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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.

Sub-classes under this class:

Class Number	Class Name	Patents
257/378	Combined with bipolar transistor	534
257/379	Combined with passive components (e.g., resistors)	609
257/369	Complementary insulated gate field effect transistors	1,327
257/393	Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor	282
257/392	Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)	396
257/390	Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom))	838
257/382	With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)	715
257/394	With means to prevent parasitic conduction channels	169
257/386	With means to reduce parasitic capacitance	155
257/401	With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet)	1,493

Patents under this class:

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Patent Number	Title Of Patent	Date Issued
6140685	Static memory cell and method of manufacturing a static memory cell	Oct. 31, 2000
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6136677	Method of fabricating semiconductor chips with silicide and implanted junctions	Oct. 24, 2000
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6104040	Liquid crystal display having a transistor with doped region in an active semiconductor layer	Aug. 15, 2000
6104056	Semiconductor element and semiconductor memory device using the same	Aug. 15, 2000
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6101120	Semiconductor memory device	Aug. 8, 2000
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6093967	Self-aligned silicide contacts formed from deposited silicon	Jul. 25, 2000
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6064096	Semiconductor LDD device having halo impurity regions	May. 16, 2000
6063699	Methods for making high-aspect ratio holes in semiconductor and its application to a gate damascene process for sub- 0.05 micron mosfets	May. 16, 2000
6064097	Wiring layers for a semiconductor integrated circuit device	May. 16, 2000
6060731	Insulated-gate semiconductor device having a contact region in electrical contact with a body region and a source region	May. 9, 2000
6054742	Structure for cross coupled thin film transistors and static random access memory cell	Apr. 25, 2000
6046478	P-channel thin film transistor having a gate on the drain region of a field effect transistor	Apr. 4, 2000
6043540	Static RAM having cell transistors with longer gate electrodes than transistors in the periphery of the cell	Mar. 28, 2000
6043538	Device structure for high voltage tolerant transistor on a 3.3 volt process	Mar. 28, 2000
6040605	Semiconductor memory device	Mar. 21, 2000
6033963	Method of forming a metal gate for CMOS devices using a replacement gate process	Mar. 7, 2000
6030548	SRAM memory device having reduced size	Feb. 29, 2000
6028340	Static random access memory cell having a field region	Feb. 22, 2000
6025635	Short channel transistor having resistive gate extensions	Feb. 15, 2000
6018184	Semiconductor structure useful in a self-aligned contact having multiple insulation layers of non-uniform thickness	Jan. 25, 2000
6013569	One step salicide process without bridging	Jan. 11, 2000
6005296	Layout for SRAM structure	Dec. 21, 1999
5998827	Semiconductor memory device and method of manufacturing the same	Dec. 7, 1999
5990516	MOSFET with a thin gate insulating film	Nov. 23, 1999
5986309	Semiconductor integrated circuit apparatus having a plurality of well bias voltage supply circuits	Nov. 16, 1999
5976926	Static memory cell and method of manufacturing a static memory cell	Nov. 2, 1999
5973368	Monolithic class D amplifier	Oct. 26, 1999
5962900	High-density diode-based read-only memory device	Oct. 5, 1999
5963803	Method of making N-channel and P-channel IGFETs with different gate thicknesses and spacer widths	Oct. 5, 1999
5952720	Buried contact structure	Sep. 14, 1999
5949111	Semiconductor device and fabrication process therefor	Sep. 7, 1999
5949092	Ultra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulator	Sep. 7, 1999
5949110	DRAM having peripheral circuitry in which source-drain interconnection contact of a MOS transistor is made small by utilizing a pad layer and manufacturing method thereof	Sep. 7, 1999
5945715	Semiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the same	Aug. 31, 1999
5945698	Field effect transistor assemblies and transistor gate block stacks	Aug. 31, 1999
5936285	Gate array layout to accommodate multi-angle ion implantation	Aug. 10, 1999
5932918	ESD protection clamp for mixed voltage I/O stages using NMOS transistors	Aug. 3, 1999
5929492	Contact structure of column gate and data line	Jul. 27, 1999