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Class Information
Number: 257/335
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor)
Description: Subject matter wherein the short channel IGFET"s active channel region has a graded dopant concentration decreasing with distance from source region, e.g., double diffused device or a DMOS transistor.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7626233 |
LDMOS device |
Dec. 1, 2009 |
| 7622741 |
Semiconductor device and method for manufacturing same |
Nov. 24, 2009 |
| 7615822 |
Diffused drain transistor |
Nov. 10, 2009 |
| 7608868 |
Semiconductor device and method for manufacturing the same |
Oct. 27, 2009 |
| 7605428 |
High-voltage depletion mode MOSFET |
Oct. 20, 2009 |
| 7605425 |
Power MOS device |
Oct. 20, 2009 |
| 7602017 |
Short channel LV, MV, and HV CMOS devices |
Oct. 13, 2009 |
| 7602037 |
High voltage semiconductor devices and methods for fabricating the same |
Oct. 13, 2009 |
| 7598549 |
Semiconductor device having a silicon layer in a gate electrode |
Oct. 6, 2009 |
| 7595530 |
Power semiconductor device with epitaxially-filled trenches |
Sep. 29, 2009 |
| 7592668 |
Charge balance techniques for power devices |
Sep. 22, 2009 |
| 7586150 |
Semiconductor devices with local recess channel transistors and methods of manufacturing the same |
Sep. 8, 2009 |
| 7579651 |
Semiconductor device |
Aug. 25, 2009 |
| 7576392 |
Semiconductor device including gate wiring, main electrodes and connecting plate connected onto said main electrodes |
Aug. 18, 2009 |
| 7576390 |
System for vertical DMOS with slots |
Aug. 18, 2009 |
| 7576391 |
High-voltage lateral trench MOSFET |
Aug. 18, 2009 |
| 7573098 |
Transistors fabricated using a reduced cost CMOS process |
Aug. 11, 2009 |
| 7573095 |
Memory cells with improved program/erase windows |
Aug. 11, 2009 |
| 7569884 |
LDMOS transistor |
Aug. 4, 2009 |
| 7566914 |
Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits |
Jul. 28, 2009 |
| 7566933 |
Trench-gate semiconductor device and manufacturing method of trench-gate semiconductor device |
Jul. 28, 2009 |
| 7560771 |
Insulated gate transistor |
Jul. 14, 2009 |
| 7557410 |
Dynamic random access memory device |
Jul. 7, 2009 |
| 7554157 |
Lateral SOI component having a reduced on resistance |
Jun. 30, 2009 |
| 7550803 |
Vertical double-diffusion metal-oxide-semiconductor transistor device |
Jun. 23, 2009 |
| 7544995 |
Power converter employing a micromagnetic device |
Jun. 9, 2009 |
| 7541653 |
Mask ROM devices of semiconductor devices and method of forming the same |
Jun. 2, 2009 |
| 7535056 |
Semiconductor device having a low concentration layer formed outside a drift layer |
May. 19, 2009 |
| 7535058 |
Lateral DMOS structure |
May. 19, 2009 |
| 7535057 |
DMOS transistor with a poly-filled deep trench for improved performance |
May. 19, 2009 |
| 7531876 |
Semiconductor device having power semiconductor elements |
May. 12, 2009 |
| 7525150 |
High voltage double diffused drain MOS transistor with medium operation voltage |
Apr. 28, 2009 |
| 7525151 |
Vertical DMOS device in integrated circuit |
Apr. 28, 2009 |
| 7525153 |
Laterally double-diffused metal oxide semiconductor transistor and method for fabricating the same |
Apr. 28, 2009 |
| 7521758 |
DMOS device of small dimensions and manufacturing process thereof |
Apr. 21, 2009 |
| 7521757 |
Semiconductor device with back surface electrode including a stress relaxation film |
Apr. 21, 2009 |
| 7521756 |
DMOS transistor with optimized periphery structure |
Apr. 21, 2009 |
| 7511340 |
Semiconductor devices having gate structures and contact pads that are lower than the gate structures |
Mar. 31, 2009 |
| 7489007 |
High-voltage lateral DMOS device |
Feb. 10, 2009 |
| 7485920 |
Process to create buried heavy metal at selected depth |
Feb. 3, 2009 |
| 7485924 |
Lateral double-diffused field effect transistor and integrated circuit having same |
Feb. 3, 2009 |
| 7485923 |
SOI semiconductor device with improved halo region and manufacturing method of the same |
Feb. 3, 2009 |
| 7485922 |
Isolation structure for semiconductor device including double diffusion isolation region forming PN junction with neighboring wells and isolation region beneath |
Feb. 3, 2009 |
| 7476934 |
Structure for an LDMOS transistor and fabrication method thereof |
Jan. 13, 2009 |
| 7473978 |
Semiconductor device and method of manufacturing the same |
Jan. 6, 2009 |
| 7473625 |
LDMOS device and method of fabrication |
Jan. 6, 2009 |
| 7470952 |
Power IGBT with increased robustness |
Dec. 30, 2008 |
| 7470955 |
Technique for improving negative potential immunity of an integrated circuit |
Dec. 30, 2008 |
| 7468537 |
Drain extended PMOS transistors and methods for making the same |
Dec. 23, 2008 |
| 7462892 |
Semiconductor device |
Dec. 9, 2008 |
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