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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
5523601 High-breakdown-voltage MOS transistor Jun. 4, 1996
5512769 High breakdown voltage semiconductor device and method of fabricating the same Apr. 30, 1996
5508547 LDMOS transistor with reduced projective area of source region Apr. 16, 1996
5506421 Power MOSFET in silicon carbide Apr. 9, 1996
5504360 Vertical type semiconductor device provided with an improved construction to greatly decrease device on-resistance without impairing breakdown Apr. 2, 1996
5495122 Insulated-gate semiconductor field effect transistor which operates with a low gate voltage and high drain and source voltages Feb. 27, 1996
5479037 Low threshold voltage epitaxial DMOS technology Dec. 26, 1995
5473180 Semiconductor device with an MOST provided with an extended drain region for high voltages Dec. 5, 1995
5463237 MOSFET device having depletion layer Oct. 31, 1995
5451805 VDMOS transistor with reduced projective area of source region Sep. 19, 1995
5434435 Trench gate lateral MOSFET Jul. 18, 1995
5432370 High withstand voltage M I S field effect transistor and semiconductor integrated circuit Jul. 11, 1995
5430324 High voltage transistor having edge termination utilizing trench technology Jul. 4, 1995
5430316 VDMOS transistor with improved breakdown characteristics Jul. 4, 1995
5426325 Metal crossover in high voltage IC with graduated doping control Jun. 20, 1995
5420450 Semiconductor device having stable breakdown voltage in wiring area May. 30, 1995
5408118 Vertical double diffused MOSFET having a low breakdown voltage and constituting a power semiconductor device Apr. 18, 1995
5408117 Semiconductor device and method of fabricating the same Apr. 18, 1995
5396097 Transistor with common base region Mar. 7, 1995
5391908 Lateral insulated gate field effect semiconductor Feb. 21, 1995
5386136 Lightly-doped drain MOSFET with improved breakdown characteristics Jan. 31, 1995
5382825 Spiral edge passivation structure for semiconductor devices Jan. 17, 1995
5381031 Semiconductor device with reduced high voltage termination area and high breakdown voltage Jan. 10, 1995
5378912 Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region Jan. 3, 1995
5357135 Dmost junction breakdown enhancement Oct. 18, 1994
5352914 Field-effect transistor with structure for suppressing hot-electron effects, and method of fabricating the transistor Oct. 4, 1994
5349223 High current high voltage vertical PMOS in ultra high voltage CMOS Sep. 20, 1994
5338961 High power MOSFET with low on-resistance and high breakdown voltage Aug. 16, 1994
5338965 High voltage structures with oxide isolated source and RESURF drift region in bulk silicon Aug. 16, 1994
5328859 Method of making high voltage PNP bipolar transistor in CMOS Jul. 12, 1994
5324971 Power semiconductor device having over voltage protection Jun. 28, 1994
5323041 High-breakdown-voltage semiconductor element Jun. 21, 1994
5313092 Semiconductor power device having walls of an inverted mesa shape to improve power handling capability May. 17, 1994
5311051 Field effect transistor with offset region May. 10, 1994
5304827 Performance lateral double-diffused MOS transistor Apr. 19, 1994
5294824 High voltage transistor having reduced on-resistance Mar. 15, 1994
5293056 Semiconductor device with high off-breakdown-voltage and low on resistance Mar. 8, 1994
5268586 Vertical power MOS device with increased ruggedness and method of fabrication Dec. 7, 1993
5264719 High voltage lateral semiconductor device Nov. 23, 1993
5258636 Narrow radius tips for high voltage semiconductor devices with interdigitated source and drain electrodes Nov. 2, 1993
5252848 Low on resistance field effect transistor Oct. 12, 1993
5250449 Vertical type semiconductor device and method for producing the same Oct. 5, 1993
5243211 Power FET with shielded channels Sep. 7, 1993
5243234 Dual gate LDMOSFET device for reducing on state resistance Sep. 7, 1993
5233215 Silicon carbide power MOSFET with floating field ring and floating field plate Aug. 3, 1993
5229633 High voltage lateral enhancement IGFET Jul. 20, 1993
5216275 Semiconductor power devices with alternating conductivity type high-voltage breakdown regions Jun. 1, 1993
5216272 High withstanding voltage MIS transistor Jun. 1, 1993
5191396 High power MOSFET with low on-resistance and high breakdown voltage Mar. 2, 1993
5170241 Metal insulator semiconductor transistor having guard region and semiconductor device having the same Dec. 8, 1992

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