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Class Information
Number: 257/336
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With lightly doped portion of drain region adjacent channel (e.g., ldd structure)
Description: Subject matter wherein the graded channel doping short channel IGFET has a relatively light concentration of dopant in the portion of the drain region which lies adjacent to the current conducting channel.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615822 |
Diffused drain transistor |
Nov. 10, 2009 |
| 7615426 |
PMOS transistor with discontinuous CESL and method of fabrication |
Nov. 10, 2009 |
| 7608895 |
Modular CMOS analog integrated circuit and power technology |
Oct. 27, 2009 |
| 7605428 |
High-voltage depletion mode MOSFET |
Oct. 20, 2009 |
| 7602016 |
Semiconductor apparatus and method of manufacturing the same |
Oct. 13, 2009 |
| 7598568 |
Semiconductor apparatus and method of manufacturing the same |
Oct. 6, 2009 |
| 7579651 |
Semiconductor device |
Aug. 25, 2009 |
| 7576391 |
High-voltage lateral trench MOSFET |
Aug. 18, 2009 |
| 7573099 |
Semiconductor device layout and channeling implant process |
Aug. 11, 2009 |
| 7569884 |
LDMOS transistor |
Aug. 4, 2009 |
| 7560772 |
Semiconductor integrated circuit device and manufacturing method thereof |
Jul. 14, 2009 |
| 7550803 |
Vertical double-diffusion metal-oxide-semiconductor transistor device |
Jun. 23, 2009 |
| 7545003 |
Defect-free source/drain extensions for MOSFETS having germanium based channel regions |
Jun. 9, 2009 |
| 7544996 |
Methods of fabricating a semiconductor device having a metal gate pattern |
Jun. 9, 2009 |
| 7544995 |
Power converter employing a micromagnetic device |
Jun. 9, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7538387 |
Stack SiGe for short channel improvement |
May. 26, 2009 |
| 7535058 |
Lateral DMOS structure |
May. 19, 2009 |
| 7528442 |
Semiconductor device and manufacturing method thereof |
May. 5, 2009 |
| 7525150 |
High voltage double diffused drain MOS transistor with medium operation voltage |
Apr. 28, 2009 |
| 7521756 |
DMOS transistor with optimized periphery structure |
Apr. 21, 2009 |
| 7521758 |
DMOS device of small dimensions and manufacturing process thereof |
Apr. 21, 2009 |
| 7514758 |
Dual-oxide transistors for the improvement of reliability and off-state leakage |
Apr. 7, 2009 |
| 7511340 |
Semiconductor devices having gate structures and contact pads that are lower than the gate structures |
Mar. 31, 2009 |
| 7504692 |
High-voltage field-effect transistor |
Mar. 17, 2009 |
| 7489007 |
High-voltage lateral DMOS device |
Feb. 10, 2009 |
| 7485925 |
High voltage metal oxide semiconductor transistor and fabricating method thereof |
Feb. 3, 2009 |
| 7485923 |
SOI semiconductor device with improved halo region and manufacturing method of the same |
Feb. 3, 2009 |
| 7473964 |
Semiconductor device |
Jan. 6, 2009 |
| 7473976 |
Lateral power transistor with self-biasing electrodes |
Jan. 6, 2009 |
| 7473965 |
Structure of a high breakdown voltage element for use in high power applications |
Jan. 6, 2009 |
| 7465978 |
Field effect transistor with a high breakdown voltage and method of manufacturing the same |
Dec. 16, 2008 |
| 7456448 |
Semiconductor device and method for producing the same |
Nov. 25, 2008 |
| 7453120 |
Semiconductor structure |
Nov. 18, 2008 |
| 7446375 |
Quasi-vertical LDMOS device having closed cell layout |
Nov. 4, 2008 |
| 7439183 |
Method of manufacturing a semiconductor device, and a semiconductor substrate |
Oct. 21, 2008 |
| 7436024 |
Semiconductor device and method of manufacturing the same |
Oct. 14, 2008 |
| 7427795 |
Drain-extended MOS transistors and methods for making the same |
Sep. 23, 2008 |
| RE40486 |
Self-aligned non-volatile memory cell |
Sep. 9, 2008 |
| 7420247 |
Power LDMOS transistor |
Sep. 2, 2008 |
| 7417277 |
Semiconductor integrated circuit and method of manufacturing the same |
Aug. 26, 2008 |
| 7408234 |
Semiconductor device and method for manufacturing the same |
Aug. 5, 2008 |
| 7405450 |
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon |
Jul. 29, 2008 |
| 7405443 |
Dual gate lateral double-diffused MOSFET (LDMOS) transistor |
Jul. 29, 2008 |
| 7391080 |
LDMOS transistor device employing spacer structure gates |
Jun. 24, 2008 |
| 7381621 |
Methods of fabricating high voltage MOSFET having doped buried layer |
Jun. 3, 2008 |
| 7378708 |
Transistor having a protruded drain |
May. 27, 2008 |
| 7378323 |
Silicide process utilizing pre-amorphization implant and second spacer |
May. 27, 2008 |
| 7372105 |
Semiconductor device with power supply impurity region |
May. 13, 2008 |
| 7372104 |
High voltage CMOS devices |
May. 13, 2008 |
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