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Class Information
Number: 257/371
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors > Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells
Description: Subject matter wherein the complementary IGFETs are located in wells of semiconductor material with electrical conductivity opposite to that of the respective transistors and wherein the wells contain a higher concentration of dopant ions than the semiconductor substrate in which they are located (e.g., twin wells).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4764482 |
Method of fabricating an integrated circuit containing bipolar and MOS transistors |
Aug. 16, 1988 |
| 4762802 |
Method for preventing latchup in CMOS devices |
Aug. 9, 1988 |
| 4746219 |
Local interconnect |
May. 24, 1988 |
| 4728619 |
Field implant process for CMOS using germanium |
Mar. 1, 1988 |
| 4724221 |
High-speed, low-power-dissipation integrated circuits |
Feb. 9, 1988 |
| 4716451 |
Semiconductor device with internal gettering region |
Dec. 29, 1987 |
| 4697332 |
Method of making tri-well CMOS by self-aligned process |
Oct. 6, 1987 |
| 4696092 |
Method of making field-plate isolated CMOS devices |
Sep. 29, 1987 |
| 4695865 |
Integrated logic circuit having insulated gate field effect transistors |
Sep. 22, 1987 |
| 4673965 |
Uses for buried contacts in integrated circuits |
Jun. 16, 1987 |
| 4672416 |
Semiconductor device |
Jun. 9, 1987 |
| 4661202 |
Method of manufacturing semiconductor device |
Apr. 28, 1987 |
| 4604790 |
Method of fabricating integrated circuit structure having CMOS and bipolar devices |
Aug. 12, 1986 |
| 4599789 |
Process of making twin well VLSI CMOS |
Jul. 15, 1986 |
| 4584027 |
Twin well single mask CMOS process |
Apr. 22, 1986 |
| 4578859 |
Implant mask reversal process |
Apr. 1, 1986 |
| 4577390 |
Fabrication of polysilicon to polysilicon capacitors with a composite dielectric layer |
Mar. 25, 1986 |
| 4558508 |
Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step |
Dec. 17, 1985 |
| 4554726 |
CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well |
Nov. 26, 1985 |
| 4553315 |
N Contact compensation technique |
Nov. 19, 1985 |
| 4549340 |
Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby |
Oct. 29, 1985 |
| 4535529 |
Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types |
Aug. 20, 1985 |
| 4525920 |
Method of making CMOS circuits by twin tub process and multiple implantations |
Jul. 2, 1985 |
| 4516316 |
Method of making improved twin wells for CMOS devices by controlling spatial separation |
May. 14, 1985 |
| 4507847 |
Method of making CMOS by twin-tub process integrated with a vertical bipolar transistor |
Apr. 2, 1985 |
| 4503451 |
Low resistance buried power bus for integrated circuits |
Mar. 5, 1985 |
| 4474624 |
Process for forming self-aligned complementary source/drain regions for MOS transistors |
Oct. 2, 1984 |
| 4470852 |
Method of making CMOS device and contacts therein by enhanced oxidation of selectively implanted regions |
Sep. 11, 1984 |
| 4468574 |
Dual gate CMOS transistor circuits having reduced electrode capacitance |
Aug. 28, 1984 |
| 4459741 |
Method for producing VLSI complementary MOS field effect transistor circuits |
Jul. 17, 1984 |
| 4442591 |
High-voltage CMOS process |
Apr. 17, 1984 |
| 4420344 |
CMOS Source/drain implant process without compensation of polysilicon doping |
Dec. 13, 1983 |
| 4063274 |
Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
Dec. 13, 1977 |
| 4032372 |
Epitaxial outdiffusion technique for integrated bipolar and field effect transistors |
Jun. 28, 1977 |
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