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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6897526 Semiconductor device and process for producing the same May. 24, 2005
6894348 Semiconductor device May. 17, 2005
6894349 Lateral DMOS structure with lateral extension structure for reduced charge trapping in gate oxide May. 17, 2005
6894319 Semiconductor device May. 17, 2005
6891232 Semiconductor device having an injection substance to knock against oxygen and manufacturing method of the same May. 10, 2005
6882005 High-voltage vertical transistor with a multi-layered extended drain structure Apr. 19, 2005
6878992 Vertical-type power MOSFET with a gate formed in a trench Apr. 12, 2005
6873011 High voltage and low on-resistance LDMOS transistor having equalized capacitance Mar. 29, 2005
6873021 MOS transistors having higher drain current without reduced breakdown voltage Mar. 29, 2005
6869847 Semiconductor device manufacturing method thereof Mar. 22, 2005
6870218 Integrated circuit structure with improved LDMOS design Mar. 22, 2005
6870222 Device structure of RF LDMOS with trench type sinker Mar. 22, 2005
6867445 Semiconductor memory devices including different thickness dielectric layers for the cell transistors and refresh transistors thereof Mar. 15, 2005
6864533 MOS field effect transistor with reduced on-resistance Mar. 8, 2005
6855986 Termination structure for trench DMOS device and method of making the same Feb. 15, 2005
6855994 Multiple-thickness gate oxide formed by oxygen implantation Feb. 15, 2005
6853038 Semiconductor device and method for manufacturing the same Feb. 8, 2005
6853033 Power MOSFET having enhanced breakdown voltage Feb. 8, 2005
6847080 Semiconductor device with high and low breakdown voltage and its manufacturing method Jan. 25, 2005
6847058 Semiconductor device Jan. 25, 2005
6844593 Semiconductor device Jan. 18, 2005
6838777 Semiconductor device and method of manufacturing the same Jan. 4, 2005
6838729 Semiconductor component with enhanced avalanche ruggedness Jan. 4, 2005
6833585 High voltage lateral DMOS transistor having low on-resistance and high breakdown voltage Dec. 21, 2004
6828630 CMOS device on ultrathin SOI with a deposited raised source/drain, and a method of manufacture Dec. 7, 2004
6825530 Zero Threshold Voltage pFET and method of making same Nov. 30, 2004
6825565 Semiconductor device Nov. 30, 2004
6822297 Additional n-type LDD/pocket implant for improving short-channel NMOS ESD robustness Nov. 23, 2004
6784489 Method of operating a vertical DMOS transistor with schottky diode body structure Aug. 31, 2004
6777747 Thick buffer region design to improve IGBT self-clamped inductive switching (SCIS) energy density and device manufacturability Aug. 17, 2004
6773995 Double diffused MOS transistor and method for manufacturing same Aug. 10, 2004
6770951 P-type LDMOS device with buried layer to solve punch-through problems and process for its manufacture Aug. 3, 2004
6770931 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 3, 2004
6768148 Devices with active areas having increased ion concentrations adjacent to isolation structures Jul. 27, 2004
6768170 Superjunction device with improved avalanche capability and breakdown voltage Jul. 27, 2004
6768178 Semiconductor device Jul. 27, 2004
6768169 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage Jul. 27, 2004
6762456 Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices Jul. 13, 2004
6762468 Semiconductor device and method of manufacturing the same Jul. 13, 2004
6762455 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component Jul. 13, 2004
6762440 Semiconductor component and corresponding test method Jul. 13, 2004
6756259 Gate insulating structure for power devices, and related manufacturing process Jun. 29, 2004
6737704 Transistor and method of manufacturing the same May. 18, 2004
6734496 Semiconductor device May. 11, 2004
6724040 Semiconductor device Apr. 20, 2004
6724042 Super-junction semiconductor device Apr. 20, 2004
6724021 Semiconductor devices and their peripheral termination Apr. 20, 2004
6720615 Vertical-type MIS semiconductor device Apr. 13, 2004
6710404 High voltage device and method for fabricating the same Mar. 23, 2004
6710396 Self-aligned split-gate flash cell structure and its contactless flash memory arrays Mar. 23, 2004

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