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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7595532 Semiconductor memory devices and methods of forming the same Sep. 29, 2009
7592684 Semiconductor device and method for manufacturing the same Sep. 22, 2009
7586148 Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches Sep. 8, 2009
7586151 Insulated gate semiconductor device Sep. 8, 2009
7576393 Semiconductor device and method of manufacturing the same Aug. 18, 2009
7573100 High voltage semiconductor device and method for fabricating the same Aug. 11, 2009
7538388 Semiconductor device with a super-junction May. 26, 2009
7535056 Semiconductor device having a low concentration layer formed outside a drift layer May. 19, 2009
7525150 High voltage double diffused drain MOS transistor with medium operation voltage Apr. 28, 2009
7521756 DMOS transistor with optimized periphery structure Apr. 21, 2009
7511340 Semiconductor devices having gate structures and contact pads that are lower than the gate structures Mar. 31, 2009
7485924 Lateral double-diffused field effect transistor and integrated circuit having same Feb. 3, 2009
7482205 Process for resurf diffusion for high voltage MOSFET Jan. 27, 2009
7482220 Semiconductor device having deep trench charge compensation regions and method Jan. 27, 2009
7482654 MOSgated power semiconductor device with source field electrode Jan. 27, 2009
7479679 Field effect transistor and application device thereof Jan. 20, 2009
7473966 Oxide-bypassed lateral high voltage structures and methods Jan. 6, 2009
7473965 Structure of a high breakdown voltage element for use in high power applications Jan. 6, 2009
7466006 Structure and method for RESURF diodes with a current diverter Dec. 16, 2008
7462541 Manufacturing method of semiconductor device Dec. 9, 2008
7449400 Method of forming an isolation film in a semiconductor device Nov. 11, 2008
7436025 Termination structures for super junction devices Oct. 14, 2008
7436041 Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier Oct. 14, 2008
7429774 Electrostatic discharge (ESD) protection MOS device and ESD circuitry thereof Sep. 30, 2008
7427795 Drain-extended MOS transistors and methods for making the same Sep. 23, 2008
7423319 LDPMOS structure with enhanced breakdown voltage Sep. 9, 2008
7420245 Semiconductor device and method of manufacturing the same Sep. 2, 2008
7414268 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities Aug. 19, 2008
7411248 Vertical unipolar component periphery Aug. 12, 2008
7378317 Superjunction power MOSFET May. 27, 2008
7372104 High voltage CMOS devices May. 13, 2008
7372111 Semiconductor device with improved breakdown voltage and high current capacity May. 13, 2008
7361955 High-voltage MOS device with dummy diffusion region Apr. 22, 2008
7348630 Semiconductor device for high frequency uses and manufacturing method of the same Mar. 25, 2008
7345340 Semiconductor integrated circuit and a semiconductor device Mar. 18, 2008
7335949 Semiconductor device and method of fabricating the same Feb. 26, 2008
7332756 Damascene gate structure with a resistive device Feb. 19, 2008
7332770 Semiconductor device Feb. 19, 2008
7304356 IGBT or like semiconductor device of high voltage-withstanding capability Dec. 4, 2007
7301203 Superjunction semiconductor device Nov. 27, 2007
7301202 Semiconductor device and method of manufacturing the same Nov. 27, 2007
7282764 Semiconductor device Oct. 16, 2007
7279747 Semiconductor device, and production method for manufacturing such semiconductor device Oct. 9, 2007
7253474 Quasi-vertical semiconductor component Aug. 7, 2007
7253486 Field plate transistor with reduced field plate resistance Aug. 7, 2007
7244975 High-voltage device structure Jul. 17, 2007
7224025 Isolated LDMOS IC technology May. 29, 2007
7217954 Silicon carbide semiconductor device and method for fabricating the same May. 15, 2007
7211846 Transistor having compensation zones enabling a low on-resistance and a high reverse voltage May. 1, 2007
7202529 Field effect transistor Apr. 10, 2007

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