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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
8207580 Power integrated circuit device with incorporated sense FET Jun. 26, 2012
8202775 Process of forming an electronic device including a trench and a conductive structure therein Jun. 19, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8193060 Method of manufacturing a semiconductor device Jun. 5, 2012
8193565 Multi-level lateral floating coupled capacitor transistor structures Jun. 5, 2012
8188539 Field-effect semiconductor device and method of forming the same May. 29, 2012
8188540 High breakdown voltage double-gate semiconductor device May. 29, 2012
8178910 Semiconductor device May. 15, 2012
8159001 Graded junction high voltage semiconductor device Apr. 17, 2012
8159011 Complementary metal oxide semiconductor (CMOS) image sensor with extended pixel dynamic range incorporating transfer gate with potential well Apr. 17, 2012
8154078 Semiconductor structure and fabrication method thereof Apr. 10, 2012
8134204 DEMOS transistors with STI and compensated well in drain Mar. 13, 2012
8129779 Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance Mar. 6, 2012
8129782 High-voltage transistor and method for its manufacture Mar. 6, 2012
8129783 Lateral power MOSFET with high breakdown voltage and low on-resistance Mar. 6, 2012
8129784 Semiconductor device Mar. 6, 2012
8125028 Semiconductor devices for high power application Feb. 28, 2012
8119487 Semiconductor device and method for fabricating the same Feb. 21, 2012
8115250 Semiconductor device and manufacturing method of the same Feb. 14, 2012
8115253 Ultra high voltage MOS transistor device Feb. 14, 2012
8110873 High voltage transistor Feb. 7, 2012
8106451 Multiple lateral RESURF LDMOST Jan. 31, 2012
8097919 Mesa termination structures for power semiconductor devices including mesa step buffers Jan. 17, 2012
8097930 Semiconductor devices with trench isolations Jan. 17, 2012
8076716 Electronic device including a trench and a conductive structure therein Dec. 13, 2011
8076736 Semiconductor device and method for manufacturing the same Dec. 13, 2011
8063419 Integrated circuit having compensation component Nov. 22, 2011
8063443 Hybrid-mode LDMOS Nov. 22, 2011
8053319 Method of forming a high voltage device Nov. 8, 2011
8049271 Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islands Nov. 1, 2011
8022480 Semiconductor device and method for manufacturing the same Sep. 20, 2011
8017996 Semiconductor device, and energy transmission device using the same Sep. 13, 2011
8004038 Suppression of hot-carrier effects using double well for thin gate oxide LDMOS embedded in HV process Aug. 23, 2011
8004039 Field effect transistor with trench-isolated drain Aug. 23, 2011
7994006 Manufacturing method of semiconductor device Aug. 9, 2011
7989889 Integrated lateral high-voltage metal oxide semiconductor field effect transistor Aug. 2, 2011
7986005 Short circuit limiting in power semiconductor devices Jul. 26, 2011
7982224 Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentration Jul. 19, 2011
7977744 Field effect transistor with trench filled with insulating material and strips of semi-insulating material along trench sidewalls Jul. 12, 2011
7973361 High breakdown voltage semiconductor device and fabrication method of the same Jul. 5, 2011
7973382 Semiconductor device Jul. 5, 2011
7960781 Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method Jun. 14, 2011
7944035 Double sided semiconduction device with edge contact and package therefor May. 17, 2011
7939881 Semiconductor device May. 10, 2011
7936010 Power semiconductor having a lightly doped drift and buffer layer May. 3, 2011
7936042 Field effect transistor containing a wide band gap semiconductor material in a drain May. 3, 2011
7915677 Lateral power MOSFET with high breakdown voltage and low on-resistance Mar. 29, 2011
7915676 Integrated circuit Mar. 29, 2011
7902017 Process of forming an electronic device including a trench and a conductive structure therein Mar. 8, 2011
7902601 Semiconductor device having deep trench charge compensation regions and method Mar. 8, 2011

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