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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
838 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,493 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5122473 |
Process for forming a field isolation structure and gate structures in integrated MISFET devices |
Jun. 16, 1992 |
| 5101257 |
Semiconductor device having merged bipolar and MOS transistors and process for making the same |
Mar. 31, 1992 |
| 5101262 |
Semiconductor memory device and method of manufacturing it |
Mar. 31, 1992 |
| 5101258 |
Semiconductor integrated circuit device of master slice approach |
Mar. 31, 1992 |
| 5094900 |
Self-aligned sloped contact |
Mar. 10, 1992 |
| 5072266 |
Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry |
Dec. 10, 1991 |
| 5043859 |
Half bridge device package, packaged devices and circuits |
Aug. 27, 1991 |
| 4994886 |
Composite MOS transistor and application to a free-wheel diode |
Feb. 19, 1991 |
| 4979149 |
Non-volatile memory device including a micro-mechanical storage element |
Dec. 18, 1990 |
| 4958204 |
Junction field-effect transistor with a novel gate |
Sep. 18, 1990 |
| 4951111 |
Integrated circuit device |
Aug. 21, 1990 |
| 4947226 |
Bilateral switching device |
Aug. 7, 1990 |
| 4939566 |
Semiconductor switch with parallel DMOS and IGT |
Jul. 3, 1990 |
| 4937700 |
Semiconductor integrated circuit with a circuit limiting an input voltage to a predetermined voltage |
Jun. 26, 1990 |
| 4924111 |
Microprocessor layout minimizing temperature and current effects |
May. 8, 1990 |
| 4922403 |
Voltage multiplier circuit with reduced back-gate bias effect |
May. 1, 1990 |
| 4879582 |
Field-effect transistor |
Nov. 7, 1989 |
| 4872141 |
Radiation hard memory cell having monocrystalline and non-monocrystalline inverters |
Oct. 3, 1989 |
| 4830971 |
Method for manufacturing a semiconductor device utilizing self-aligned contact regions |
May. 16, 1989 |
| 4808861 |
Integrated circuit to reduce switching noise |
Feb. 28, 1989 |
| 4764799 |
Stud-defined integrated circuit structure |
Aug. 16, 1988 |
| 4757202 |
Solid state dosimeter |
Jul. 12, 1988 |
| 4671852 |
Method of forming suspended gate, chemically sensitive field-effect transistor |
Jun. 9, 1987 |
| 4669062 |
Two-tiered dynamic random access memory (DRAM) cell |
May. 26, 1987 |
| 4645563 |
Method of manufacturing GaAs field effect transistor |
Feb. 24, 1987 |
| 4608696 |
Integrated laser and field effect transistor |
Aug. 26, 1986 |
| 4592130 |
Method of fabricating a CCD read only memory utilizing dual-level junction formation |
Jun. 3, 1986 |
| 4546401 |
Two-pole overcurrent protection device |
Oct. 8, 1985 |
| 4525811 |
Semiconductor memory and method of producing the same |
Jun. 25, 1985 |
| 4517729 |
Method for fabricating MOS device with self-aligned contacts |
May. 21, 1985 |
| 4514251 |
Method of manufacturing a semiconductor device, in which patterns are formed in a layer of silicon nitride by means of ion implantation |
Apr. 30, 1985 |
| 4505024 |
Method of manufacturing semiconductor device, including a step of patterning a conductor layer |
Mar. 19, 1985 |
| 4502938 |
Encapsulated chemoresponsive microelectronic device arrays |
Mar. 5, 1985 |
| 4499557 |
Programmable cell for use in programmable electronic arrays |
Feb. 12, 1985 |
| 4486943 |
Zero drain overlap and self aligned contact method for MOS devices |
Dec. 11, 1984 |
| 4468855 |
Method of making aluminum gate self-aligned FET by selective beam annealing through reflective and antireflective coatings |
Sep. 4, 1984 |
| 4466172 |
Method for fabricating MOS device with self-aligned contacts |
Aug. 21, 1984 |
| 4463492 |
Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state |
Aug. 7, 1984 |
| 4461072 |
Method for preparing an insulated gate field effect transistor |
Jul. 24, 1984 |
| 4449285 |
Method for producing a vertical channel transistor |
May. 22, 1984 |
| 4446476 |
Integrated circuit having a sublayer electrical contact and fabrication thereof |
May. 1, 1984 |
| 4445967 |
Method for manufacturing semiconductor device |
May. 1, 1984 |
| 4445270 |
Low resistance contact for high density integrated circuit |
May. 1, 1984 |
| 4430583 |
Apparatus for increasing the speed of a circuit having a string of IGFETs |
Feb. 7, 1984 |
| 4404735 |
Method for manufacturing a field isolation structure for a semiconductor device |
Sep. 20, 1983 |
| 4394181 |
Methods of manufacturing a semiconductor device having a channel region spaced inside channel stoppers |
Jul. 19, 1983 |
| 4393574 |
Method for fabricating integrated circuits |
Jul. 19, 1983 |
| 4378506 |
MIS Device including a substrate bias generating circuit |
Mar. 29, 1983 |
| 4377902 |
Method of manufacturing semiconductor device using laser beam crystallized poly/amorphous layer |
Mar. 29, 1983 |
| 4371403 |
Method of providing gettering sites through electrode windows |
Feb. 1, 1983 |
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