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Class Information
Number: 257/365
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > With plural, separately connected, gate electrodes in same device
Description: Subject matter wherein the device has more than one gate (control) electrode, in the same device, with separate electrical connections to the plural gate (control) electrodes.










Sub-classes under this class:

Class Number Class Name Patents
257/366 Overlapping gate electrodes 207


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8710550 Semiconductor device with hetero-junction bodies Apr. 29, 2014
8692317 Semiconductor storage device Apr. 8, 2014
8652889 Fin-transistor formed on a patterned STI region by late fin etch Feb. 18, 2014
8643124 Oxide-nitride-oxide stack having multiple oxynitride layers Feb. 4, 2014
8637934 Semiconductor device having vertical channels and method of manufacturing the same Jan. 28, 2014
8633550 Semiconductor device Jan. 21, 2014
8633544 Twin MONOS array for high speed application Jan. 21, 2014
8629420 Drain extended MOS device for bulk FinFET technology Jan. 14, 2014
8629039 Substrate fins with different heights Jan. 14, 2014
8618609 Apparatus for improving multi-gate device performance Dec. 31, 2013
8614121 Method of manufacturing back gate triggered silicon controlled rectifiers Dec. 24, 2013
8614487 Split dual gate field effect transistor Dec. 24, 2013
8604549 Multi-gate field-effect transistor with enhanced and adaptable low-frequency noise Dec. 10, 2013
8598669 Semiconductor device, and its manufacturing method Dec. 3, 2013
8598666 Semiconductor structure and method for manufacturing the same Dec. 3, 2013
8598641 Sea-of-fins structure on a semiconductor substrate and method of fabrication Dec. 3, 2013
8592912 Semiconductor device and method of fabricating the same Nov. 26, 2013
8576614 Tunnel transistor, logical gate including the transistor, static random-access memory using the logical gate and method for making such a tunnel transistor Nov. 5, 2013
8569843 Semiconductor device Oct. 29, 2013
8541846 Semiconductor device Sep. 24, 2013
8536652 Non-volatile memory devices including low-K dielectric gaps in substrates Sep. 17, 2013
8536651 Multi-gate transistor having sidewall contacts Sep. 17, 2013
8530884 Strain inducing semiconductor regions Sep. 10, 2013
8530966 Semiconductor device Sep. 10, 2013
8530971 Borderless contacts for semiconductor devices Sep. 10, 2013
8530972 Double gate MOSFET with coplanar surfaces for contacting source, drain, and bottom gate Sep. 10, 2013
8525268 Vertical discrete device with drain and gate electrodes on the same surface and method for making the same Sep. 3, 2013
8525267 Device and method for forming Fins in integrated circuitry Sep. 3, 2013
8525265 Electrostatic discharge protection circuit Sep. 3, 2013
8524546 Formation of multi-height MUGFET Sep. 3, 2013
8524545 Simultaneous formation of FinFET and MUGFET Sep. 3, 2013
8513739 Metal-gate high-k reference structure Aug. 20, 2013
8507989 Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance Aug. 13, 2013
8508289 Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer Aug. 13, 2013
8502318 SRAM memory cell provided with transistors having a vertical multichannel structure Aug. 6, 2013
8502296 Non-volatile memory cell with asymmetrical split gate and related system and method Aug. 6, 2013
8502279 Nano-electro-mechanical system (NEMS) structures with actuatable semiconductor fin on bulk substrates Aug. 6, 2013
8492230 Semiconductor device and method of manufacturing the same Jul. 23, 2013
8492797 Vertical structure semiconductor memory devices and methods of manufacturing the same Jul. 23, 2013
8482085 Power MOS electronic device and corresponding realizing method Jul. 9, 2013
8471344 Integrated circuit device with series-connected fin-type field effect transistors and integrated voltage equalization and method of forming the device Jun. 25, 2013
8471338 Dual polysilicon gate of a semiconductor device with a multi-plane channel Jun. 25, 2013
8450194 Method to modify the shape of a cavity using angled implantation May. 28, 2013
8441074 Substrate fins with different heights May. 14, 2013
8432216 Data-path cell on an SeOI substrate with a back control gate beneath the insulating layer Apr. 30, 2013
8426920 MOSFET and method for manufacturing the same Apr. 23, 2013
8426923 Multiple-gate semiconductor device and method Apr. 23, 2013
8421156 FET with self-aligned back gate Apr. 16, 2013
8421059 Strain-inducing semiconductor regions Apr. 16, 2013
8420487 Power MOS electronic device and corresponding realizing method Apr. 16, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13 14










 
 
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