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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
4633292 Semiconductor component with planar structure Dec. 30, 1986
4628341 Integrated circuit structure comprising CMOS transistors having high blocking voltage capability and method of fabrication of said structure Dec. 9, 1986
4626879 Lateral double-diffused MOS transistor devices suitable for source-follower applications Dec. 2, 1986
4609929 Conductivity-enhanced combined lateral MOS/bipolar transistor Sep. 2, 1986
4602266 High voltage guard ring with variable width shallow portion Jul. 22, 1986
4593302 Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide Jun. 3, 1986
4590509 MIS high-voltage element with high-resistivity gate and field-plate May. 20, 1986
4577208 Bidirectional power FET with integral avalanche protection Mar. 18, 1986
4571606 High density, high voltage power FET Feb. 18, 1986
4567502 Planar type semiconductor device with a high breakdown voltage Jan. 28, 1986
4422089 Semiconductor device having a reduced surface field strength Dec. 20, 1983
4409606 High breakdown voltage semiconductor device Oct. 11, 1983
4399449 Composite metal and polysilicon field plate structure for high voltage semiconductor devices Aug. 16, 1983
4376286 High power MOSFET with low on-resistance and high breakdown voltage Mar. 8, 1983
4366495 Vertical MOSFET with reduced turn-on resistance Dec. 28, 1982
4345265 MOS Power transistor with improved high-voltage capability Aug. 17, 1982
4308549 High voltage field effect transistor Dec. 29, 1981
4300150 Lateral double-diffused MOS transistor device Nov. 10, 1981
4296426 Process for producing an MOS-transistor and a transistor produced by this process Oct. 20, 1981
4290077 High voltage MOSFET with inter-device isolation structure Sep. 15, 1981
4290078 High voltage MOSFET without field plate structure Sep. 15, 1981
4288801 Monolithic HVMOSFET active switch array Sep. 8, 1981
4288803 High voltage MOSFET with doped ring structure Sep. 8, 1981
4270137 Field-effect devices May. 26, 1981
4247918 Electrically alterable nonvolatile memory Jan. 27, 1981
4161039 N-Channel storage FET Jul. 10, 1979
4153906 Integrated circuit using an insulated gate field effect transistor May. 8, 1979
4132998 Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate Jan. 2, 1979
4072975 Insulated gate field effect transistor Feb. 7, 1978
4058822 High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof Nov. 15, 1977
3936857 Insulated gate field effect transistor having high transconductance Feb. 3, 1976

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