. 28, 2012
8119460 Semiconductor device and method of forming the same Feb. 21, 2012
8116050 Semiconductor integrated circuit Feb. 14, 2012
8106458 SOI CMOS circuits with substrate bias Jan. 31, 2012
8084844 Semiconductor device Dec. 27, 2011
8072032 Semiconductor integrated circuit device having latchup preventing function Dec. 6, 2011
8053848 Semiconductor device and method of forming the same Nov. 8, 2011
8049283 Semiconductor device with deep trench structure Nov. 1, 2011
8022492 Semiconductor device for performing photoelectric conversion Sep. 20, 2011
8022480 Semiconductor device and method for manufacturing the same Sep. 20, 2011
7977753 High voltage BICMOS device and method for manufacturing the same Jul. 12, 2011
7968921 Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Jun. 28, 2011
7911003 Semiconductor integrated circuit device Mar. 22, 2011
7906383 Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device Mar. 15, 2011
7880240 Semiconductor device Feb. 1, 2011
7880223 Latch-up free vertical TVS diode array structure using trench isolation Feb. 1, 2011
7855420 Structure for a latchup robust array I/O using through wafer via Dec. 21, 2010
7812402 Semiconductor device Oct. 12, 2010
7812409 Trench MOSFET with cell layout, ruggedness, truncated corners Oct. 12, 2010
7804138 Buried guard ring and radiation hardened isolation structures and fabrication methods Sep. 28, 2010
7800183 Semiconductor device Sep. 21, 2010
7795675 Termination for trench MIS device Sep. 14, 2010
7786504 Bidirectional PNPN silicon-controlled rectifier Aug. 31, 2010
7741681 Latchup robust array I/O using through wafer via Jun. 22, 2010
7732286 Buried biasing wells in FETs (Field Effect Transistors) Jun. 8, 2010
7727848 Methods and semiconductor structures for latch-up suppression using a conductive region Jun. 1, 2010
7727831 Semiconductor device Jun. 1, 2010

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