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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
838 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,493 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6707113 |
Semiconductor device with crenellated channel |
Mar. 16, 2004 |
| 6700169 |
Semiconductor memory device |
Mar. 2, 2004 |
| 6693327 |
Lateral semiconductor component in thin-film SOI technology |
Feb. 17, 2004 |
| 6690051 |
FLASH memory circuitry |
Feb. 10, 2004 |
| 6690070 |
Insulated gate semiconductor device and its manufacturing method |
Feb. 10, 2004 |
| 6690073 |
Semiconductor integrated circuit making use of standard cells |
Feb. 10, 2004 |
| 6690115 |
Electro-luminescence panel |
Feb. 10, 2004 |
| 6686059 |
Semiconductor device manufacturing method and semiconductor device |
Feb. 3, 2004 |
| 6683352 |
Semiconductor device structure |
Jan. 27, 2004 |
| 6683362 |
Metal-semiconductor diode clamped complementary field effect transistor integrated circuits |
Jan. 27, 2004 |
| 6680486 |
Insulated gate field effect transistor and its manufacturing method |
Jan. 20, 2004 |
| 6680514 |
Contact capping local interconnect |
Jan. 20, 2004 |
| 6677633 |
Semiconductor device |
Jan. 13, 2004 |
| 6677647 |
Electromigration characteristics of patterned metal features in semiconductor devices |
Jan. 13, 2004 |
| 6664160 |
Gate structure with high K dielectric |
Dec. 16, 2003 |
| 6661063 |
Semiconductor integrated circuit device |
Dec. 9, 2003 |
| 6661076 |
Semiconductor device |
Dec. 9, 2003 |
| 6657885 |
Static semiconductor memory device |
Dec. 2, 2003 |
| 6657257 |
Insulated gate field effect transistor and semiconductor integrated circuit |
Dec. 2, 2003 |
| 6649984 |
Logic-merged memory |
Nov. 18, 2003 |
| 6646307 |
MOSFET having a double gate |
Nov. 11, 2003 |
| 6646310 |
Four transistor static-random-access-memory cell |
Nov. 11, 2003 |
| 6642581 |
Semiconductor device comprising buried channel region |
Nov. 4, 2003 |
| 6642584 |
Dual work function semiconductor structure with borderless contact and method of fabricating the same |
Nov. 4, 2003 |
| 6642560 |
MOSFET with a thin gate insulating film |
Nov. 4, 2003 |
| 6635933 |
Structure of a capacitor section of a dynamic random-access memory |
Oct. 21, 2003 |
| 6627528 |
Semiconductor device and its manufacturing process |
Sep. 30, 2003 |
| 6624475 |
SOI low capacitance body contact |
Sep. 23, 2003 |
| 6624455 |
Semiconductor device and method of manufacturing the same including drain pinned along channel width |
Sep. 23, 2003 |
| 6624495 |
Adjustable threshold isolation transistor |
Sep. 23, 2003 |
| 6624478 |
High mobility transistors in SOI and method for forming |
Sep. 23, 2003 |
| 6621127 |
Semiconductor memory device with miniaturization improvement |
Sep. 16, 2003 |
| 6617656 |
EDMOS device having a lattice type drift region |
Sep. 9, 2003 |
| 6617681 |
Interposer and method of making same |
Sep. 9, 2003 |
| 6617662 |
Semiconductor device having a trench isolation structure |
Sep. 9, 2003 |
| 6605846 |
Shallow junction formation |
Aug. 12, 2003 |
| 6605844 |
Semiconductor device |
Aug. 12, 2003 |
| 6605845 |
Asymmetric MOSFET using spacer gate technique |
Aug. 12, 2003 |
| 6605837 |
Memory cell configuration and production method |
Aug. 12, 2003 |
| 6603179 |
Semiconductor apparatus including CMOS circuits and method for fabricating the same |
Aug. 5, 2003 |
| 6600180 |
Semiconductor device, method of manufacturing the same and exposure mask for implantation |
Jul. 29, 2003 |
| 6600210 |
Semiconductor device and method of manufacturing the same |
Jul. 29, 2003 |
| 6597040 |
Semiconductor device having MOS transistor for coupling two signal lines |
Jul. 22, 2003 |
| 6590260 |
Memory device having improved programmability |
Jul. 8, 2003 |
| 6590231 |
Transistor that uses carbon nanotube ring |
Jul. 8, 2003 |
| 6586781 |
Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
Jul. 1, 2003 |
| 6580108 |
Insulated gate bipolar transistor decreasing the gate resistance |
Jun. 17, 2003 |
| 6576948 |
Integrated circuit configuration and method for manufacturing it |
Jun. 10, 2003 |
| 6576958 |
ESD protection networks with NMOS-bound or PMOS-bound diode structures in a shallow-trench-isolation (STI) CMOS process |
Jun. 10, 2003 |
| 6573577 |
Semiconductor device and method for fabricating the same |
Jun. 3, 2003 |
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