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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
838 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,493 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4364778 |
Formation of multilayer dopant distributions in a semiconductor |
Dec. 21, 1982 |
| 4356040 |
Semiconductor device having improved interlevel conductor insulation |
Oct. 26, 1982 |
| 4320312 |
Smaller memory cells and logic circuits |
Mar. 16, 1982 |
| 4309224 |
Method for manufacturing a semiconductor device |
Jan. 5, 1982 |
| 4306246 |
Method for trimming active semiconductor devices |
Dec. 15, 1981 |
| 4277881 |
Process for fabrication of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
Jul. 14, 1981 |
| 4278989 |
Semiconductor device having cross wires |
Jul. 14, 1981 |
| 4264409 |
Contamination-free selective reactive ion etching or polycrystalline silicon against silicon dioxide |
Apr. 28, 1981 |
| 4152716 |
Voltage dividing circuit in IC structure |
May. 1, 1979 |
| 4127931 |
Semiconductor device |
Dec. 5, 1978 |
| 4116719 |
Method of making semiconductor device with PN junction in stacking-fault free zone |
Sep. 26, 1978 |
| 4084987 |
Method for manufacturing electrical solid state devices utilizing shadow masking and ion-implantation |
Apr. 18, 1978 |
| 4080721 |
Fabrication of semiconductor device |
Mar. 28, 1978 |
| 4016007 |
Method for fabricating a silicon device utilizing ion-implantation and selective oxidation |
Apr. 5, 1977 |
| 4015143 |
Semiconductor switch |
Mar. 29, 1977 |
| 4004950 |
Method for improving the doping of a semiconductor material |
Jan. 25, 1977 |
| T954006 |
On-chip substrate voltage generator |
Jan. 4, 1977 |
| 3997367 |
Method for making transistors |
Dec. 14, 1976 |
| 3967364 |
Method of manufacturing semiconductor devices |
Jul. 6, 1976 |
| 3966501 |
Process of producing semiconductor devices |
Jun. 29, 1976 |
| 3956025 |
Semiconductor devices having surface state control and method of manufacture |
May. 11, 1976 |
| 3953255 |
Fabrication of matched complementary transistors in integrated circuits |
Apr. 27, 1976 |
| 3930305 |
Method for manufacturing integrated circuits |
Jan. 6, 1976 |
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