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Class Information
Number: 257/340
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode)
Description: Subject matter wherein the graded channel doping short channel IGFET has means (other than self-alignment of the gate electrode) (e.g., an shielding electrode) to decrease the capacitance of the gate electrode.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8680615 Customized shield plate for a field effect transistor Mar. 25, 2014
8664717 Semiconductor device with an oversized local contact as a Faraday shield Mar. 4, 2014
8643102 Control device of semiconductor device Feb. 4, 2014
8643103 Semiconductor device including gate contact region and protruding gate electrode Feb. 4, 2014
8637929 LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation film Jan. 28, 2014
8581341 Power MOSFET with embedded recessed field plate and methods of fabrication Nov. 12, 2013
8564047 Semiconductor power devices integrated with a trenched clamp diode Oct. 22, 2013
8552511 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8536579 Electronic device having spatially inverted thin film transistors Sep. 17, 2013
8502311 Semiconductor transistor comprising two electrically conductive shield elements Aug. 6, 2013
8487381 Protection element and semiconductor device having the protection element Jul. 16, 2013
8487318 Semiconductor device and manufacturing method thereof Jul. 16, 2013
8460976 Manufacturing method of SOI high-voltage power device Jun. 11, 2013
8410551 Checkerboarded high-voltage vertical transistor layout Apr. 2, 2013
8405146 Component arrangement including a MOS transistor having a field electrode Mar. 26, 2013
8377755 Method for fabricating SOI high voltage power chip with trenches Feb. 19, 2013
8378432 Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy Feb. 19, 2013
8362572 Lower parasitic capacitance FinFET Jan. 29, 2013
8350318 Method of forming an MOS transistor and structure therefor Jan. 8, 2013
8334567 LDMOS using a combination of enhanced dielectric stress layer and dummy gates Dec. 18, 2012
8319278 Power device structures and methods using empty space zones Nov. 27, 2012
8304329 Power device structures and methods Nov. 6, 2012
8304829 Trench-based power semiconductor devices with increased breakdown voltage characteristics Nov. 6, 2012
8299560 Electronic device including a buried insulating layer and a vertical conductive structure extending therethrough and a process of forming the same Oct. 30, 2012
8264040 Lateral power transistor and method for producing same Sep. 11, 2012
8253198 Devices for shielding a signal line over an active region Aug. 28, 2012
8242605 Semiconductor device and method of manufacturing the same Aug. 14, 2012
8159028 Metal high dielectric constant transistor with reverse-T gate Apr. 17, 2012
8159027 Semiconductor device Apr. 17, 2012
8154079 Semiconductor device and fabrication method of the semiconductor device Apr. 10, 2012
8154078 Semiconductor structure and fabrication method thereof Apr. 10, 2012
8134152 CMOS thin film transistor, method of fabricating the same and organic light emitting display device having laminated PMOS poly-silicon thin film transistor with a top gate configuration and a Mar. 13, 2012
8120107 Semiconductor device internally having insulated gate bipolar transistor Feb. 21, 2012
8080858 Semiconductor component having a space saving edge structure Dec. 20, 2011
8076724 Transistor structure having an active region and a dielectric platform region Dec. 13, 2011
8039915 Solid-state image sensor Oct. 18, 2011
8021984 Method for manufacturing semiconductor Sep. 20, 2011
8013391 Power semiconductor devices with trenched shielded split gate transistor and methods of manufacture Sep. 6, 2011
8008719 Transistor structure having dual shield layers Aug. 30, 2011
7981785 Method for manufacturing semiconductor device and plasma oxidation method Jul. 19, 2011
7932148 Processes for manufacturing MOSFET devices with excessive round-hole shielded gate trench (SGT) Apr. 26, 2011
7898029 Semiconductor device internally having insulated gate bipolar transistor Mar. 1, 2011
7871867 Semiconductor device and method of manufacturing the same Jan. 18, 2011
7868396 Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone Jan. 11, 2011
7863682 SIC semiconductor having junction barrier Schottky diode Jan. 4, 2011
7851883 Semiconductor device and method of manufacture thereof Dec. 14, 2010
7825467 Semiconductor component having a drift zone and a drift control zone Nov. 2, 2010
7824989 Method for reducing overlap capacitance in field effect transistors Nov. 2, 2010
7816733 SiC semiconductor having junction barrier schottky device Oct. 19, 2010
7785980 Method of manufacturing semiconductor device using alignment mark and mark hole Aug. 31, 2010

1 2 3 4

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