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Class Information
Number: 257/368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Insulated gate field effect transistor in integrated circuit
Description: Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 257/378 |
Combined with bipolar transistor |
534 |
| 257/379 |
Combined with passive components (e.g., resistors) |
609 |
| 257/369 |
Complementary insulated gate field effect transistors |
1,327 |
| 257/393 |
Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
282 |
| 257/392 |
Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
396 |
| 257/390 |
Matrix or array of field effect transistors (e.g., array of fets only some of which are completed, or structure for mask programmed read-only memory (rom)) |
840 |
| 257/382 |
With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
715 |
| 257/394 |
With means to prevent parasitic conduction channels |
169 |
| 257/386 |
With means to reduce parasitic capacitance |
155 |
| 257/401 |
With specified physical layout (e.g., ring gate, source/drain regions shared between plural fets, plural sections connected in parallel to form power mosfet) |
1,494 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 6476453 |
Semiconductor integrated circuit device having capacitor element |
Nov. 5, 2002 |
| 6472710 |
Field MOS transistor and semiconductor integrated circuit including the same |
Oct. 29, 2002 |
| 6469400 |
Semiconductor memory device |
Oct. 22, 2002 |
| 6465849 |
CMOS structure having dynamic threshold voltage |
Oct. 15, 2002 |
| 6459128 |
Field-effect transistor |
Oct. 1, 2002 |
| 6455433 |
Method for forming square-shouldered sidewall spacers and devices fabricated |
Sep. 24, 2002 |
| 6452237 |
Artificial neuron on the base of .beta.-driven threshold element |
Sep. 17, 2002 |
| 6452272 |
Semiconductor device |
Sep. 17, 2002 |
| 6448594 |
Method and system for processing a semiconductor device |
Sep. 10, 2002 |
| 6445047 |
Semiconductor device and method for fabricating the same |
Sep. 3, 2002 |
| 6445051 |
Method and system for providing contacts with greater tolerance for misalignment in a flash memory |
Sep. 3, 2002 |
| 6445033 |
Gate-insulating film including oxide film |
Sep. 3, 2002 |
| 6441440 |
Semiconductor device and circuit having low tolerance to ionizing radiation |
Aug. 27, 2002 |
| 6433396 |
Trench MOSFET with integrated schottky device and process for its manufacture |
Aug. 13, 2002 |
| 6429492 |
Low-power CMOS device and logic gates/circuits therewith |
Aug. 6, 2002 |
| 6424014 |
Semiconductor element with electric field reducing device mounted therein for increasing dielectric strength |
Jul. 23, 2002 |
| 6417545 |
Semiconductor device |
Jul. 9, 2002 |
| 6417546 |
P-type FET in a CMOS with nitrogen atoms in the gate dielectric |
Jul. 9, 2002 |
| 6410966 |
Ratio circuit |
Jun. 25, 2002 |
| 6410952 |
MOSFET with a thin gate insulating film |
Jun. 25, 2002 |
| 6406945 |
Method for forming a transistor gate dielectric with high-K and low-K regions |
Jun. 18, 2002 |
| 6407433 |
Preventing gate oxide damage by post poly definition implantation while gate mask is on |
Jun. 18, 2002 |
| 6407463 |
Semiconductor memory device having gate electrode, drain-drain contact, and drain-gate contact layers |
Jun. 18, 2002 |
| 6404018 |
Static memory cell and method of manufacturing a static memory cell |
Jun. 11, 2002 |
| 6404019 |
Sense amplifier |
Jun. 11, 2002 |
| 6398347 |
Energy balanced ink jet printhead |
Jun. 4, 2002 |
| 6388294 |
Integrated circuit using damascene gate structure |
May. 14, 2002 |
| 6384454 |
Process for manufacturing integrated circuit SRAM |
May. 7, 2002 |
| 6380594 |
Semiconductor device |
Apr. 30, 2002 |
| 6373114 |
Barrier in gate stack for improved gate dielectric integrity |
Apr. 16, 2002 |
| 6369416 |
Semiconductor device with contacts having a sloped profile |
Apr. 9, 2002 |
| 6359804 |
Static semiconductor memory cell formed in an n-well and p-well |
Mar. 19, 2002 |
| 6359315 |
Circuits for controlling a bidirectional terminal and systems using the same |
Mar. 19, 2002 |
| 6353249 |
MOSFET with high dielectric constant gate insulator and minimum overlap capacitance |
Mar. 5, 2002 |
| 6353248 |
Optimized decoupling capacitor using lithographic dummy filler |
Mar. 5, 2002 |
| 6351013 |
Low-K sub spacer pocket formation for gate capacitance reduction |
Feb. 26, 2002 |
| 6351014 |
Semiconductor device having different field oxide sizes |
Feb. 26, 2002 |
| 6351015 |
Transistor device of MOS structure in which variation of output impedance resulting from manufacturing error is reduced |
Feb. 26, 2002 |
| 6348717 |
Semiconductor integrated circuit having an improved voltage switching circuit |
Feb. 19, 2002 |
| 6347048 |
Semiconductor memory device |
Feb. 12, 2002 |
| 6342717 |
Semiconductor device and method for producing same |
Jan. 29, 2002 |
| 6342718 |
Compact SRAM cell using tunnel diodes |
Jan. 29, 2002 |
| 6337503 |
Integrated power circuit with reduced parasitic current flow |
Jan. 8, 2002 |
| 6333517 |
Semiconductor integrated circuit device equipped with power make-up circuit used in burn-in test after packaging and method for testing the same |
Dec. 25, 2001 |
| 6333542 |
Semiconductor device and method of manufacturing the same |
Dec. 25, 2001 |
| 6331725 |
Integrated circuitry |
Dec. 18, 2001 |
| 6329697 |
Semiconductor device including a charge-dispersing region and fabricating method thereof |
Dec. 11, 2001 |
| 6326670 |
Semiconductor device and method for manufacturing the same |
Dec. 4, 2001 |
| 6320233 |
CMOS semiconductor device |
Nov. 20, 2001 |
| 6316811 |
Selective CVD TiSi2 deposition with TiSi2 liner |
Nov. 13, 2001 |
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