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Class Information
Number: 257/341
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > Plural sections connected in parallel (e.g., power mosfet)
Description: Subject matter wherein the graded channel doping short channel IGFET has more than one section and a plurality of those sections are connected electrically in parallel (e.g., to form a power MOSFET).










Sub-classes under this class:

Class Number Class Name Patents
257/342 With means to reduce on resistance 555


Patents under this class:

Patent Number Title Of Patent Date Issued
7981817 Method for manufacturing semiconductor device using multiple ion implantation masks Jul. 19, 2011
7977745 Tungsten plug drain extension Jul. 12, 2011
7977739 Semiconductor device and manufacturing method for semiconductor device Jul. 12, 2011
7977737 Semiconductor device having additional capacitance to inherent gate-drain or inherent drain-source capacitance Jul. 12, 2011
7977180 Methods for fabricating stressed MOS devices Jul. 12, 2011
7973363 IGBT semiconductor device Jul. 5, 2011
7973362 Semiconductor component and method for producing it Jul. 5, 2011
7968942 Semiconductor apparatus Jun. 28, 2011
7968941 Semiconductor device Jun. 28, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7964915 Semiconductor device having a DMOS structure Jun. 21, 2011
7964911 Semiconductor element and electrical apparatus Jun. 21, 2011
7960787 Configuration of trenched semiconductor power device to reduce masked process Jun. 14, 2011
7960786 Breakdown voltages of ultra-high voltage devices by forming tunnels Jun. 14, 2011
7952144 Integration of a sense FET into a discrete power MOSFET May. 31, 2011
7952143 Semiconductor device having IGBT and diode May. 31, 2011
7948032 Power MOS transistor device and layout May. 24, 2011
7944035 Double sided semiconduction device with edge contact and package therefor May. 17, 2011
7944003 Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory May. 17, 2011
7943994 Integrated PMOS transistor and Schottky diode May. 17, 2011
7939897 Method of forming a low resistance semiconductor contact and structure therefor May. 10, 2011
7939887 Active semiconductor component with a reduced surface area May. 10, 2011
7939885 Semiconductor device and method of manufacturing a semiconductor device May. 10, 2011
7936015 Semiconductor device having trenches filled with a semiconductor having an impurity concentration gradient May. 3, 2011
7936014 Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation May. 3, 2011
7936013 Charge balance techniques for power devices May. 3, 2011
7936010 Power semiconductor having a lightly doped drift and buffer layer May. 3, 2011
7936008 Structure and method for forming accumulation-mode field effect transistor with improved current capability May. 3, 2011
7935998 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same May. 3, 2011
7932577 Circuit device and method of forming a circuit device having a reduced peak current density Apr. 26, 2011
7929321 Depletion mode trench MOSFET for improved efficiency of DC/DC converter applications Apr. 19, 2011
7928517 High frequency transistor layout for low source drain capacitance Apr. 19, 2011
7923778 Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device Apr. 12, 2011
7915678 Snapback capable NLDMOS, DMOS and extended voltage NMOS devices Mar. 29, 2011
7915675 IGBT having one or more stacked zones formed within a second layer of the IGBT Mar. 29, 2011
7915671 Semiconductor device having super junction structure Mar. 29, 2011
7915155 Double trench for isolation of semiconductor devices Mar. 29, 2011
7910992 Vertical MOSFET with through-body via for gate Mar. 22, 2011
7910991 Dual gate lateral diffused MOS transistor Mar. 22, 2011
7906810 LDMOS device for ESD protection circuit Mar. 15, 2011
7902656 Hybrid integrated circuit device, and method for fabricating the same, and electronic device Mar. 8, 2011
7898031 Semiconductor device with tapered trenches and impurity concentration gradients Mar. 1, 2011
7898030 High-voltage NMOS-transistor and associated production method Mar. 1, 2011
7898024 Semiconductor device and method for manufacturing the same Mar. 1, 2011
7897997 Trench IGBT with trench gates underneath contact areas of protection diodes Mar. 1, 2011
7893491 Semiconductor superjunction structure Feb. 22, 2011
7893489 Semiconductor device having vertical MOSFET Feb. 22, 2011
7893457 Bipolar mosfet devices and methods for their use Feb. 22, 2011
7892924 Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device Feb. 22, 2011
7888712 Semiconductor device and method for manufacturing same Feb. 15, 2011











 
 
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