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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5168331 Power metal-oxide-semiconductor field effect transistor Dec. 1, 1992
5162883 Increased voltage MOS semiconductor device Nov. 10, 1992
5144389 Insulated gate field effect transistor with high breakdown voltage Sep. 1, 1992
5136349 Closed cell transistor with built-in voltage clamp Aug. 4, 1992
5130767 Plural polygon source pattern for mosfet Jul. 14, 1992
5128730 Semiconductor device and a circuit suitable for use in an intelligent power switch Jul. 7, 1992
5124764 Symmetric vertical MOS transistor with improved high voltage operation Jun. 23, 1992
5108940 MOS transistor with a charge induced drain extension Apr. 28, 1992
5105243 Conductivity-modulation metal oxide field effect transistor with single gate structure Apr. 14, 1992
5089871 Increased voltage MOS semiconductor device Feb. 18, 1992
5089864 Insulated gate type semiconductor device Feb. 18, 1992
5072267 Complementary field effect transistor Dec. 10, 1991
5072266 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Dec. 10, 1991
5070377 Semiconductor device and method of manufacturing the same Dec. 3, 1991
5047813 Semiconductor device and method of manufacturing the same Sep. 10, 1991
5047820 Semi self-aligned high voltage P channel FET Sep. 10, 1991
5045903 Topographic pattern delineated power MOSFET with profile tailored recessed source Sep. 3, 1991
5043779 Metal oxide semiconductor device with well region Aug. 27, 1991
5031009 Conductivity modulation semiconductor with no negative resistance characteristics Jul. 9, 1991
5023678 High power MOSFET and integrated control circuit therefor for high-side switch application Jun. 11, 1991
5016066 Vertical power MOSFET having high withstand voltage and high switching speed May. 14, 1991
5008720 Semiconductor device with stepped well Apr. 16, 1991
4994904 MOSFET having drain voltage detection function Feb. 19, 1991
4969024 Metal-oxide-semiconductor device Nov. 6, 1990
4959699 High power MOSFET with low on-resistance and high breakdown voltage Sep. 25, 1990
4952991 Vertical field-effect transistor having a high breakdown voltage and a small on-resistance Aug. 28, 1990
4947232 High voltage MOS transistor Aug. 7, 1990
4931846 Vertical MOSFET having voltage regulator diode at shallower subsurface position Jun. 5, 1990
4929991 Rugged lateral DMOS transistor structure May. 29, 1990
4922327 Semiconductor LDMOS device with upper and lower passages May. 1, 1990
4890146 High voltage level shift semiconductor device Dec. 26, 1989
4866495 High power MOSFET and integrated control circuit therefor for high-side switch application Sep. 12, 1989
4803532 Vertical MOSFET having a proof structure against puncture due to breakdown Feb. 7, 1989
4777521 High voltage semiconductor devices Oct. 11, 1988
4774560 High voltage guard ring with variable width shallow portion Sep. 27, 1988
4766474 High voltage MOS transistor Aug. 23, 1988
4757362 High voltage MOS transistor Jul. 12, 1988
4754310 High voltage semiconductor device Jun. 28, 1988
4713681 Structure for high breakdown PN diode with relatively high surface doping Dec. 15, 1987
4707720 Semiconductor memory device Nov. 17, 1987
4705759 High power MOSFET with low on-resistance and high breakdown voltage Nov. 10, 1987
4686551 MOS transistor Aug. 11, 1987
4680853 Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide Jul. 21, 1987
4682205 Semiconductor device Jul. 21, 1987
4661838 High voltage semiconductor devices electrically isolated from an integrated circuit substrate Apr. 28, 1987
4656492 Insulated gate field effect transistor Apr. 7, 1987
4644386 Integrated circuit employing insulated gate electrostatic induction transistor Feb. 17, 1987
4642666 High power MOSFET with low on-resistance and high breakdown voltage Feb. 10, 1987
4642674 Field effect semiconductor device having improved voltage breakdown characteristics Feb. 10, 1987
4639761 Combined bipolar-field effect transistor resurf devices Jan. 27, 1987

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