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Class Information
Number: 257/346
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)
Description: Subject matter wherein the short channel IGFET has a gate electrode which overlaps the source or drain or both by no more than the thickness of the depth of the source or drain (e.g., a self-aligned gate).










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8703611 Method for manufacturing a semiconductor structure Apr. 22, 2014
8686499 Semiconductor device Apr. 1, 2014
8680646 Self-aligned carbon electronics with embedded gate electrode Mar. 25, 2014
8674438 Semiconductor devices having stressor regions and related fabrication methods Mar. 18, 2014
8674442 Semiconductor device and manufacturing method thereof Mar. 18, 2014
8664725 Strain enhanced transistors with adjustable layouts Mar. 4, 2014
8633485 Display device and manufacturing method thereof Jan. 21, 2014
8614486 Low resistance source and drain extensions for ETSOI Dec. 24, 2013
8598661 Epitaxial process for forming semiconductor devices Dec. 3, 2013
8592280 Fin field effect transistor devices with self-aligned source and drain regions Nov. 26, 2013
8569121 Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same Oct. 29, 2013
8531619 Active matrix liquid crystal display device with overlapping conductive film and pixel electrode Sep. 10, 2013
8525257 LDMOS transistor with asymmetric spacer as gate Sep. 3, 2013
8502313 Double layer metal (DLM) power MOSFET Aug. 6, 2013
8502314 Multi-level options for power MOSFETS Aug. 6, 2013
8471329 Tunnel FET and methods for forming the same Jun. 25, 2013
8426283 Method of fabricating a double-gate transistor and a tri-gate transistor on a common substrate Apr. 23, 2013
8426916 Semiconductor integrated circuit devices having different thickness silicon-germanium layers Apr. 23, 2013
8368128 Compact field effect transistor with counter-electrode and fabrication method Feb. 5, 2013
8354711 Power MOSFET and its edge termination Jan. 15, 2013
8343870 Semiconductor device and method of manufacturing the same Jan. 1, 2013
8338884 Selective epitaxial growth of semiconductor materials with reduced defects Dec. 25, 2012
8334560 Reverse disturb immune asymmetrical sidewall floating gate devices Dec. 18, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8288805 Semiconductor device with gate-undercutting recessed region Oct. 16, 2012
8253163 High voltage semiconductor device including a free wheel diode Aug. 28, 2012
8248551 Semiconductor device including capacitor line parallel to source line Aug. 21, 2012
8217471 System and method for metal-oxide-semiconductor field effect transistor Jul. 10, 2012
8217465 Semiconductor constructions Jul. 10, 2012
8217448 Semiconductor device and method of forming a semiconductor device Jul. 10, 2012
8207030 Method for producing nMOS and pMOS devices in CMOS processing Jun. 26, 2012
8164111 High voltage semiconductor device including a free wheel diode Apr. 24, 2012
8154079 Semiconductor device and fabrication method of the semiconductor device Apr. 10, 2012
8143670 Self aligned field effect transistor structure Mar. 27, 2012
8138491 Self-aligned nanotube field effect transistor Mar. 20, 2012
8134152 CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a Mar. 13, 2012
8119487 Semiconductor device and method for fabricating the same Feb. 21, 2012
8110866 Non-volatile memory device having asymmetric source/drain junction and method for fabricating the same Feb. 7, 2012
8110462 Reduced finger end MOSFET breakdown voltage (BV) for electrostatic discharge (ESD) protection Feb. 7, 2012
8110464 SOI protection for buried plate implant and DT bottle ETCH Feb. 7, 2012
8093658 Electronic device with asymmetric gate strain Jan. 10, 2012
8063446 LDMOS device and method for manufacturing the same Nov. 22, 2011
8049254 Semiconductor device with gate-undercutting recessed region Nov. 1, 2011
8049275 Semiconductor device Nov. 1, 2011
8022477 Semiconductor apparatus having lateral type MIS transistor Sep. 20, 2011
8017997 Vertical metal-insulator-metal (MIM) capacitor using gate stack, gate spacer and contact via Sep. 13, 2011
8008216 Nitrogen profile in high-K dielectrics using ultrathin disposable capping layers Aug. 30, 2011
7968950 Semiconductor device having improved gate electrode placement and decreased area design Jun. 28, 2011
7968412 Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture Jun. 28, 2011
7948571 Semiconductor device having thin film transistor with particular drain electrode structure May. 24, 2011

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