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Class Information
Number: 257/354
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Single crystal semiconductor layer on insulating substrate (soi) > Substrate is single crystal insulator (e.g., sapphire or spinel) > Single crystal islands of semiconductor layer containing only one active device > Including means to eliminate island edge effects (e.g., insulating filling between islands, or ions in island edges)
Description: Subject matter wherein means are provided to eliminate deleterious effects caused by the edges of each island, such means including, for example, electrically insulating filling between islands, or channel stop regions located in the edges of islands.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7423324 |
Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the same |
Sep. 9, 2008 |
| 7417283 |
CMOS device with dual polycide gates and method of manufacturing the same |
Aug. 26, 2008 |
| 7394116 |
Semiconductor device including a multi-channel fin field effect transistor including protruding active portions and method of fabricating the same |
Jul. 1, 2008 |
| RE40339 |
Silicon-on-insulator chip having an isolation barrier for reliability |
May. 27, 2008 |
| 7355247 |
Silicon on diamond-like carbon devices |
Apr. 8, 2008 |
| 7317227 |
Method for forming pattern of stacked film |
Jan. 8, 2008 |
| 7276793 |
Semiconductor device and semiconductor module |
Oct. 2, 2007 |
| 7274072 |
Hybrid bulk-SOI 6T-SRAM cell for improved cell stability and performance |
Sep. 25, 2007 |
| 7268391 |
Semiconductor device having an under stepped gate for preventing gate failure and method of manufacturing the same |
Sep. 11, 2007 |
| 7259428 |
Semiconductor device using SOI structure having a triple-well region |
Aug. 21, 2007 |
| 7221032 |
Semiconductor device including FinFET having vertical double gate structure and method of fabricating the same |
May. 22, 2007 |
| 7208803 |
Method of forming a raised source/drain and a semiconductor device employing the same |
Apr. 24, 2007 |
| 7180109 |
Field effect transistor and method of fabrication |
Feb. 20, 2007 |
| 7176525 |
Process for production of SOI substrate and process for production of semiconductor device |
Feb. 13, 2007 |
| 7176527 |
Semiconductor device and method of fabricating same |
Feb. 13, 2007 |
| 7166894 |
Schottky power diode with SiCOI substrate and process for making such diode |
Jan. 23, 2007 |
| 7148543 |
Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions |
Dec. 12, 2006 |
| 7112511 |
CMOS image sensor having prism and method for fabricating the same |
Sep. 26, 2006 |
| 7105897 |
Semiconductor structure and method for integrating SOI devices and bulk devices |
Sep. 12, 2006 |
| 7102187 |
Gate structure of a semiconductor device |
Sep. 5, 2006 |
| 7098508 |
Ultra-thin silicon-on-insulator and strained-silicon-direct-on-insulator with hybrid crystal orientations |
Aug. 29, 2006 |
| 7091588 |
Semiconductor device including primary and secondary side circuits on first and second substrates with capacitive insulation |
Aug. 15, 2006 |
| 7091561 |
Field effect transistor and method of manufacturing the same |
Aug. 15, 2006 |
| 7087965 |
Strained silicon CMOS on hybrid crystal orientations |
Aug. 8, 2006 |
| 7084428 |
Transistor, integrated circuit, electro-optic device, electronic instrument and method of manufacturing a transistor |
Aug. 1, 2006 |
| 7064387 |
Silicon-on-insulator (SOI) substrate and method for manufacturing the same |
Jun. 20, 2006 |
| 7064391 |
Bond and back side etchback transistor fabrication process |
Jun. 20, 2006 |
| 7053453 |
Substrate contact and method of forming the same |
May. 30, 2006 |
| 7030467 |
Method of deforming a pattern and semiconductor device formed by utilizing deformed pattern |
Apr. 18, 2006 |
| 7019379 |
Semiconductor device comprising voltage regulator element |
Mar. 28, 2006 |
| 7002215 |
Floating entrance guard for preventing electrical short circuits |
Feb. 21, 2006 |
| 6992358 |
Semiconductor device and method for manufacturing the same |
Jan. 31, 2006 |
| 6965149 |
Epitaxial semiconductor wafer and a manufacturing method thereof |
Nov. 15, 2005 |
| 6965147 |
Semiconductor device including transistors formed in semiconductor layer having single-crystal structure isolated from substrate |
Nov. 15, 2005 |
| 6955955 |
STI liner for SOI structure |
Oct. 18, 2005 |
| 6949777 |
Method of controlling insulated gate transistor |
Sep. 27, 2005 |
| 6940138 |
Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment |
Sep. 6, 2005 |
| 6940130 |
Body contact MOSFET |
Sep. 6, 2005 |
| 6900504 |
Integrated structure effective to form a MOS component in a dielectrically insulated well |
May. 31, 2005 |
| 6891229 |
Inverted isolation formed with spacers |
May. 10, 2005 |
| 6879002 |
Semiconductor device having an SOI substrate |
Apr. 12, 2005 |
| 6872979 |
Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layers |
Mar. 29, 2005 |
| 6861716 |
Ladder-type gate structure for four-terminal SOI semiconductor device |
Mar. 1, 2005 |
| 6847082 |
Semiconductor integrated device including an electrostatic breakdown protection circuit having uniform electrostatic surge response |
Jan. 25, 2005 |
| 6847065 |
Radiation-hardened transistor fabricated by modified CMOS process |
Jan. 25, 2005 |
| 6835983 |
Silicon-on-insulator (SOI) integrated circuit (IC) chip with the silicon layers consisting of regions of different thickness |
Dec. 28, 2004 |
| 6825534 |
Semiconductor device on a combination bulk silicon and silicon-on-insulator (SOI) substrate |
Nov. 30, 2004 |
| 6815774 |
Dielectrically separated wafer and method of the same |
Nov. 9, 2004 |
| 6791145 |
Semiconductor device formed by utilizing deformed pattern |
Sep. 14, 2004 |
| 6787851 |
Semiconductor devices including a silicon-on-insulator layer |
Sep. 7, 2004 |
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