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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
840 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,494 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6313510 |
Integrated circuits including metal silicide contacts extending between a gate electrode and a source/drain region |
Nov. 6, 2001 |
| 6309053 |
Ink jet printhead having a ground bus that overlaps transistor active regions |
Oct. 30, 2001 |
| 6310365 |
Surface voltage sustaining structure for semiconductor devices having floating voltage terminal |
Oct. 30, 2001 |
| 6307233 |
Electrically isolated double gated transistor |
Oct. 23, 2001 |
| 6307238 |
Methods of forming field effect transistors and field effect transistor circuitry |
Oct. 23, 2001 |
| 6303954 |
Semiconductor device with a high-voltage component in semiconductor on insulator |
Oct. 16, 2001 |
| 6300660 |
Bipolar transistor that can be fabricated in CMOS |
Oct. 9, 2001 |
| 6297700 |
RF power transistor having cascaded cells with phase matching between cells |
Oct. 2, 2001 |
| 6294816 |
Secure integrated circuit |
Sep. 25, 2001 |
| 6291832 |
Resonant tunneling diode latch |
Sep. 18, 2001 |
| 6291852 |
Semiconductor element and semiconductor memory device using the same |
Sep. 18, 2001 |
| 6291859 |
Integrated circuits |
Sep. 18, 2001 |
| 6285040 |
Internal-logic inspection circuit |
Sep. 4, 2001 |
| 6285240 |
Low threshold MOS two phase negative charge pump |
Sep. 4, 2001 |
| 6281555 |
Integrated circuit having isolation structures |
Aug. 28, 2001 |
| 6281550 |
Transistor and logic circuit of thin silicon-on-insulator wafers based on gate induced drain leakage currents |
Aug. 28, 2001 |
| 6278166 |
Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxide |
Aug. 21, 2001 |
| 6274913 |
Shielded channel transistor structure with embedded source/drain junctions |
Aug. 14, 2001 |
| 6274887 |
Semiconductor device and manufacturing method therefor |
Aug. 14, 2001 |
| 6268627 |
Semiconductor device having impurity regions with varying impurity concentrations |
Jul. 31, 2001 |
| 6265746 |
Highly resistive interconnects |
Jul. 24, 2001 |
| 6255705 |
Producing devices having both active matrix display circuits and peripheral circuits on a same substrate |
Jul. 3, 2001 |
| 6255704 |
Semiconductor device and method for fabricating the same |
Jul. 3, 2001 |
| 6255699 |
Pillar CMOS structure |
Jul. 3, 2001 |
| 6252279 |
DMOS transistor having a high reliability and a method for fabricating the same |
Jun. 26, 2001 |
| 6249030 |
BI-CMOS integrated circuit |
Jun. 19, 2001 |
| 6245618 |
Mosfet with localized amorphous region with retrograde implantation |
Jun. 12, 2001 |
| 6246080 |
Semiconductor device having bent gate electrode and process for production thereof |
Jun. 12, 2001 |
| 6232670 |
Semiconductor memory device and method of fabricating the same |
May. 15, 2001 |
| 6232649 |
Bipolar silicon-on-insulator structure and process |
May. 15, 2001 |
| 6232637 |
Semiconductor fabrication having multi-level transistors and high density interconnect therebetween |
May. 15, 2001 |
| 6229184 |
Semiconductor device with a modulated gate oxide thickness |
May. 8, 2001 |
| 6229164 |
MOSFET with a thin gate insulating film |
May. 8, 2001 |
| 6225655 |
Ferroelectric transistors using thin film semiconductor gate electrodes |
May. 1, 2001 |
| 6225668 |
Semiconductor device having a single crystal gate electrode and insulation |
May. 1, 2001 |
| 6215138 |
Semiconductor device and its fabrication method |
Apr. 10, 2001 |
| 6215158 |
Device and method for forming semiconductor interconnections in an integrated circuit substrate |
Apr. 10, 2001 |
| 6211555 |
Semiconductor device with a pair of transistors having dual work function gate electrodes |
Apr. 3, 2001 |
| 6201267 |
Compact low power complement FETs |
Mar. 13, 2001 |
| 6198138 |
Analogue misfet with threshold voltage adjuster |
Mar. 6, 2001 |
| 6194765 |
Integrated electrical circuit having at least one memory cell and method for fabricating it |
Feb. 27, 2001 |
| 6191456 |
Lateral IGBT in an SOI configuration and method for its fabrication |
Feb. 20, 2001 |
| 6191450 |
Semiconductor device with field shield electrode |
Feb. 20, 2001 |
| 6188110 |
Integration of isolation with epitaxial growth regions for enhanced device formation |
Feb. 13, 2001 |
| 6184566 |
Method and structure for isolating semiconductor devices after transistor formation |
Feb. 6, 2001 |
| 6184559 |
Active matrix display device having multiple gate electrode portions |
Feb. 6, 2001 |
| 6180986 |
Semiconductor device and method of manufacturing the same |
Jan. 30, 2001 |
| 6180981 |
Termination structure for semiconductor devices and process for manufacture thereof |
Jan. 30, 2001 |
| 6177687 |
Semiconductor device having gate electrode shared between two sets of active regions and fabrication thereof |
Jan. 23, 2001 |
| 6160277 |
Field effect transistor assemblies and transistor gate block stacks |
Dec. 12, 2000 |
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