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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6707101 Integrated series schottky and FET to allow negative drain voltage Mar. 16, 2004
6703671 Insulated gate semiconductor device and method of manufacturing the same Mar. 9, 2004
6703665 Transistor Mar. 9, 2004
6703664 Power FET device Mar. 9, 2004
6700175 Vertical semiconductor device having alternating conductivity semiconductor regions Mar. 2, 2004
6700157 Semiconductor device Mar. 2, 2004
6696728 Super-junction semiconductor device Feb. 24, 2004
6696707 High voltage integrated switching devices on a bonded and trenched silicon substrate Feb. 24, 2004
6693305 Semiconductor device formed by cascade-connecting a plurality of diodes Feb. 17, 2004
6693331 Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation Feb. 17, 2004
6693340 Lateral semiconductor device Feb. 17, 2004
6683347 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Jan. 27, 2004
6674126 Semiconductor device Jan. 6, 2004
6674125 Semiconductor power component and a corresponding manufacturing method Jan. 6, 2004
6670658 Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same Dec. 30, 2003
6670685 Method of manufacturing and structure of semiconductor device with floating ring structure Dec. 30, 2003
6667515 High breakdown voltage semiconductor device Dec. 23, 2003
6664593 Field effect transistor structure and method of manufacture Dec. 16, 2003
6657256 Trench DMOS transistor having a zener diode for protection from electro-static discharge Dec. 2, 2003
6653691 Radio frequency (RF) power devices having faraday shield layers therein Nov. 25, 2003
6639277 High-voltage transistor with multi-layer conduction region Oct. 28, 2003
6633059 Semiconductor device having MOS transistor Oct. 14, 2003
6627948 Vertical layer type semiconductor device Sep. 30, 2003
6624472 Semiconductor device with voltage sustaining zone Sep. 23, 2003
6624469 Vertical MOS transistor having body region formed by inclined ion implantation Sep. 23, 2003
6624455 Semiconductor device and method of manufacturing the same including drain pinned along channel width Sep. 23, 2003
6621122 Termination structure for superjunction device Sep. 16, 2003
6621120 Semiconductor device Sep. 16, 2003
6617641 High voltage semiconductor device capable of increasing a switching speed Sep. 9, 2003
6617653 MISFET Sep. 9, 2003
6617642 Field effect transistor structure for driving inductive loads Sep. 9, 2003
6611021 Semiconductor device and the method of manufacturing the same Aug. 26, 2003
6608350 High voltage vertical conduction superjunction semiconductor device Aug. 19, 2003
6605842 Semiconductor device and a method of manufacturing the same Aug. 12, 2003
6593594 Silicon carbide n-channel power LMOSFET Jul. 15, 2003
6593621 LDMOS field effect transistor with improved ruggedness in narrow curved areas Jul. 15, 2003
6586801 Semiconductor device having breakdown voltage limiter regions Jul. 1, 2003
6586799 Semiconductor device and method of manufacturing same Jul. 1, 2003
6583453 Semiconductor device having a voltage-regulator device Jun. 24, 2003
6580125 Semiconductor device and method for fabricating the same Jun. 17, 2003
6573558 High-voltage vertical transistor with a multi-layered extended drain structure Jun. 3, 2003
6573562 Semiconductor component and method of operation Jun. 3, 2003
6566709 Semiconductor device May. 20, 2003
6563169 Semiconductor device with high withstand voltage and a drain layer having a highly conductive region connectable to a diffused source layer by an inverted layer May. 13, 2003
6559502 Semiconductor device May. 6, 2003
6552389 Offset-gate-type semiconductor device Apr. 22, 2003
6548864 High density MOS technology power device Apr. 15, 2003
6545316 MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same Apr. 8, 2003
6541817 Trench-gate semiconductor devices and their manufacture Apr. 1, 2003
6538279 High-side switch with depletion-mode device Mar. 25, 2003

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