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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6344379 Semiconductor device with an undulating base region and method therefor Feb. 5, 2002
6339243 High voltage device and method for fabricating the same Jan. 15, 2002
6337499 Semiconductor component Jan. 8, 2002
6326656 Lateral high-voltage transistor Dec. 4, 2001
6316808 T-Gate transistor with improved SOI body contact structure Nov. 13, 2001
6313508 Semiconductor device of high-voltage CMOS structure and method of fabricating same Nov. 6, 2001
6307224 Double diffused mosfet Oct. 23, 2001
6285056 Conductivity enhanced MOS-gated semiconductor devices Sep. 4, 2001
6281521 Silicon carbide horizontal channel buffered gate semiconductor devices Aug. 28, 2001
6262439 Silicon carbide semiconductor device Jul. 17, 2001
6252279 DMOS transistor having a high reliability and a method for fabricating the same Jun. 26, 2001
6249023 Gated semiconductor device Jun. 19, 2001
6246091 Lateral MOSFET having a barrier between the source/drain regions and the channel Jun. 12, 2001
6236084 Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor May. 22, 2001
6229180 MOS type semiconductor apparatus May. 8, 2001
6222231 Semiconductor device of high breakdown voltage using semiconductive film and its manufacturing method Apr. 24, 2001
6218709 Semiconductor device and semiconductor circuit using the same Apr. 17, 2001
6215138 Semiconductor device and its fabrication method Apr. 10, 2001
6207994 High-voltage transistor with multi-layer conduction region Mar. 27, 2001
6198129 Vertical type insulated gate transistor Mar. 6, 2001
6198115 IGBT with reduced forward voltage drop and reduced switching loss Mar. 6, 2001
6194761 VDMOS transistor protected against over-voltages between source and gate Feb. 27, 2001
6188106 MOSFET having a highly doped channel liner and a dopant seal to provide enhanced device properties Feb. 13, 2001
6180981 Termination structure for semiconductor devices and process for manufacture thereof Jan. 30, 2001
6177704 Semiconductor device containing a lateral MOS transistor Jan. 23, 2001
6172406 Breakdown drain extended NMOS Jan. 9, 2001
6168983 Method of making a high-voltage transistor with multiple lateral conduction layers Jan. 2, 2001
6166418 High-voltage SOI thin-film transistor Dec. 26, 2000
6160288 Vertical type misfet having improved pressure resistance Dec. 12, 2000
6160290 Reduced surface field device having an extended field plate and method for forming the same Dec. 12, 2000
6153910 Semiconductor device with nitrogen implanted channel region Nov. 28, 2000
6153916 MOS transistor with high output voltage endurance Nov. 28, 2000
6140678 Trench-gated power MOSFET with protective diode Oct. 31, 2000
6127709 Guard ring structure for semiconductor devices and process for manufacture thereof Oct. 3, 2000
6111291 MOS transistor with high voltage sustaining capability Aug. 29, 2000
6102528 Drive transistor for an ink jet printhead Aug. 15, 2000
6104060 Cost savings for manufacturing planar MOSFET devices achieved by implementing an improved device structure and fabrication process eliminating passivation layer and/or field plate Aug. 15, 2000
6100572 Amorphous silicon combined with resurf region for termination for MOSgated device Aug. 8, 2000
6097063 Semiconductor device having a plurality of parallel drift regions Aug. 1, 2000
6096606 Method of making a semiconductor device Aug. 1, 2000
6093948 MOS transistors having vertical current flow Jul. 25, 2000
6091109 Semiconductor device having different gate oxide thicknesses by implanting halogens in one region and nitrogen in the second region Jul. 18, 2000
6091657 Integrated circuit having protection of low voltage devices Jul. 18, 2000
6091108 Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage Jul. 18, 2000
6084268 Power MOSFET device having low on-resistance and method Jul. 4, 2000
6081007 Semiconductor device comprising MIS transistor with high concentration channel injection region Jun. 27, 2000
6078085 Semiconductor integrated circuit and layout apparatus in which guard-ring is interposed between input-output circuits Jun. 20, 2000
6072216 Vertical DMOS field effect transistor with conformal buried layer for reduced on-resistance Jun. 6, 2000
6069386 Semiconductor device May. 30, 2000
6064077 Integrated circuit transistor May. 16, 2000

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