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Class Information
Number: 257/336
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) > With lightly doped portion of drain region adjacent channel (e.g., ldd structure)
Description: Subject matter wherein the graded channel doping short channel IGFET has a relatively light concentration of dopant in the portion of the drain region which lies adjacent to the current conducting channel.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709888 Hybrid CMOS nanowire mesh device and PDSOI device Apr. 29, 2014
8709900 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 29, 2014
8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow Apr. 22, 2014
8692324 Semiconductor devices having charge balanced structure Apr. 8, 2014
8686501 Semiconductor device with high voltage transistor Apr. 1, 2014
8686500 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 1, 2014
8686499 Semiconductor device Apr. 1, 2014
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8680616 High side gate driver device Mar. 25, 2014
8674403 Lateral devices containing permanent charge Mar. 18, 2014
8674438 Semiconductor devices having stressor regions and related fabrication methods Mar. 18, 2014
8674437 Semiconductor device and method for manufacturing semiconductor device Mar. 18, 2014
8664720 High voltage semiconductor devices Mar. 4, 2014
8659080 Semiconductor structure and manufacturing process thereof Feb. 25, 2014
8659081 Transistor with reduced channel length variation Feb. 25, 2014
8653594 Double diffused metal oxide semiconductor device and manufacturing method thereof Feb. 18, 2014
8648417 LDMOS transistors with improved ESD capability Feb. 11, 2014
8643099 Integrated lateral high voltage MOSFET Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8643107 Body-tied asymmetric N-type field effect transistor Feb. 4, 2014
8637929 LDMOS transistor having a gate electrode formed over thick and thin portions of a gate insulation film Jan. 28, 2014
8633540 Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same Jan. 21, 2014
8629502 MOSFET with recessed channel film and abrupt junctions Jan. 14, 2014
8614484 High voltage device with partial silicon germanium epi source/drain Dec. 24, 2013
8609490 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain Dec. 17, 2013
8610207 Semiconductor architecture having field-effect transistors especially suitable for analog applications Dec. 17, 2013
8610208 Semiconductor device Dec. 17, 2013
8598656 Method and apparatus of forming ESD protection device Dec. 3, 2013
8592274 LDMOS with accumulation enhancement implant Nov. 26, 2013
8587057 Metal oxide semiconductor field transistor Nov. 19, 2013
8587056 High-voltage metal-oxide-semiconductor device Nov. 19, 2013
8581340 Semiconductor device of which breakdown voltage is improved Nov. 12, 2013
8575691 Lateral-diffusion metal-oxide semiconductor device Nov. 5, 2013
8575702 Semiconductor device and method for fabricating semiconductor device Nov. 5, 2013
8569833 LDMOS device structure and manufacturing method of the same Oct. 29, 2013
8570455 Semiconductor device, semiconductor device manufacturing method, liquid crystal display device and electronic apparatus Oct. 29, 2013
8563377 Trench-based power semiconductor devices with increased breakdown voltage characteristics Oct. 22, 2013
8558307 Semiconductor device with diffused MOS transistor and manufacturing method of the same Oct. 15, 2013
8557674 High voltage semiconductor device including field shaping layer and method of fabricating the same Oct. 15, 2013
8551872 Low series resistance transistor structure on silicon on insulator layer Oct. 8, 2013
8546880 Anti punch-through leakage current metal-oxide-semiconductor transistor and manufacturing method thereof Oct. 1, 2013
8541296 Method of manufacturing dummy gates in gate last process Sep. 24, 2013
8536649 Method to reduce threshold voltage variability with through gate well implant Sep. 17, 2013
8525258 Method for controlling impurity density distribution in semiconductor device and semiconductor device made thereby Sep. 3, 2013
8525342 Dual-side interconnected CMOS for stacked integrated circuits Sep. 3, 2013
8513734 Switch mode converter employing dual gate MOS transistor Aug. 20, 2013
8502309 Semiconductor device including field effect transistor for use as a high-speed switching device and a power device Aug. 6, 2013
8497180 Transistor with boot shaped source/drain regions Jul. 30, 2013
8482065 MOS transistor with a reduced on-resistance and area product Jul. 9, 2013

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