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Browse by Category: Main > Physics
Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7190027 Semiconductor device having high withstand capacity and method for designing the same Mar. 13, 2007
7187033 Drain-extended MOS transistors with diode clamp and methods for making the same Mar. 6, 2007
7176538 High voltage MOSFET having doped buried layer Feb. 13, 2007
7176524 Semiconductor device having deep trench charge compensation regions and method Feb. 13, 2007
7170109 Heterojunction semiconductor device with element isolation structure Jan. 30, 2007
7166890 Superjunction device with improved ruggedness Jan. 23, 2007
7157772 Semiconductor device and method of fabricating the same Jan. 2, 2007
7145203 Graded-junction high-voltage MOSFET in standard logic CMOS Dec. 5, 2006
7129546 Electrostatic discharge protection device Oct. 31, 2006
7126191 Double-diffused semiconductor device Oct. 24, 2006
7126186 Compensation component and process for producing the component Oct. 24, 2006
7122860 Trench-gate semiconductor devices Oct. 17, 2006
7122861 Semiconductor device and manufacturing method thereof Oct. 17, 2006
7115946 MOS transistor having an offset region Oct. 3, 2006
7098506 Semiconductor device and method for fabricating the same Aug. 29, 2006
7091552 High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation Aug. 15, 2006
7091556 High voltage drain-extended transistor Aug. 15, 2006
7091533 Semiconductor component Aug. 15, 2006
7091557 Semiconductor component with increased dielectric strength and/or reduced on resistance Aug. 15, 2006
7087958 Termination structure of DMOS device Aug. 8, 2006
7071527 Semiconductor element and manufacturing method thereof Jul. 4, 2006
7071528 Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof Jul. 4, 2006
7067877 MIS-type semiconductor device Jun. 27, 2006
7061047 Semiconductor device having trench gate structure and manufacturing method thereof Jun. 13, 2006
7042046 Super-junction semiconductor device and method of manufacturing the same May. 9, 2006
7019379 Semiconductor device comprising voltage regulator element Mar. 28, 2006
7019363 MOS transistor with asymmetrical source/drain extensions Mar. 28, 2006
7008865 Method of manufacturing a semiconductor device having a high breakdown voltage and low on-resistance Mar. 7, 2006
7005703 Metal-oxide-semiconductor device having improved performance and reliability Feb. 28, 2006
7002205 Super-junction semiconductor device and method of manufacturing the same Feb. 21, 2006
7002210 Semiconductor device including a high-breakdown voltage MOS transistor Feb. 21, 2006
6998672 Memory cell Feb. 14, 2006
6989567 LDMOS transistor Jan. 24, 2006
6989566 High-voltage semiconductor device including a floating block Jan. 24, 2006
6972460 Semiconductor device and manufacturing method thereof Dec. 6, 2005
6960789 Layout of a thin film transistor and the forming method thereof Nov. 1, 2005
6958515 N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects Oct. 25, 2005
6949798 Semiconductor device Sep. 27, 2005
6943410 High power vertical semiconductor device Sep. 13, 2005
6936892 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Aug. 30, 2005
6924530 Double diffused MOS transistor and method for manufacturing same Aug. 2, 2005
6919598 LDMOS transistor with enhanced termination region for high breakdown voltage with low on-resistance Jul. 19, 2005
6917085 Semiconductor transistor using L-shaped spacer Jul. 12, 2005
6911692 Semiconductor device Jun. 28, 2005
6911696 LDMOS transistor Jun. 28, 2005
6911694 Semiconductor device and method for fabricating such device Jun. 28, 2005
6909143 Lateral double-diffused MOS transistor having multiple current paths for high breakdown voltage and low on-resistance Jun. 21, 2005
6903417 Power semiconductor device Jun. 7, 2005
6903418 Semiconductor device Jun. 7, 2005
6900523 Termination structure for MOSgated power devices May. 31, 2005

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