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Class Information
Number: 257/333
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Gate controls vertical charge flow portion of channel (e.g., vmos device) > Gate electrode in groove > With thick insulator to reduce gate capacitance in non-channel areas (e.g., thick oxide over source or drain region)
Description: Subject matter wherein the device with a gate electrode in a groove is provided with a thick insulator material layer to reduce gate capacitance in non-channel areas, e.g., a thick layer of oxide located over the source or drain region.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8704298 MOS diode with termination structure and method for manufacturing the same Apr. 22, 2014
8680611 Field effect transistor and schottky diode structures Mar. 25, 2014
8680613 Termination design for high voltage device Mar. 25, 2014
8669613 Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method Mar. 11, 2014
8653592 Isolation structure, non-volatile memory having the same, and method of fabricating the same Feb. 18, 2014
8648412 Trench power field effect transistor device and method Feb. 11, 2014
8637923 Transistor having recess channel and fabricating method thereof Jan. 28, 2014
8614475 Void free interlayer dielectric Dec. 24, 2013
8610205 Inter-poly dielectric in a shielded gate MOSFET device Dec. 17, 2013
8598654 MOSFET device with thick trench bottom oxide Dec. 3, 2013
8592895 Field effect transistor with source, heavy body region and shielded gate Nov. 26, 2013
8564048 Contact barrier modulation of field effect transistors Oct. 22, 2013
8558305 Method for manufacturing a power device being integrated on a semiconductor substrate, in particular having a field plate vertical structure and corresponding device Oct. 15, 2013
8530963 Power semiconductor device and method therefor Sep. 10, 2013
8519473 Vertical transistor component Aug. 27, 2013
8502287 Semiconductor devices with enclosed void cavities Aug. 6, 2013
8502281 Integrated circuit having vertical compensation component Aug. 6, 2013
8497550 Multi-level DRAM cell using CHC technology Jul. 30, 2013
8487368 Low voltage power MOSFET device and process for its manufacture Jul. 16, 2013
8487373 SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same Jul. 16, 2013
8455343 Semiconductor device with buried gate and method for fabricating the same Jun. 4, 2013
8431450 Methods and apparatus for LDMOS transistors Apr. 30, 2013
8431457 Method for fabricating a shielded gate trench MOS with improved source pickup layout Apr. 30, 2013
8431989 Shielded gate trench (SGT) MOSFET devices and manufacturing processes Apr. 30, 2013
8426912 Semiconductor device and method of manufacturing semiconductor device Apr. 23, 2013
8420511 Transistor and method for forming the same Apr. 16, 2013
8384152 Semiconductor device having trench gate VDMOSFET and method of manufacturing the same Feb. 26, 2013
8372716 Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer Feb. 12, 2013
8357971 Trench gate MOSFET and method of manufacturing the same Jan. 22, 2013
8319266 Etch stop layer for memory cell reliability improvement Nov. 27, 2012
8299524 Semiconductor device with voltage sustaining region formed along a trench Oct. 30, 2012
8294238 Nonvolatile semiconductor memory device with reduced size of peripheral circuit area Oct. 23, 2012
8283709 Semiconductor structure Oct. 9, 2012
8278705 Field effect transistor with gated and non-gated trenches Oct. 2, 2012
8269282 Semiconductor component and method for producing a semiconductor component Sep. 18, 2012
8264035 Avalanche capability improvement in power semiconductor devices Sep. 11, 2012
8247868 Power MOSFET and fabricating method thereof Aug. 21, 2012
8232166 Method for fabricating semiconductor device with recess gate Jul. 31, 2012
8227855 Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same Jul. 24, 2012
8222684 Method of manufacturing a semiconductor integrated circuit using a selective disposal spacer technique and semiconductor integrated circuit manufactured thereby Jul. 17, 2012
8217422 Semiconductor devices with gate-source ESD diode and gate-drain clamp diode Jul. 10, 2012
8198154 Method of forming bottom-drain LDMOS power MOSFET structure having a top drain strap Jun. 12, 2012
8193579 Trench type semiconductor device and fabrication method for the same Jun. 5, 2012
8183629 Stacked trench metal-oxide-semiconductor field effect transistor device May. 22, 2012
8173510 Lateral drain-extended MOSFET having channel along sidewall of drain extension dielectric May. 8, 2012
8164114 Semiconductor devices with gate-source ESD diode and gate-drain clamp diode Apr. 24, 2012
8148233 Semiconductor power device having a top-side drain using a sinker trench Apr. 3, 2012
8148789 Non-volatile semiconductor storage device and method of manufacturing the same Apr. 3, 2012
8129779 Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance Mar. 6, 2012
8115252 Elimination of gate oxide weak spot in deep trench Feb. 14, 2012

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