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Class Information
Number: 257/354
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Single crystal semiconductor layer on insulating substrate (soi) > Substrate is single crystal insulator (e.g., sapphire or spinel) > Single crystal islands of semiconductor layer containing only one active device > Including means to eliminate island edge effects (e.g., insulating filling between islands, or ions in island edges)
Description: Subject matter wherein means are provided to eliminate deleterious effects caused by the edges of each island, such means including, for example, electrically insulating filling between islands, or channel stop regions located in the edges of islands.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8703557 Methods of removing dummy fin structures when forming finFET devices Apr. 22, 2014
8674471 Semiconductor device supplying charging current to element to be charged Mar. 18, 2014
8624321 Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same Jan. 7, 2014
8624320 Process for forming fins for a FinFET device Jan. 7, 2014
8587062 Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts Nov. 19, 2013
8535996 Substrate having a charged zone in an insulating buried layer Sep. 17, 2013
8507989 Extremely thin semiconductor-on-insulator (ETSOI) FET with a back gate and reduced parasitic capacitance Aug. 13, 2013
8502317 Level shifter circuits for integrated circuits Aug. 6, 2013
8426920 MOSFET and method for manufacturing the same Apr. 23, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8390026 Electronic device including a heterojunction region Mar. 5, 2013
8288248 Method of manufacturing semiconductor device having island-like single crystal semiconductor layer Oct. 16, 2012
8273629 Through-gate implant for body dopant Sep. 25, 2012
8188543 Electronic device including a conductive structure extending through a buried insulating layer May. 29, 2012
8188564 Semiconductor device having a planarizing film formed in a region of a step portion May. 29, 2012
8169027 Substrate band gap engineered multi-gate pMOS devices May. 1, 2012
8134207 High breakdown voltage semiconductor circuit device Mar. 13, 2012
8124975 Display device with multi-gate TFTs of a pixel region having different relative areas of gate regions with respect to channel regions of the TFTs Feb. 28, 2012
8115254 Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same Feb. 14, 2012
8102000 P-channel germanium on insulator (GOI) one transistor memory cell Jan. 24, 2012
8044465 Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate Oct. 25, 2011
8013327 Electronic device Sep. 6, 2011
8013364 Semiconductor devices and structures thereof Sep. 6, 2011
7994574 Semiconductor substrate, semiconductor device, and method for manufacturing the semiconductor device Aug. 9, 2011
7943933 Thin film transistor substrate and display device with oxygen-containing layer May. 17, 2011
7939395 High-voltage SOI MOS device structure and method of fabrication May. 10, 2011
7928510 Manufacturing method of semiconductor device Apr. 19, 2011
7916230 Thin film transistor-liquid crystal display having an insulating layer exposing portions of a gate island Mar. 29, 2011
7906813 Semiconductor device having a first circuit block isolating a plurality of circuit blocks Mar. 15, 2011
7880233 Transistor with raised source and drain formed on SOI substrate Feb. 1, 2011
7863621 Thin film transistor Jan. 4, 2011
7816735 Integrated circuit devices including a transcription-preventing pattern Oct. 19, 2010
7795683 Thin film transistor structure Sep. 14, 2010
7772649 SOI field effect transistor with a back gate for modulating a floating body Aug. 10, 2010
7768071 Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices Aug. 3, 2010
7755140 Process charging and electrostatic damage protection in silicon-on-insulator technology Jul. 13, 2010
7755142 Thin-film transistor and image display device Jul. 13, 2010
7710477 CMOS image sensors having pixel arrays with uniform light sensitivity May. 4, 2010
7709895 Semiconductor device having insulating stripe patterns May. 4, 2010
7709305 Method for producing partial SOI structures comprising zones connecting a superficial layer and a substrate May. 4, 2010
7691688 Strained silicon CMOS on hybrid crystal orientations Apr. 6, 2010
7629651 Semiconductor memory device and manufacturing method therefor Dec. 8, 2009
7598584 Infrared solid-state image pickup apparatus and a production method thereof Oct. 6, 2009
7598605 Semiconductor device having capacitive insulation means and communication terminal using the device Oct. 6, 2009
7592671 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer Sep. 22, 2009
7582935 Methods for manufacturing SOI substrate using wafer bonding and complementary high voltage bipolar transistor using the SOI substrate Sep. 1, 2009
7579657 Semiconductor device with multiple channels Aug. 25, 2009
7531837 Multi-channel thin film transistor structure May. 12, 2009
7528447 Non-volatile semiconductor memory and method for controlling a non-volatile semiconductor memory May. 5, 2009
7527704 Method for preparing film structure comprising ferroelectric single crystal layer May. 5, 2009

1 2 3 4 5 6 7

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