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Class Information
Number: 257/351
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Single crystal semiconductor layer on insulating substrate (soi) > Insulated electrode device is combined with diverse type device (e.g., complementary mosfets, fet with resistor, etc.) > Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)
Description: Subject matter wherein the field effect transistor and the diverse type device are field effect transistors which are complementary in conductivity type to each other (e.g., provide a CMOS structure).

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Patent Number Title Of Patent Date Issued
8710571 Polarity switching member of dot inversion system Apr. 29, 2014
8691659 Method for forming void-free dielectric layer Apr. 8, 2014
8686404 Organic semiconductors capable of ambipolar transport Apr. 1, 2014
8686506 High performance devices and high density devices on single chip Apr. 1, 2014
8674443 Substrate provided with a semi-conducting area associated with two counter-electrodes and device comprising one such substrate Mar. 18, 2014
8673699 Semiconductor structure having NFET extension last implants Mar. 18, 2014
8664660 Semiconductor device and manufacturing method thereof Mar. 4, 2014
8664722 Thin film transistor with metal silicide layer Mar. 4, 2014
8653598 Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same Feb. 18, 2014
8653599 Strained SiGe nanowire having (111)-oriented sidewalls Feb. 18, 2014
8643113 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer Feb. 4, 2014
8629433 Method for manufacturing semiconductor device Jan. 14, 2014
8623729 Methods of fabricating semiconductor devices with silicon-germanium channels including hydrogen Jan. 7, 2014
8624318 Semiconductor switching circuit employing quantum dot structures Jan. 7, 2014
8624321 Thin film transistor including a microcrystalline semiconductor layer and amorphous semiconductor layer and display device including the same Jan. 7, 2014
8604548 Semiconductor device having ESD device Dec. 10, 2013
8598666 Semiconductor structure and method for manufacturing the same Dec. 3, 2013
8598663 Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions Dec. 3, 2013
8598665 Controlling threshold voltage in carbon based field effect transistors Dec. 3, 2013
8592909 Transistor including single layer reentrant profile Nov. 26, 2013
8586437 Semiconductor device and method of manufacturing the semiconductor device Nov. 19, 2013
8581257 Circuit board and display device Nov. 12, 2013
8581309 Semiconductor device Nov. 12, 2013
8580624 Nanowire FET and finFET hybrid technology Nov. 12, 2013
8569159 CMOS structure including non-planar hybrid orientation substrate with planar gate electrodes and method for fabrication Oct. 29, 2013
8564064 Controlled fin-merging for fin type FET devices Oct. 22, 2013
8558318 Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates Oct. 15, 2013
8552502 Structure and method to make replacement metal gate and contact metal Oct. 8, 2013
8546203 Semiconductor structure having NFET extension last implants Oct. 1, 2013
8536579 Electronic device having spatially inverted thin film transistors Sep. 17, 2013
8536654 Structure and method for dual work function metal gate CMOS with selective capping Sep. 17, 2013
8536041 Method for fabricating transistor with high-K dielectric sidewall spacer Sep. 17, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8525266 Semiconductor body having a terminal cell Sep. 3, 2013
8525528 Method and device for evaluating electric performances of an FDSOI transistor Sep. 3, 2013
8502307 Vertical power semiconductor carrier having laterally isolated circuit areas Aug. 6, 2013
8492846 Stress-generating shallow trench isolation structure having dual composition Jul. 23, 2013
8492839 Same-chip multicharacteristic semiconductor structures Jul. 23, 2013
8492844 Fully depleted SOI device with buried doped layer Jul. 23, 2013
8487380 Transistor with reduced charge carrier mobility Jul. 16, 2013
8482070 Silicon-on-insulator CMOS integrated circuit with multiple threshold voltages and a method for designing the same Jul. 9, 2013
8476678 CMOS Transistor with dual high-k gate dielectric Jul. 2, 2013
8476706 CMOS having a SiC/SiGe alloy stack Jul. 2, 2013
8476708 Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration Jul. 2, 2013
8471254 Liquid crystal cells with uniform cell gap and methods of manufacture Jun. 25, 2013
8470674 Structure, method and system for complementary strain fill for integrated circuit chips Jun. 25, 2013
8460981 Use of contacts to create differential stresses on devices Jun. 11, 2013
8445963 Multi-gate semiconductor devices with improved carrier mobility May. 21, 2013
8445358 Method for manufacturing semiconductor substrate and method for manufacturing semiconductor device May. 21, 2013
8445965 Strained semiconductor devices and methods of fabricating strained semiconductor devices May. 21, 2013

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