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Class Information
Number: 257/335
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor)
Description: Subject matter wherein the short channel IGFET"s active channel region has a graded dopant concentration decreasing with distance from source region, e.g., double diffused device or a DMOS transistor.










Sub-classes under this class:

Class Number Class Name Patents
257/343 All contacts on same surface (e.g., lateral structure) 689
257/337 In integrated circuit structure 346
257/341 Plural sections connected in parallel (e.g., power mosfet) 1,475
257/336 With lightly doped portion of drain region adjacent channel (e.g., ldd structure) 951
257/340 With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode) 197
257/339 With means to increase breakdown voltage 731


Patents under this class:

Patent Number Title Of Patent Date Issued
8710587 Lateral double diffused metal oxide semiconductor device and method of manufacturing the same Apr. 29, 2014
8704303 Dual channel trench LDMOS transistors and transistors integrated therewith Apr. 22, 2014
8704301 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow Apr. 22, 2014
8704300 Semiconductor device and fabricating method thereof Apr. 22, 2014
8704291 Semiconductor device and method for fabricating the same Apr. 22, 2014
8692328 Semiconductor device Apr. 8, 2014
8692323 Semiconductor device with peripheral base region connected to main electrode Apr. 8, 2014
8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof Apr. 8, 2014
8686500 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 1, 2014
8686499 Semiconductor device Apr. 1, 2014
8686498 Lateral double diffused MOS device and method for manufacturing the same Apr. 1, 2014
8683414 Semiconductor integrated circuit device with independent power domains Mar. 25, 2014
8680615 Customized shield plate for a field effect transistor Mar. 25, 2014
8680613 Termination design for high voltage device Mar. 25, 2014
8674436 Lateral double diffusion metal-oxide semiconductor device and method for manufacturing the same Mar. 18, 2014
8674435 Semiconductor integrated circuit device and method of manufacturing the same Mar. 18, 2014
8674403 Lateral devices containing permanent charge Mar. 18, 2014
8673712 Power transistor with high voltage counter implant Mar. 18, 2014
8664720 High voltage semiconductor devices Mar. 4, 2014
8664715 Isolated transistor Mar. 4, 2014
8664714 Power MOSFET Mar. 4, 2014
8659117 Lateral power diode with self-biasing electrode Feb. 25, 2014
8659080 Semiconductor structure and manufacturing process thereof Feb. 25, 2014
8648416 LDMOS sense transistor structure for current sensing at high voltage Feb. 11, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8643101 High voltage metal oxide semiconductor device having a multi-segment isolation structure Feb. 4, 2014
8643099 Integrated lateral high voltage MOSFET Feb. 4, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8642427 Semiconductor device and method for fabricating the same Feb. 4, 2014
8637928 Semiconductor device Jan. 28, 2014
8637916 Semiconductor device with mini SONOS cell Jan. 28, 2014
8629496 Semiconductor device and method for manufacturing the same Jan. 14, 2014
8629495 High frequency field-effect transistor Jan. 14, 2014
8629493 Semiconductor device Jan. 14, 2014
8610220 Semiconductor device with self-aligned interconnects Dec. 17, 2013
8610207 Semiconductor architecture having field-effect transistors especially suitable for analog applications Dec. 17, 2013
8610206 Split-gate lateral diffused metal oxide semiconductor device Dec. 17, 2013
8610200 Nitride read only memory device with buried diffusion spacers and method for making the same Dec. 17, 2013
8609490 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain Dec. 17, 2013
8604544 Semiconductor device Dec. 10, 2013
8598660 Stress enhanced LDMOS transistor to minimize on-resistance and maintain high breakdown voltage Dec. 3, 2013
8598659 Single finger gate transistor Dec. 3, 2013
8592905 High-voltage semiconductor device Nov. 26, 2013
8592901 Metal oxide semiconductor field transistor and method of fabricating the same Nov. 26, 2013
8592900 Drain extended CMOS with counter-doped drain extension Nov. 26, 2013
8592274 LDMOS with accumulation enhancement implant Nov. 26, 2013
8587060 Semiconductor device and method for manufacturing the same Nov. 19, 2013
8587055 Integrated circuit using a superjunction semiconductor device Nov. 19, 2013
8581339 Structure of NPN-BJT for improving punch through between collector and emitter Nov. 12, 2013
8581338 Lateral-diffused metal oxide semiconductor device (LDMOS) and fabrication method thereof Nov. 12, 2013











 
 
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