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Class Information
Number: 257/349
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Single crystal semiconductor layer on insulating substrate (soi) > With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate
Description: Subject matter wherein the SOI device includes means to prevent undesirable stray current to flow along the interface between the semiconductor layer and the insulating substrate.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8704305 Thin film transistor Apr. 22, 2014
8673704 FinFET and method for manufacturing the same Mar. 18, 2014
8643110 Localized biasing for silicon on insulator structures Feb. 4, 2014
8624665 Method of operating semiconductor device Jan. 7, 2014
8610181 V-groove source/drain MOSFET and process for fabricating same Dec. 17, 2013
8610200 Nitride read only memory device with buried diffusion spacers and method for making the same Dec. 17, 2013
8598663 Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions Dec. 3, 2013
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8575699 Thin box metal backgate extremely thin SOI device Nov. 5, 2013
8552500 Structure for CMOS ETSOI with multiple threshold voltages and active well bias capability Oct. 8, 2013
8525342 Dual-side interconnected CMOS for stacked integrated circuits Sep. 3, 2013
8461653 Semiconductor devices including fin shaped semiconductor regions and stress inducing layers Jun. 11, 2013
8426919 Integrated circuitry Apr. 23, 2013
8389995 Epitaxial solid-state semiconducting heterostructures and method for making same Mar. 5, 2013
8357975 Semiconductor-on-insulator with back side connection Jan. 22, 2013
8330170 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods Dec. 11, 2012
8278710 Guard ring integrated LDMOS Oct. 2, 2012
8269277 RESURF device including increased breakdown voltage Sep. 18, 2012
8258575 Isolated drain-centric lateral MOSFET Sep. 4, 2012
8252638 Method for forming under a thin layer of a first material portions of another material and/or empty areas Aug. 28, 2012
8232597 Semiconductor-on-insulator with back side connection Jul. 31, 2012
8227867 Body contacted hybrid surface semiconductor-on-insulator devices Jul. 24, 2012
8207581 Semiconductor device Jun. 26, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8188543 Electronic device including a conductive structure extending through a buried insulating layer May. 29, 2012
8164144 Semiconductor device and manufacturing method thereof Apr. 24, 2012
8159014 Localized biasing for silicon on insulator structures Apr. 17, 2012
8134207 High breakdown voltage semiconductor circuit device Mar. 13, 2012
8131225 BIAS voltage generation circuit for an SOI radio frequency switch Mar. 6, 2012
8120073 Trigate transistor having extended metal gate electrode Feb. 21, 2012
8119471 Semiconductor device and method for manufacturing the same Feb. 21, 2012
8105924 Deep trench based far subcollector reachthrough Jan. 31, 2012
8089126 Method and structures for improving substrate loss and linearity in SOI substrates Jan. 3, 2012
8080456 Robust top-down silicon nanowire structure using a conformal nitride Dec. 20, 2011
8080850 Semiconductor device having semiconductor layer on insulating structure and method of manufacturing the same Dec. 20, 2011
8067804 Semiconductor device having an SOI structure, manufacturing method thereof, and memory circuit Nov. 29, 2011
8063446 LDMOS device and method for manufacturing the same Nov. 22, 2011
8058689 Techniques to reduce substrate cross talk on mixed signal and RF circuit design Nov. 15, 2011
8039835 Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus Oct. 18, 2011
8035200 Neutralization of trapped charge in a charge accumulation layer of a semiconductor structure Oct. 11, 2011
8017989 Nonvolatile semiconductor memory device and method of manufacturing the same Sep. 13, 2011
7999320 SOI radio frequency switch with enhanced signal fidelity and electrical isolation Aug. 16, 2011
7994575 Metal-oxide-semiconductor device structures with tailored dopant depth profiles Aug. 9, 2011
7977196 Semiconductor device with increased channel area and fabrication method thereof Jul. 12, 2011
7977749 Semiconductor device with increased channel area Jul. 12, 2011
7973361 High breakdown voltage semiconductor device and fabrication method of the same Jul. 5, 2011
7964873 Thin film transistor array panel and manufacturing method thereof Jun. 21, 2011
7960792 Non-volatile memory with a stable threshold voltage on SOI substrate Jun. 14, 2011
7960791 Dense pitch bulk FinFET process by selective EPI and etch Jun. 14, 2011
7956416 Integrated circuitry Jun. 7, 2011

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