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Class Information
Number: 257/348
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Single crystal semiconductor layer on insulating substrate (soi) > Depletion mode field effect transistor
Description: Subject matter wherein the SOI device is a field effect transistor which operates in the depletion mode, i.e., a FET which passes maximum operating current with the gate to source biased to zero volts.

Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
5780904 Semiconductor integrated circuit device for obtaining extremely small constant current and timer circuit using constant current circuit Jul. 14, 1998
5770881 SOI FET design to reduce transient bipolar current Jun. 23, 1998
5675167 Enhancement-type semiconductor having reduced leakage current Oct. 7, 1997
5663589 Current regulating semiconductor integrated circuit device and fabrication method of the same Sep. 2, 1997
5627395 Vertical transistor structure May. 6, 1997
5612566 Bidirectional blocking lateral MOSFET with improved on-resistance Mar. 18, 1997
5608252 Semiconductor with implanted dielectric layer having patched pin-holes Mar. 4, 1997
5604368 Self-aligned double-gate MOSFET by selective lateral epitaxy Feb. 18, 1997
5587604 Contacted body silicon-on-insulator field effect transistor Dec. 24, 1996
5581107 Nonvolatile semiconductor memory that eases the dielectric strength requirements Dec. 3, 1996
5552614 Self-aligned thin film transistor with sidewall spacers Sep. 3, 1996
5552624 Multi-function electronic component, especially negative dynamic resistance element, and corresponding method of fabrication Sep. 3, 1996
5541431 Semiconductor device having transistor pair Jul. 30, 1996
5477073 Thin film semiconductor device including a driver and a matrix circuit Dec. 19, 1995
5418391 Semiconductor-on-insulator integrated circuit with selectively thinned channel region May. 23, 1995
5278430 Complementary semiconductor device using diamond thin film and the method of manufacturing this device Jan. 11, 1994
5264721 Insulated-gate FET on an SOI-structure Nov. 23, 1993
5264720 High withstanding voltage transistor Nov. 23, 1993
5151759 Fermi threshold silicon-on-insulator field effect transistor Sep. 29, 1992
5136350 Semiconductor mosfet having a projecting T-shaped portion Aug. 4, 1992
5103277 Radiation hard CMOS circuits in silicon-on-insulator films Apr. 7, 1992
5016070 Stacked CMOS sRAM with vertical transistors and cross-coupled capacitors May. 14, 1991
4914491 Junction field-effect transistors formed on insulator substrates Apr. 3, 1990
4899202 High performance silicon-on-insulator transistor with body node to source node connection Feb. 6, 1990
4872010 Analog-to-digital converter made with focused ion beam technology Oct. 3, 1989
4786952 High voltage depletion mode MOS power field effect transistor Nov. 22, 1988
4748485 Opposed dual-gate hybrid structure for three-dimensional integrated circuits May. 31, 1988
4746628 Method for making a thin film transistor May. 24, 1988
4746960 Vertical depletion-mode j-MOSFET May. 24, 1988
4611220 Junction-MOS power field effect transistor Sep. 9, 1986
4598305 Depletion mode thin film semiconductor photodetectors Jul. 1, 1986
4055884 Fabrication of power field effect transistors and the resulting structures Nov. 1, 1977

1 2 3 4 5 6 7 8

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