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Class Information
Number: 257/341
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > Plural sections connected in parallel (e.g., power mosfet)
Description: Subject matter wherein the graded channel doping short channel IGFET has more than one section and a plurality of those sections are connected electrically in parallel (e.g., to form a power MOSFET).










Sub-classes under this class:

Class Number Class Name Patents
257/342 With means to reduce on resistance 555


Patents under this class:
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Patent Number Title Of Patent Date Issued
6798025 Insulated gate bipolar transistor Sep. 28, 2004
6791143 Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through Sep. 14, 2004
6787848 Vertical type power mosfet having trenched gate structure Sep. 7, 2004
6784465 Vertical power component manufacturing method Aug. 31, 2004
6784486 Vertical power devices having retrograded-doped transition regions therein Aug. 31, 2004
6784488 Trench-gate semiconductor devices and the manufacture thereof Aug. 31, 2004
6784489 Method of operating a vertical DMOS transistor with schottky diode body structure Aug. 31, 2004
6781194 Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein Aug. 24, 2004
6781195 Semiconductor bidirectional switching device and method Aug. 24, 2004
6781197 Trench-type MOSFET having a reduced device pitch and on-resistance Aug. 24, 2004
6781198 High-voltage vertical transistor with a multi-layered extended drain structure Aug. 24, 2004
6781200 Insulated gate semiconductor device for realizing low gate capacity and a low short-circuit current Aug. 24, 2004
6781203 MOSFET with reduced threshold voltage and on resistance and process for its manufacture Aug. 24, 2004
6777746 Field effect transistor and application device thereof Aug. 17, 2004
6777747 Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability Aug. 17, 2004
6773972 Memory cell with transistors having relatively high threshold voltages in response to selective gate doping Aug. 10, 2004
6770935 Array of transistors with low voltage collector protection Aug. 3, 2004
6768169 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage Jul. 27, 2004
6768170 Superjunction device with improved avalanche capability and breakdown voltage Jul. 27, 2004
6768180 Superjunction LDMOST using an insulator substrate for power integrated circuits Jul. 27, 2004
6765292 Contact structure for semiconductor device Jul. 20, 2004
6762455 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component Jul. 13, 2004
6759684 SiC semiconductor device Jul. 6, 2004
6756259 Gate insulating structure for power devices, and related manufacturing process Jun. 29, 2004
6756636 Lateral super-junction semiconductor device Jun. 29, 2004
6753574 Semiconductor device and method for fabricating the same Jun. 22, 2004
6750508 Power semiconductor switching element provided with buried electrode Jun. 15, 2004
6750512 MOS semiconductor device having inactive zone with alternating thickness silicon oxide layer located between a semiconductor region and a conductive layer Jun. 15, 2004
6747300 H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing Jun. 8, 2004
6747312 Rad hard MOSFET with graded body diode junction and reduced on resistance Jun. 8, 2004
6747315 Semiconductor device having MOS field-effect transistor Jun. 8, 2004
6743703 Power diode having improved on resistance and breakdown voltage Jun. 1, 2004
6740930 Lateral MOS power transistor May. 25, 2004
6740931 Semiconductor device May. 25, 2004
6740940 Semiconductor memory devices having dummy active regions May. 25, 2004
6737705 Insulated gate semiconductor device May. 18, 2004
6734496 Semiconductor device May. 11, 2004
6734497 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device May. 11, 2004
6730963 Minimum sized cellular MOS-gated device geometry May. 4, 2004
6724040 Semiconductor device Apr. 20, 2004
6724042 Super-junction semiconductor device Apr. 20, 2004
6724043 Bipolar MOSFET device Apr. 20, 2004
6724044 MOSFET device having geometry that permits frequent body contact Apr. 20, 2004
6724079 Wire bond-less electronic component for use with an external circuit and method of manufacture Apr. 20, 2004
6720220 Method of fabricating semiconductor device Apr. 13, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6720618 Power MOSFET device Apr. 13, 2004
6713820 Semiconductor device Mar. 30, 2004
6710403 Dual trench power MOSFET Mar. 23, 2004
6710404 High voltage device and method for fabricating the same Mar. 23, 2004

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