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Class Information
Number: 257/369
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors
Description: Subject matter wherein the device is made up of IGFETs that have opposite conductivity channels (p-type and n-type).


Sub-classes under this class:

Class Number Class Name Patents
257/370 Combined with bipolar transistor 579
257/371 Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells 624
257/372 With means to prevent latchup or parasitic conduction channels 369
257/373 With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action 145
257/377 With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide) 315


Patents under this class:

Patent Number Title Of Patent Date Issued
7619285 Method of fabricating CMOS transistor and CMOS transistor fabricated thereby Nov. 17, 2009
7615831 Structure and method for fabricating self-aligned metal contacts Nov. 10, 2009
7615433 Double anneal with improved reliability for dual contact etch stop liner scheme Nov. 10, 2009
7612414 Overlapped stressed liners for improved contacts Nov. 3, 2009
7612413 Semiconductor device and manufacturing method thereof Nov. 3, 2009
7608912 Technique for creating different mechanical strain in different CPU regions by forming an etch stop layer having differently modified intrinsic stress Oct. 27, 2009
7608897 Sub-surface region with diagonal gap regions Oct. 27, 2009
7608896 Semiconductor device Oct. 27, 2009
7608891 Thin film transistor, circuit apparatus and liquid crystal display Oct. 27, 2009
7608873 Buried-gated photodiode device and method for configuring and operating same Oct. 27, 2009
7608499 Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same Oct. 27, 2009
7605414 MOS transistors having low-resistance salicide gates and a self-aligned contact between them Oct. 20, 2009
7602031 Method of fabricating semiconductor device, and semiconductor device Oct. 13, 2009
7598573 Systems and methods for voltage distribution via multiple epitaxial layers Oct. 6, 2009
7598540 High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same Oct. 6, 2009
7592674 Semiconductor device with silicide-containing gate electrode and method of fabricating the same Sep. 22, 2009
7589386 Semiconductor device and manufacturing method thereof Sep. 15, 2009
7589385 Semiconductor CMOS transistors and method of manufacturing the same Sep. 15, 2009
7586160 Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit Sep. 8, 2009
7586159 Semiconductor devices having different gate dielectrics and methods for manufacturing the same Sep. 8, 2009
7586158 Piezoelectric stress liner for bulk and SOI Sep. 8, 2009
7582927 Flash EEPROM cell and method of fabricating the same Sep. 1, 2009
7579660 Semiconductor device and manufacturing method thereof Aug. 25, 2009
7579655 Transistor structure having interconnect to side of diffusion and related method Aug. 25, 2009
7577040 Dual port memory device with reduced coupling effect Aug. 18, 2009
7576397 Semiconductor device Aug. 18, 2009
7575975 Method for forming a planar and vertical semiconductor structure having a strained semiconductor layer Aug. 18, 2009
7569893 Method of fabricating semiconductor device and semiconductor device fabricated thereby Aug. 4, 2009
7569892 Method and structure for forming self-aligned, dual stress liner for CMOS devices Aug. 4, 2009
7569891 Semiconductor device with reduced contact resistance and method for manufacturing the same Aug. 4, 2009
7569890 Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device Aug. 4, 2009
7569889 Memory integrated circuit, in particular an SRAM memory integrated circuit, and corresponding fabrication process Aug. 4, 2009
7569888 Semiconductor device with close stress liner film and method of manufacturing the same Aug. 4, 2009
7569466 Dual metal gate self-aligned integration Aug. 4, 2009
7566936 Complementary MIS device Jul. 28, 2009
7564102 Semiconductor device and its manufacturing method Jul. 21, 2009
7564073 CMOS and HCMOS semiconductor integrated circuit Jul. 21, 2009
7560781 Semiconductor device and fabrication method thereof Jul. 14, 2009
7560780 Active region spacer for semiconductor devices and method to form the same Jul. 14, 2009
7560779 Method for forming a mixed voltage circuit having complementary devices Jul. 14, 2009
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7547947 SRAM cell Jun. 16, 2009
7545005 Semiconductor device capable of avoiding latchup breakdown resulting from negative variation of floating offset voltage Jun. 9, 2009
7545004 Method and structure for forming strained devices Jun. 9, 2009
7545002 Low noise and high performance LSI device, layout and manufacturing method Jun. 9, 2009
7544555 Method of manufacturing semiconductor device Jun. 9, 2009
7541650 Gate electrode structures Jun. 2, 2009
7535064 Semiconductor device having a fin and method of manufacturing the same May. 19, 2009
7534676 Method of forming enhanced device via transverse stress May. 19, 2009
7531881 Semiconductor devices having transistors with different gate structures and methods of fabricating the same May. 12, 2009



 
 
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