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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
838 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,493 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5682054 |
Rectifying transfer gate device |
Oct. 28, 1997 |
| 5679968 |
Transistor having reduced hot carrier implantation |
Oct. 21, 1997 |
| 5675533 |
Semiconductor device |
Oct. 7, 1997 |
| 5670803 |
Three-dimensional SRAM trench structure and fabrication method therefor |
Sep. 23, 1997 |
| 5663587 |
Field effect transistor of high breakdown voltage type having stable electrical characteristics |
Sep. 2, 1997 |
| 5663589 |
Current regulating semiconductor integrated circuit device and fabrication method of the same |
Sep. 2, 1997 |
| 5659191 |
DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof |
Aug. 19, 1997 |
| 5633524 |
Gate array semiconductor integrated circuit device |
May. 27, 1997 |
| 5629546 |
Static memory cell and method of manufacturing a static memory cell |
May. 13, 1997 |
| 5602790 |
Memory device with MOS transistors having bodies biased by temperature-compensated voltage |
Feb. 11, 1997 |
| 5602410 |
Off-state gate-oxide field reduction in CMOS |
Feb. 11, 1997 |
| 5600160 |
Multichannel field effect device |
Feb. 4, 1997 |
| 5598347 |
Layout method for designing an integrated circuit device by using standard cells |
Jan. 28, 1997 |
| 5594267 |
Semiconductor memory device having thin film transistor and method of producing the same |
Jan. 14, 1997 |
| 5592011 |
Single layer thin film transistor static random access memory cell |
Jan. 7, 1997 |
| 5592010 |
Semiconductor device |
Jan. 7, 1997 |
| 5583356 |
Connector arrangement for a semiconductor memory device |
Dec. 10, 1996 |
| 5581103 |
Semiconductor integrated circuit device with input-protecting circuit |
Dec. 3, 1996 |
| 5578860 |
Monolithic high frequency integrated circuit structure having a grounded source configuration |
Nov. 26, 1996 |
| 5565692 |
Insulated gate transistor electrostatic charge protection |
Oct. 15, 1996 |
| 5563439 |
Variable operation speed MOS transistor |
Oct. 8, 1996 |
| 5561305 |
Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequency Schubnikov-de Haas analysis |
Oct. 1, 1996 |
| 5543636 |
Insulated gate field effect transistor |
Aug. 6, 1996 |
| 5544038 |
Synchronous rectifier package for high-efficiency operation |
Aug. 6, 1996 |
| 5543652 |
Semiconductor device having a two-channel MISFET arrangement defined by I-V characteristic having a negative resistance curve and SRAM cells employing the same |
Aug. 6, 1996 |
| 5534723 |
Semiconductor integrated circuit device having output and internal circuit MISFETS |
Jul. 9, 1996 |
| 5532502 |
Conductivity-modulated-type MOSFET |
Jul. 2, 1996 |
| 5528542 |
Sense amplifier |
Jun. 18, 1996 |
| 5521411 |
Transistor spacer etch pinpoint structure |
May. 28, 1996 |
| 5519241 |
Circuit structure having at least one bipolar power component and method for the operation thereof |
May. 21, 1996 |
| 5493138 |
Single transistor non-volatile electrically alterable semiconductor memory device |
Feb. 20, 1996 |
| 5493141 |
Method and circuit for tunnel-effect programming of floating gate MOSFET transistors |
Feb. 20, 1996 |
| 5488247 |
MOS-type semiconductor clamping circuit |
Jan. 30, 1996 |
| 5463234 |
High-speed semiconductor gain memory cell with minimal area occupancy |
Oct. 31, 1995 |
| 5463241 |
Insulated-gate semiconductor device with a buried insulation layer |
Oct. 31, 1995 |
| 5449935 |
Semiconductor device including non-volatile memories |
Sep. 12, 1995 |
| 5446310 |
Integrated circuit power device with external disabling of defective devices and method of fabricating same |
Aug. 29, 1995 |
| 5436485 |
Transistor arrangement for forming basic cell of master-slice type semiconductor integrated circuit device and master-slice type semiconductor integrated circuit device |
Jul. 25, 1995 |
| 5436484 |
Semiconductor integrated circuit device having input protective elements and internal circuits |
Jul. 25, 1995 |
| 5436483 |
Semiconductor integrated circuit device having a first MISFET of an output buffer circuit and a second MISFET of an internal circuit |
Jul. 25, 1995 |
| 5432364 |
Output circuit device for charge transfer element |
Jul. 11, 1995 |
| 5430323 |
Injection control-type Schottky barrier rectifier |
Jul. 4, 1995 |
| 5430673 |
Buried bit line ROM with low bit line resistance |
Jul. 4, 1995 |
| 5426324 |
High capacitance multi-level storage node for high density TFT load SRAMs with low soft error rates |
Jun. 20, 1995 |
| 5424569 |
Array of non-volatile sonos memory cells |
Jun. 13, 1995 |
| 5414277 |
Thin film transistor which prevents generation of hot carriers |
May. 9, 1995 |
| 5412227 |
MOS-controlled thyristor with non-planar geometry |
May. 2, 1995 |
| 5410172 |
Thin film transistor and preparation thereof |
Apr. 25, 1995 |
| 5410173 |
Semiconductor integrated circuit device |
Apr. 25, 1995 |
| 5401998 |
Trench isolation using doped sidewalls |
Mar. 28, 1995 |
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