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Class Information
Number: 257/369
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit > Complementary insulated gate field effect transistors
Description: Subject matter wherein the device is made up of IGFETs that have opposite conductivity channels (p-type and n-type).










Sub-classes under this class:

Class Number Class Name Patents
257/370 Combined with bipolar transistor 663
257/371 Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells 796
257/372 With means to prevent latchup or parasitic conduction channels 426
257/373 With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action 166
257/377 With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide) 389


Patents under this class:

Patent Number Title Of Patent Date Issued
8710592 SRAM cells using shared gate electrode configuration Apr. 29, 2014
8710583 Dual work function recessed access device and methods of forming Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8709887 Method for fabricating a nitrided silicon-oxide gate dielectric Apr. 29, 2014
8704311 Semiconductor device having epitaxial semiconductor layer above impurity layer Apr. 22, 2014
8703569 MOS transistor, manufacturing method thereof, and semiconductor device Apr. 22, 2014
8703556 Method of making a FinFET device Apr. 22, 2014
8692333 Semiconductor device for word line driver with efficient routing of conductor for decreased gate resistance Apr. 8, 2014
8692332 Strained-silicon transistor and method of making the same Apr. 8, 2014
8686506 High performance devices and high density devices on single chip Apr. 1, 2014
8685814 Transistor device and method of manufacture thereof Apr. 1, 2014
8685812 Logic switch and circuits utilizing the switch Apr. 1, 2014
8685808 Semiconductor device fabrication method Apr. 1, 2014
8680629 Control of flatband voltages and threshold voltages in high-k metal gate stacks and structures for CMOS devices Mar. 25, 2014
8679894 Low temperature deposition of phase change memory materials Mar. 25, 2014
8674453 Mechanisms for forming stressor regions in a semiconductor device Mar. 18, 2014
8674452 Semiconductor device with lower metal layer thickness in PMOS region Mar. 18, 2014
8674451 N/P metal crystal orientation for high-K metal gate Vt modulation Mar. 18, 2014
8673758 Structure of metal gate and fabrication method thereof Mar. 18, 2014
8673755 Semiconductor device having metal gate and manufacturing method thereof Mar. 18, 2014
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device Mar. 18, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8669620 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8669619 Semiconductor structure with multi-layer contact etch stop layer structure Mar. 11, 2014
8669154 Transistor device and method of manufacture thereof Mar. 11, 2014
8669151 High-K metal gate electrode structures formed at different process stages of a semiconductor device Mar. 11, 2014
8669147 Methods of forming high mobility fin channels on three dimensional semiconductor devices Mar. 11, 2014
8664658 Semiconductor device Mar. 4, 2014
8664104 Method of producing a device with transistors strained by means of an external layer Mar. 4, 2014
8664103 Metal gate stack formation for replacement gate technology Mar. 4, 2014
8664054 Method for forming semiconductor structure Mar. 4, 2014
8659093 Continuous metal semiconductor alloy via for interconnects Feb. 25, 2014
8659092 Complementary metal oxide semiconductor transistor and fabricating method thereof Feb. 25, 2014
8658489 Method for dual work function metal gate CMOS with selective capping Feb. 25, 2014
8658483 Method of fabricating an integrated circuit device having backside bevel protection Feb. 25, 2014
8653630 Layout for multiple-Fin SRAM cell Feb. 18, 2014
8653605 Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum Feb. 18, 2014
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8653603 Semiconductor devices with peripheral region insertion patterns Feb. 18, 2014
8653602 Transistor having replacement metal gate and process for fabricating the same Feb. 18, 2014
8653595 Semiconductor device and method of manufacturing the same Feb. 18, 2014
8652929 CMOS device for reducing charge sharing effect and fabrication method thereof Feb. 18, 2014
8648392 Semiconductor integrated circuit Feb. 11, 2014
8644759 Offset cancellation for DC isolated nodes Feb. 4, 2014
8643116 Semiconductor device Feb. 4, 2014
8643115 Structure and method of T.sub.inv scaling for high .kappa. metal gate technology Feb. 4, 2014
8643114 Semiconductor device and electronic apparatus Feb. 4, 2014
8643113 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8637925 Nickel-silicide formation with differential Pt composition Jan. 28, 2014











 
 
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