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Class Information
Number: 257/339
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With means to increase breakdown voltage
Description: Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710571 Polarity switching member of dot inversion system Apr. 29, 2014
8710587 Lateral double diffused metal oxide semiconductor device and method of manufacturing the same Apr. 29, 2014
8704291 Semiconductor device and method for fabricating the same Apr. 22, 2014
8704300 Semiconductor device and fabricating method thereof Apr. 22, 2014
8704302 Power semiconductor devices and methods Apr. 22, 2014
8692318 Trench MOS structure and method for making the same Apr. 8, 2014
8686503 Lateral high-voltage transistor and associated method for manufacturing Apr. 1, 2014
8686500 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 1, 2014
8686499 Semiconductor device Apr. 1, 2014
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8680616 High side gate driver device Mar. 25, 2014
8680608 Power semiconductor device with a low on resistence Mar. 25, 2014
8674436 Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same Mar. 18, 2014
8674403 Lateral devices containing permanent charge Mar. 18, 2014
8669613 Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method Mar. 11, 2014
8664715 Isolated transistor Mar. 4, 2014
8659073 Semiconductor device Feb. 25, 2014
8648417 LDMOS transistors with improved ESD capability Feb. 11, 2014
8643101 High voltage metal oxide semiconductor device having a multi-segment isolation structure Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure Feb. 4, 2014
8637923 Transistor having recess channel and fabricating method thereof Jan. 28, 2014
8637929 LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation film Jan. 28, 2014
8629497 Semiconductor devices and methods of fabricating the same Jan. 14, 2014
8610209 Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the same Dec. 17, 2013
8598659 Single finger gate transistor Dec. 3, 2013
8592901 Metal oxide semiconductor field transistor and method of fabricating the same Nov. 26, 2013
8592894 Method of forming a power semiconductor device and power semiconductor device Nov. 26, 2013
8587057 Metal oxide semiconductor field transistor Nov. 19, 2013
8581340 Semiconductor device of which breakdown voltage is improved Nov. 12, 2013
8575691 Lateral-diffusion metal-oxide semiconductor device Nov. 5, 2013
8575693 Double diffused metal oxide semiconductor device Nov. 5, 2013
8575694 Insulated gate bipolar transistor structure having low substrate leakage Nov. 5, 2013
8575702 Semiconductor device and method for fabricating semiconductor device Nov. 5, 2013
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
RE44547 Semiconductor device having deep trench charge compensation regions and method Oct. 22, 2013
8558308 Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor Oct. 15, 2013
8557674 High voltage semiconductor device including field shaping layer and method of fabricating the same Oct. 15, 2013
8552495 Dummy gate for a high voltage transistor device Oct. 8, 2013
8546881 Semiconductor device Oct. 1, 2013
8546882 Terminal structure for superjunction device and method of manufacturing the same Oct. 1, 2013
8541839 Semiconductor component and method for producing it Sep. 24, 2013
8541848 High-voltage MOSFETs having current diversion region in substrate near fieldplate Sep. 24, 2013
8536641 Semiconductor device Sep. 17, 2013
8530969 Semiconductor device Sep. 10, 2013
8530966 Semiconductor device Sep. 10, 2013
8524548 DMOS Transistor with a cavity that lies below the drift region Sep. 3, 2013
8525259 Semiconductor device Sep. 3, 2013
8513735 Power semiconductor device Aug. 20, 2013
8513674 Semiconductor device and method of manufacturing the same Aug. 20, 2013

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