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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
840 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,494 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7482615 |
High performance MOSFET comprising stressed phase change material |
Jan. 27, 2009 |
| 7479683 |
Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high-k dielectrics |
Jan. 20, 2009 |
| 7476934 |
Structure for an LDMOS transistor and fabrication method thereof |
Jan. 13, 2009 |
| 7476942 |
SOI lateral semiconductor device and method of manufacturing the same |
Jan. 13, 2009 |
| 7473943 |
Gate configuration for nanowire electronic devices |
Jan. 6, 2009 |
| 7459752 |
Ultra thin body fully-depleted SOI MOSFETs |
Dec. 2, 2008 |
| 7453094 |
Light-emitting apparatus and fabrication method of the same |
Nov. 18, 2008 |
| 7446417 |
Semiconductor integrated circuit device and fabrication method thereof |
Nov. 4, 2008 |
| 7442995 |
Semiconductor device and method of manufacturing the same |
Oct. 28, 2008 |
| 7436028 |
One-time programmable read only memory and operating method thereof |
Oct. 14, 2008 |
| 7436031 |
Device for implementing an inverter having a reduced size |
Oct. 14, 2008 |
| 7436046 |
Semiconductor device and manufacturing method of the same |
Oct. 14, 2008 |
| 7432558 |
Formation of semiconductor devices to achieve <100> channel orientation |
Oct. 7, 2008 |
| 7432569 |
FET gate structure and fabrication process |
Oct. 7, 2008 |
| 7432557 |
FinFET device with multiple channels |
Oct. 7, 2008 |
| 7427544 |
Semiconductor device and method of manufacturing the same |
Sep. 23, 2008 |
| 7425745 |
Semiconductor device and method for manufacturing the same |
Sep. 16, 2008 |
| 7425746 |
Semiconductor storage device and semiconductor integrated circuit |
Sep. 16, 2008 |
| 7423325 |
Lateral field-effect-controllable semiconductor component for RF applications |
Sep. 9, 2008 |
| 7423330 |
Semiconductor device with strain |
Sep. 9, 2008 |
| 7417271 |
Electrode structure having at least two oxide layers and non-volatile memory device having the same |
Aug. 26, 2008 |
| 7414291 |
Semiconductor device and method of manufacturing the same |
Aug. 19, 2008 |
| 7411209 |
Field-effect transistor and method for manufacturing the same |
Aug. 12, 2008 |
| 7405458 |
Asymmetric field transistors (FETs) |
Jul. 29, 2008 |
| 7402870 |
Ultra shallow junction formation by epitaxial interface limited diffusion |
Jul. 22, 2008 |
| 7402875 |
Lateral undercut of metal gate in SOI device |
Jul. 22, 2008 |
| 7400031 |
Asymmetrically stressed CMOS FinFET |
Jul. 15, 2008 |
| 7397093 |
Semiconductor devices with sidewall conductive patterns methods of fabricating the same |
Jul. 8, 2008 |
| 7394135 |
Dual source MOSFET for low inductance synchronous rectifier |
Jul. 1, 2008 |
| 7391063 |
Display device |
Jun. 24, 2008 |
| 7391088 |
Integrated circuit with multi-length output transistor segments |
Jun. 24, 2008 |
| 7387919 |
Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter |
Jun. 17, 2008 |
| 7385262 |
Band-structure modulation of nano-structures in an electric field |
Jun. 10, 2008 |
| 7385255 |
Field effect transistor and application device thereof |
Jun. 10, 2008 |
| 7382026 |
Semiconductor memory device and method of manufacturing the same |
Jun. 3, 2008 |
| 7372088 |
Vertical gate semiconductor device and method for fabricating the same |
May. 13, 2008 |
| 7368757 |
Compound semiconductor and compound semiconductor device using the same |
May. 6, 2008 |
| 7365398 |
Compact SRAMs and other multiple transistor structures |
Apr. 29, 2008 |
| 7365432 |
Memory cell structure |
Apr. 29, 2008 |
| 7365399 |
Structure and method to form semiconductor-on-pores (SOP) for high device performance and low manufacturing cost |
Apr. 29, 2008 |
| 7361613 |
Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method |
Apr. 22, 2008 |
| 7358547 |
Selective deposition to improve selectivity and structures formed thereby |
Apr. 15, 2008 |
| 7355253 |
Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates |
Apr. 8, 2008 |
| 7355252 |
Electrostatic discharge protection device and method of fabricating the same |
Apr. 8, 2008 |
| 7355218 |
Semiconductor component with a MOS transistor |
Apr. 8, 2008 |
| 7348632 |
NMOS device formed on SOI substrate and method of fabricating the same |
Mar. 25, 2008 |
| 7348634 |
Shallow trench isolation formation |
Mar. 25, 2008 |
| 7345346 |
Field effect transistor having contact plugs in the source region greater than in the drain region |
Mar. 18, 2008 |
| 7339215 |
Transistor device containing carbon doped silicon in a recess next to MDD to create strain in channel |
Mar. 4, 2008 |
| 7339222 |
Method for determining wordline critical dimension in a memory array and related structure |
Mar. 4, 2008 |
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