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Class Information
Number: 257/37
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Tunneling through region of reduced conductivity > At least one electrode layer of semiconductor material
Description: Subject matter wherein the tunneling device has at least one electrode layer comprised of a semiconductive material.

Sub-classes under this class:

Class Number Class Name Patents
257/38 Three or more electrode device 71

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8710652 Embedded package and method for manufacturing the same Apr. 29, 2014
8546924 Package structures for integrating thermoelectric components with stacking chips Oct. 1, 2013
8344353 Light emitting diode having a transparent substrate Jan. 1, 2013
8278650 Organic semiconductor, photoelectric conversion element and image device Oct. 2, 2012
8274096 Semiconductor device and method Sep. 25, 2012
8263480 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires Sep. 11, 2012
8242717 Light output device Aug. 14, 2012
8173992 Transistor or triode structure with tunneling effect and insulating nanochannel May. 8, 2012
RE42422 Light emitting diode having a transparent substrate Jun. 7, 2011
7807508 Wafer-level fabrication of lidded chips with electrodeposited dielectric coating Oct. 5, 2010
7745323 Metal interconnection of a semiconductor device and method of fabricating the same Jun. 29, 2010
7738280 Resistive nonvolatile memory element, and production method of the same Jun. 15, 2010
7696097 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and nanodevices comprising the nanowires Apr. 13, 2010
7598514 Quasi-particle interferometry for logical gates Oct. 6, 2009
7550757 Semiconductor laser and method for manufacturing semiconductor laser Jun. 23, 2009
7534710 Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same May. 19, 2009
7449713 Semiconductor memory device Nov. 11, 2008
7405421 Optical integrated device Jul. 29, 2008
7259406 Semiconductor optical element Aug. 21, 2007
7250648 Ferroelectric rare-earth manganese-titanium oxides Jul. 31, 2007
7167387 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory Jan. 23, 2007
7157731 Semiconductor device and its manufacture Jan. 2, 2007
7078855 Dielectric light device Jul. 18, 2006
6914256 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein Jul. 5, 2005
6888156 Thin film device May. 3, 2005
6882100 Dielectric light device Apr. 19, 2005
6878958 Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector Apr. 12, 2005
6844571 III-nitride light-emitting device with increased light generating capability Jan. 18, 2005
6833556 Insulated gate field effect transistor having passivated schottky barriers to the channel Dec. 21, 2004
6750477 Static induction transistor Jun. 15, 2004
6710382 Semiconductor device and method for fabricating the same Mar. 23, 2004
6670652 Monolithically integrated E/D mode HEMT and method for fabricating the same Dec. 30, 2003
6525379 Memory device, method of manufacturing the same, and integrated circuit Feb. 25, 2003
6518673 Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits Feb. 11, 2003
6479863 Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell Nov. 12, 2002
6337293 Method of forming a quantum memory element having a film of amorphous silicon Jan. 8, 2002
6087711 Integrated circuit metallization with superconductor BEOL wiring Jul. 11, 2000
6037606 Construction of and method of manufacturing an MIM or MIS electron source Mar. 14, 2000
6023124 Electron emission device and display device using the same Feb. 8, 2000
6015978 Resonance tunnel device Jan. 18, 2000
5962864 Gated resonant tunneling device and fabricating method thereof Oct. 5, 1999
5956568 Methods of fabricating and contacting ultra-small semiconductor devices Sep. 21, 1999
5844279 Single-electron semiconductor device Dec. 1, 1998
5760463 Superconducting layer in contact with group III-V semiconductor layer for wiring structure Jun. 2, 1998
5751012 Polysilicon pillar diode for use in a non-volatile memory cell May. 12, 1998
5665978 Nonlinear element and bistable memory device Sep. 9, 1997
5659179 Ultra-small semiconductor devices having patterned edge planar surfaces Aug. 19, 1997
5644146 Thin film transistor Jul. 1, 1997
5621223 Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same Apr. 15, 1997
5510628 Deep ultraviolet photolithographically defined ultra-thin films for selective cell adhesion and outgrowth and method of manufacturing the same and devices containing the same Apr. 23, 1996

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