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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
838 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,493 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5376813 |
Adaptive photoreceptor including adaptive element for long-time-constant continuous adaptation with low offset and insensitivity to light |
Dec. 27, 1994 |
| 5374840 |
Semiconductor device with isolated transistors |
Dec. 20, 1994 |
| 5373476 |
Highly integrated semiconductor memory device with triple well structure |
Dec. 13, 1994 |
| 5355012 |
Semiconductor device |
Oct. 11, 1994 |
| 5341013 |
Semiconductor device provided with sense circuits |
Aug. 23, 1994 |
| 5336914 |
Static semiconductor memory device |
Aug. 9, 1994 |
| 5331192 |
Semiconductor device |
Jul. 19, 1994 |
| 5324960 |
Dual-transistor structure and method of formation |
Jun. 28, 1994 |
| 5315136 |
Double-balanced mixer |
May. 24, 1994 |
| 5315132 |
Insulated gate field effect transistor |
May. 24, 1994 |
| 5311048 |
Semiconductor integrated circuit device |
May. 10, 1994 |
| 5300790 |
Semiconductor device |
Apr. 5, 1994 |
| 5294814 |
Vertical diamond field effect transistor |
Mar. 15, 1994 |
| 5294822 |
Polycide local interconnect method and structure |
Mar. 15, 1994 |
| 5289422 |
Semiconductor device having dummy wiring pattern therein and manufacturing method thereof |
Feb. 22, 1994 |
| 5286998 |
Semiconductor device having two transistors forming a memory cell and a peripheral circuit, wherein the impurity region of the first transistor is not subjected to an etching atmosphere |
Feb. 15, 1994 |
| 5286985 |
Interface circuit operable to perform level shifting between a first type of device and a second type of device |
Feb. 15, 1994 |
| 5276346 |
Semiconductor integrated circuit device having protective/output elements and internal circuits |
Jan. 4, 1994 |
| 5270566 |
Insulated gate semiconductor device |
Dec. 14, 1993 |
| 5266826 |
Semiconductor integrated circuit |
Nov. 30, 1993 |
| 5267020 |
Gallium arsenide monolithically integrated sampling head using equivalent time sampling having a bandwidth greater than 100 ghz |
Nov. 30, 1993 |
| 5262663 |
DRAM cell having tunnel shaped structure and formation process thereof |
Nov. 16, 1993 |
| 5260594 |
Semiconductor device reducing internal noises and integrated circuit employing the same |
Nov. 9, 1993 |
| 5256898 |
Semiconductor device with a different epitaxial thickness between adjacent circuit regions |
Oct. 26, 1993 |
| 5257095 |
Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
Oct. 26, 1993 |
| 5256915 |
Compound semiconductor integrated circuit |
Oct. 26, 1993 |
| 5256582 |
Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate |
Oct. 26, 1993 |
| 5252849 |
Transistor useful for further vertical integration and method of formation |
Oct. 12, 1993 |
| 5243210 |
Semiconductor memory device and manufacturing method thereof |
Sep. 7, 1993 |
| 5243203 |
Compact transistor pair layout and method thereof |
Sep. 7, 1993 |
| 5241205 |
Semiconductor memory device |
Aug. 31, 1993 |
| 5241204 |
Semiconductor memory |
Aug. 31, 1993 |
| 5241193 |
Semiconductor device having a thin-film transistor and process |
Aug. 31, 1993 |
| 5227665 |
Semiconductor integrated circuit device |
Jul. 13, 1993 |
| 5220191 |
Semiconductor device having a well electrically insulated from the substrate |
Jun. 15, 1993 |
| 5202907 |
Solid-state image sensor output MOSFET amplifier with MOSFET load |
Apr. 13, 1993 |
| 5200638 |
A semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the same |
Apr. 6, 1993 |
| 5200637 |
MOS transistor and differential amplifier circuit with low offset |
Apr. 6, 1993 |
| 5177586 |
CMOS memory device with improved sense amplifier biasing |
Jan. 5, 1993 |
| 5177569 |
Semiconductor device having a two layered structure gate electrode |
Jan. 5, 1993 |
| 5173127 |
Semi-insulating INP single crystals, semiconductor devices having substrates of the crystals and processes for producing the same |
Dec. 22, 1992 |
| 5172209 |
Integral Bi-CMOS logic circuit |
Dec. 15, 1992 |
| 5170231 |
Silicon carbide field-effect transistor with improved breakdown voltage and low leakage current |
Dec. 8, 1992 |
| 5166771 |
Self-aligning contact and interconnect structure |
Nov. 24, 1992 |
| 5157474 |
Static memory |
Oct. 20, 1992 |
| 5146306 |
Semiconductor FET structures with slew-rate control |
Sep. 8, 1992 |
| 5144518 |
Semiconductor integrated circuit |
Sep. 1, 1992 |
| 5142344 |
Insulated gate field effect transistor and its manufacturing method |
Aug. 25, 1992 |
| 5132755 |
Field effect transistor |
Jul. 21, 1992 |
| 5122859 |
Iterative self-aligned contact metallization process |
Jun. 16, 1992 |
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