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Class Information
Number: 257/344
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > With lightly doped portion of drain region adjacent channel (e.g., ldd structure)
Description: Subject matter wherein the short channel IGFET has a lightly doped portion of the drain region adjacent channel (e.g., a lightly doped drain structure).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619288 |
Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate |
Nov. 17, 2009 |
| 7615426 |
PMOS transistor with discontinuous CESL and method of fabrication |
Nov. 10, 2009 |
| 7605038 |
Semiconductor device and manufacturing method thereof |
Oct. 20, 2009 |
| 7602019 |
Drive circuit and drain extended transistor for use therein |
Oct. 13, 2009 |
| 7592669 |
Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel |
Sep. 22, 2009 |
| 7589373 |
Semiconductor device |
Sep. 15, 2009 |
| 7586153 |
Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors |
Sep. 8, 2009 |
| 7569856 |
Semiconductor device and method for manufacturing the same |
Aug. 4, 2009 |
| 7560734 |
Semiconductor device and manufacturing method thereof |
Jul. 14, 2009 |
| 7554156 |
Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same |
Jun. 30, 2009 |
| 7554116 |
Display device |
Jun. 30, 2009 |
| 7544997 |
Multi-layer source/drain stressor |
Jun. 9, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7538387 |
Stack SiGe for short channel improvement |
May. 26, 2009 |
| 7535058 |
Lateral DMOS structure |
May. 19, 2009 |
| 7531435 |
Semiconductor device and manufacturing method of the same |
May. 12, 2009 |
| 7528445 |
Wing gate transistor for integrated circuits |
May. 5, 2009 |
| 7525150 |
High voltage double diffused drain MOS transistor with medium operation voltage |
Apr. 28, 2009 |
| 7525165 |
Light emitting device and manufacturing method thereof |
Apr. 28, 2009 |
| 7514763 |
Semiconductor device and manufacturing method for the same |
Apr. 7, 2009 |
| 7514744 |
Semiconductor device including carrier accumulation layers |
Apr. 7, 2009 |
| 7511340 |
Semiconductor devices having gate structures and contact pads that are lower than the gate structures |
Mar. 31, 2009 |
| 7507607 |
Method of forming a silicide bridged anti-fuse with a tungsten plug metalization process |
Mar. 24, 2009 |
| 7495280 |
MOS devices with corner spacers |
Feb. 24, 2009 |
| 7492029 |
Asymmetric field effect transistors (FETs) |
Feb. 17, 2009 |
| 7492006 |
Semiconductor transistors having surface insulation layers and methods of fabricating such transistors |
Feb. 17, 2009 |
| 7473947 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby |
Jan. 6, 2009 |
| 7473976 |
Lateral power transistor with self-biasing electrodes |
Jan. 6, 2009 |
| 7465978 |
Field effect transistor with a high breakdown voltage and method of manufacturing the same |
Dec. 16, 2008 |
| 7456430 |
Semiconductor device and method for fabricating the same |
Nov. 25, 2008 |
| 7453120 |
Semiconductor structure |
Nov. 18, 2008 |
| 7446377 |
Transistors and manufacturing methods thereof |
Nov. 4, 2008 |
| 7446375 |
Quasi-vertical LDMOS device having closed cell layout |
Nov. 4, 2008 |
| 7442991 |
Display including casing and display unit |
Oct. 28, 2008 |
| 7439124 |
Method of manufacturing a semiconductor device and semiconductor device |
Oct. 21, 2008 |
| 7436026 |
Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions |
Oct. 14, 2008 |
| 7429769 |
Recessed channel field effect transistor (FET) device |
Sep. 30, 2008 |
| 7429771 |
Semiconductor device having halo implanting regions |
Sep. 30, 2008 |
| RE40486 |
Self-aligned non-volatile memory cell |
Sep. 9, 2008 |
| 7405458 |
Asymmetric field transistors (FETs) |
Jul. 29, 2008 |
| 7405450 |
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon |
Jul. 29, 2008 |
| 7400018 |
End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping |
Jul. 15, 2008 |
| 7396717 |
Method of forming a MOS transistor |
Jul. 8, 2008 |
| 7388228 |
Display device and method of manufacturing the same |
Jun. 17, 2008 |
| 7382021 |
Insulated gate field-effect transistor having III-VI source/drain layer(s) |
Jun. 3, 2008 |
| 7365390 |
Method of fabricating recess transistor in integrated circuit device and recess transistor in integrated circuit device fabricated by the same |
Apr. 29, 2008 |
| 7365393 |
Semiconductor device and fabrication method thereof |
Apr. 29, 2008 |
| 7365402 |
LDMOS transistor |
Apr. 29, 2008 |
| 7355245 |
Structure for reducing overlap capacitance in field effect transistors |
Apr. 8, 2008 |
| 7348631 |
Thin film transistor substrate and manufacturing method for the same |
Mar. 25, 2008 |
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