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Class Information
Number: 257/341
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > Plural sections connected in parallel (e.g., power mosfet)
Description: Subject matter wherein the graded channel doping short channel IGFET has more than one section and a plurality of those sections are connected electrically in parallel (e.g., to form a power MOSFET).










Sub-classes under this class:

Class Number Class Name Patents
257/342 With means to reduce on resistance 555


Patents under this class:

Patent Number Title Of Patent Date Issued
8710557 MOS transistor having combined-source structure with low power consumption and method for fabricating the same Apr. 29, 2014
8704303 Dual channel trench LDMOS transistors and transistors integrated therewith Apr. 22, 2014
8704300 Semiconductor device and fabricating method thereof Apr. 22, 2014
8704297 Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge Apr. 22, 2014
8704295 Schottky and MOSFET+Schottky structures, devices, and methods Apr. 22, 2014
8692323 Semiconductor device with peripheral base region connected to main electrode Apr. 8, 2014
8691684 Layout and pad floor plan of power transistor for good performance of SPU and STOG Apr. 8, 2014
8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof Apr. 8, 2014
8680613 Termination design for high voltage device Mar. 25, 2014
8680611 Field effect transistor and schottky diode structures Mar. 25, 2014
8680608 Power semiconductor device with a low on resistence Mar. 25, 2014
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8674440 Power device integration on a common substrate Mar. 18, 2014
8674439 Low loss SiC MOSFET Mar. 18, 2014
8674415 High frequency semiconductor switch Mar. 18, 2014
8673700 Superjunction structures for power devices and methods of manufacture Mar. 18, 2014
8669613 Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method Mar. 11, 2014
8669611 Apparatus and method for power MOS transistor Mar. 11, 2014
8659117 Lateral power diode with self-biasing electrode Feb. 25, 2014
8659082 Method for manufacturing a semiconductor device having super junction structure Feb. 25, 2014
8659076 Semiconductor device structures and related processes Feb. 25, 2014
8658503 Semiconductor device and method of fabricating the same Feb. 25, 2014
8653628 Power semiconductor device and method of manufacturing the same Feb. 18, 2014
8653601 Current control semiconductor element and control device using the same Feb. 18, 2014
8653565 Mixed mode multiple switch integration of multiple compound semiconductor FET devices Feb. 18, 2014
8653536 Method for manufacturing semiconductor substrate, and semiconductor device Feb. 18, 2014
8643102 Control device of semiconductor device Feb. 4, 2014
8643092 Shielded trench MOSFET with multiple trenched floating gates as termination Feb. 4, 2014
8642427 Semiconductor device and method for fabricating the same Feb. 4, 2014
8637940 Semiconductor device with self-charging field electrodes and compensation regions Jan. 28, 2014
8637370 Integration of trench MOS with low voltage integrated circuits Jan. 28, 2014
8633541 Diode isolated drain extended NMOS ESD cell Jan. 21, 2014
8629528 Semiconductor memory device and method for manufacturing the same Jan. 14, 2014
8629499 Vertical MOSFET device Jan. 14, 2014
8629498 Power semiconductor device and method for manufacturing the power semiconductor device Jan. 14, 2014
8624332 Vertical conduction power electronic device and corresponding realization method Jan. 7, 2014
8614480 Power MOSFET with integrated gate resistor and diode-connected MOSFET Dec. 24, 2013
8610210 Power semiconductor device and method for manufacturing same Dec. 17, 2013
8610209 Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the same Dec. 17, 2013
8610204 Semiconductor device Dec. 17, 2013
8610130 Monolithic high voltage switching devices Dec. 17, 2013
8604544 Semiconductor device Dec. 10, 2013
8598660 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage Dec. 3, 2013
8598658 High voltage LDMOS device Dec. 3, 2013
8598035 Semiconductor dice with backside trenches filled with elastic material for improved attachment, packages using the same, and methods of making the same Dec. 3, 2013
8592904 Semiconductor device including Schottky barrier diode Nov. 26, 2013
8592903 Bipolar semiconductor device and manufacturing method Nov. 26, 2013
8592274 LDMOS with accumulation enhancement implant Nov. 26, 2013
8587061 Power MOSFET device with self-aligned integrated Schottky diode Nov. 19, 2013
8587060 Semiconductor device and method for manufacturing the same Nov. 19, 2013











 
 
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