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Class Information
Number: 257/337
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > In integrated circuit structure
Description: Subject matter wherein the graded channel doping short channel IGFET is contained in a single monolithic chip with other active or passive solid-state electronic devices.

Sub-classes under this class:

Class Number Class Name Patents
257/338 With complementary field effect transistor 279

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8704292 Vertical capacitive depletion field effect transistor Apr. 22, 2014
8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow Apr. 22, 2014
8686502 Schottky diode integrated into LDMOS Apr. 1, 2014
8680616 High side gate driver device Mar. 25, 2014
8664716 Semiconductor device, method of manufacturing the same and power-supply device using the same Mar. 4, 2014
8664715 Isolated transistor Mar. 4, 2014
8648416 LDMOS sense transistor structure for current sensing at high voltage Feb. 11, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8643071 Integrated snubber in a single poly MOSFET Feb. 4, 2014
8637370 Integration of trench MOS with low voltage integrated circuits Jan. 28, 2014
8633541 Diode isolated drain extended NMOS ESD cell Jan. 21, 2014
8592902 Semiconductor structure that reduces the effects of gate cross diffusion and method of forming the structure Nov. 26, 2013
8587058 Lateral diffused metal-oxide-semiconductor device Nov. 19, 2013
8581344 Laterally diffused metal oxide semiconductor transistors Nov. 12, 2013
8575693 Double diffused metal oxide semiconductor device Nov. 5, 2013
8569836 Semiconductor device Oct. 29, 2013
8552585 MOS transistor device in common source configuration Oct. 8, 2013
8546880 Anti punch-through leakage current metal-oxide-semiconductor transistor and manufacturing method thereof Oct. 1, 2013
8546221 Voltage converter and systems including same Oct. 1, 2013
8541838 Monolithically-integrated dual surge protective device Sep. 24, 2013
8530965 Semiconductor device Sep. 10, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8513730 Semiconductor component with vertical structures having a high aspect ratio and method Aug. 20, 2013
8508052 Stacked power converter structure and method Aug. 13, 2013
8507986 Silicon-carbide MOSFET cell structure and method for forming same Aug. 13, 2013
8507981 Method of manufacturing NMOS transistor with low trigger voltage Aug. 13, 2013
8507984 Semiconductor device limiting electrical discharge of charge Aug. 13, 2013
8502308 Semiconductor device with a trench isolation and method of manufacturing trenches in a semiconductor body Aug. 6, 2013
8492834 Electrostatic discharge protection device and applications thereof Jul. 23, 2013
8492836 Power semiconductor device Jul. 23, 2013
8487376 High-voltage transistor architectures, processes of forming same, and systems containing same Jul. 16, 2013
8461647 Semiconductor device having multi-thickness gate dielectric Jun. 11, 2013
8450800 Semiconductor device May. 28, 2013
8445960 Self-aligned body fully isolated device May. 21, 2013
8441070 Semiconductor device and method of manufacturing semiconductor device May. 14, 2013
8426915 Power integrated circuit device with incorporated sense FET Apr. 23, 2013
8415747 Semiconductor device including diode Apr. 9, 2013
8390064 Semiconductor device having gate trenches and manufacturing method thereof Mar. 5, 2013
8373226 Semiconductor device including a Trench-Gate Fin-FET Feb. 12, 2013
8373227 Semiconductor device and method having trenches in a drain extension region Feb. 12, 2013
8373208 Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode Feb. 12, 2013
8368120 Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Feb. 5, 2013
8362556 Semiconductor device Jan. 29, 2013
8362555 Voltage converter and systems including same Jan. 29, 2013
8324684 Monolithic high-current and low-current transistors sharing high voltage drain Dec. 4, 2012
8319284 Laterally diffused metal-oxide-semiconductor device Nov. 27, 2012
8294210 High voltage channel diode Oct. 23, 2012
8274114 Semiconductor device having a modified shallow trench isolation (STI) region and a modified well region Sep. 25, 2012
8264037 Semiconductor device and method of manufacturing semiconductor device Sep. 11, 2012
8264038 Buried floating layer structure for improved breakdown Sep. 11, 2012

1 2 3 4 5 6 7

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