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Class Information
Number: 257/341
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > Plural sections connected in parallel (e.g., power mosfet)
Description: Subject matter wherein the graded channel doping short channel IGFET has more than one section and a plurality of those sections are connected electrically in parallel (e.g., to form a power MOSFET).










Sub-classes under this class:

Class Number Class Name Patents
257/342 With means to reduce on resistance 555


Patents under this class:

Patent Number Title Of Patent Date Issued
8089094 Semiconductor device Jan. 3, 2012
8084816 Semiconductor module Dec. 27, 2011
8084815 Superjunction semiconductor device Dec. 27, 2011
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8080847 Low on resistance CMOS "wave" transistor for integrated circuit applications Dec. 20, 2011
8080846 Semiconductor device having improved breakdown voltage and method of manufacturing the same Dec. 20, 2011
8076724 Transistor structure having an active region and a dielectric platform region Dec. 13, 2011
8076719 Semiconductor device structures and related processes Dec. 13, 2011
8072027 3D channel architecture for semiconductor devices Dec. 6, 2011
8072013 Trench polysilicon diode Dec. 6, 2011
8067287 Asymmetric segmented channel transistors Nov. 29, 2011
8063443 Hybrid-mode LDMOS Nov. 22, 2011
8063419 Integrated circuit having compensation component Nov. 22, 2011
8058688 Semiconductor device Nov. 15, 2011
8058682 Semiconductor device Nov. 15, 2011
8053834 Inverted-trench grounded-source FET structure using conductive substrates, with highly doped substrates Nov. 8, 2011
8049276 Reduced process sensitivity of electrode-semiconductor rectifiers Nov. 1, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011
RE42864 Rugged and fast power MOSFET and IGBT Oct. 25, 2011
8044463 Method of manufacturing a trench transistor having a heavy body region Oct. 25, 2011
8044462 Process for manufacturing a power device on a semiconductor substrate and corresponding device Oct. 25, 2011
8039931 Power semiconductor component having a topmost metallization layer Oct. 18, 2011
8039898 Process for manufacturing a charge-balance power diode and an edge-termination structure for a charge-balance semiconductor power device Oct. 18, 2011
8039897 Lateral MOSFET with substrate drain connection Oct. 18, 2011
8030706 Power semiconductor device Oct. 4, 2011
8030702 Trenched MOSFET with guard ring and channel stop Oct. 4, 2011
8026550 Integrated circuits and interconnect structure for integrated circuits Sep. 27, 2011
8022471 Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures Sep. 20, 2011
8022470 Semiconductor device with a trench gate structure and method for the production thereof Sep. 20, 2011
8018008 Semiconductor device including a plurality of chips and method of manufacturing semiconductor device Sep. 13, 2011
8013391 Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture Sep. 6, 2011
8013360 Semiconductor device having a junction of P type pillar region and N type pillar region Sep. 6, 2011
8008747 High power and high temperature semiconductor power devices protected by non-uniform ballasted sources Aug. 30, 2011
8008720 Transistor structure having a conductive layer formed contiguous in a single deposition Aug. 30, 2011
8008714 Semiconductor device including a MOSFET and a Schottky junction Aug. 30, 2011
8004049 Power semiconductor device Aug. 23, 2011
8004040 Semiconductor device and its manufacturing method Aug. 23, 2011
7999316 Semiconductor device and method for manufacturing the same Aug. 16, 2011
7999312 Insulated gate-type semiconductor device having a low concentration diffusion region Aug. 16, 2011
7994584 Semiconductor device having non-silicide region in which no silicide is formed on diffusion layer Aug. 9, 2011
7994571 Semiconductor device Aug. 9, 2011
7994567 Semiconductor device and a method of manufacturing the same Aug. 9, 2011
7994005 High-mobility trench MOSFETs Aug. 9, 2011
7989890 Lateral power MOSFET with high breakdown voltage and low on-resistance Aug. 2, 2011
7989887 Trench MOSFET with trenched floating gates as termination Aug. 2, 2011
7989852 Integrated circuits and interconnect structure for integrated circuits Aug. 2, 2011
7986005 Short circuit limiting in power semiconductor devices Jul. 26, 2011
7986004 Semiconductor device and method of manufacture thereof Jul. 26, 2011
7982265 Trenched shield gate power semiconductor devices and methods of manufacture Jul. 19, 2011
7982224 Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration Jul. 19, 2011











 
 
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