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Class Information
Number: 257/329
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Gate controls vertical charge flow portion of channel (e.g., vmos device)
Description: Subject matter wherein the short channel IGFET has a channel portion in which charge flows in a substantially vertical direction and wherein the charge flowing therein is controlled by the gate electrode.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7619281 |
Semiconductor device having buried gate line and method of fabricating the same |
Nov. 17, 2009 |
| 7619279 |
Three dimensional flash cell |
Nov. 17, 2009 |
| 7608888 |
Field effect transistor |
Oct. 27, 2009 |
| 7608890 |
Semiconductor device and method of manufacturing semiconductor device |
Oct. 27, 2009 |
| 7605426 |
Power semiconductor device |
Oct. 20, 2009 |
| 7598566 |
Trench gate field effect devices |
Oct. 6, 2009 |
| 7595241 |
Method for fabricating silicon carbide vertical MOSFET devices |
Sep. 29, 2009 |
| 7592230 |
Trench power device and method |
Sep. 22, 2009 |
| 7586151 |
Insulated gate semiconductor device |
Sep. 8, 2009 |
| 7586149 |
Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same |
Sep. 8, 2009 |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7582939 |
Semiconductor diode, electronic component and voltage source inverter |
Sep. 1, 2009 |
| 7579648 |
Semiconductor device having a channel pattern and method of manufacturing the same |
Aug. 25, 2009 |
| 7576393 |
Semiconductor device and method of manufacturing the same |
Aug. 18, 2009 |
| 7566931 |
Monolithically-integrated buck converter |
Jul. 28, 2009 |
| 7564088 |
High-density single transistor vertical memory gain cell |
Jul. 21, 2009 |
| 7564096 |
Scalable power field effect transistor with improved heavy body structure and method of manufacture |
Jul. 21, 2009 |
| 7564095 |
Semiconductor device and method for manufacturing the same |
Jul. 21, 2009 |
| 7557414 |
Semiconductor device and method for manufacturing the same |
Jul. 7, 2009 |
| 7557006 |
Methods of forming field effect transistors |
Jul. 7, 2009 |
| 7554155 |
Power semiconductor device and method of manufacturing the same |
Jun. 30, 2009 |
| 7554137 |
Power semiconductor component with charge compensation structure and method for the fabrication thereof |
Jun. 30, 2009 |
| 7550805 |
Stress-controlled dielectric integrated circuit |
Jun. 23, 2009 |
| 7544570 |
Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device |
Jun. 9, 2009 |
| 7541640 |
Vertical field-effect transistor and method of forming the same |
Jun. 2, 2009 |
| 7541641 |
Gate structure in a trench region of a semiconductor device and method for manufacturing the same |
Jun. 2, 2009 |
| RE40712 |
High-breakdown-voltage semiconductor apparatus |
May. 19, 2009 |
| 7531871 |
Power semiconductor switching element |
May. 12, 2009 |
| 7531872 |
High voltage transistor and method for fabricating the same |
May. 12, 2009 |
| 7528439 |
Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
May. 5, 2009 |
| 7528022 |
Method of forming fin field effect transistor using damascene process |
May. 5, 2009 |
| 7528440 |
Vertical gain cell |
May. 5, 2009 |
| RE40705 |
High-breakdown-voltage semiconductor apparatus |
May. 5, 2009 |
| 7521752 |
Fin-type channel transistor and method of manufacturing the same |
Apr. 21, 2009 |
| 7521753 |
Integrated circuit devices having active regions with expanded effective widths |
Apr. 21, 2009 |
| 7518182 |
DRAM layout with vertical FETs and method of formation |
Apr. 14, 2009 |
| 7518197 |
Power semiconductor device |
Apr. 14, 2009 |
| 7514324 |
Selective epitaxy in vertical integrated circuit |
Apr. 7, 2009 |
| 7514743 |
DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping |
Apr. 7, 2009 |
| 7510955 |
Method of fabricating multi-fin field effect transistor |
Mar. 31, 2009 |
| 7504690 |
Power semiconductor devices |
Mar. 17, 2009 |
| 7504691 |
Power trench MOSFETs having SiGe/Si channel structure |
Mar. 17, 2009 |
| 7498614 |
Voltage sustaining layer with opposite-doped islands for semiconductor power devices |
Mar. 3, 2009 |
| 7492003 |
Superjunction power semiconductor device |
Feb. 17, 2009 |
| 7488651 |
Method of making vertical transistor structures having vertical-surrounding-gates with self-aligned features |
Feb. 10, 2009 |
| 7488650 |
Method of forming trench-gate electrode for FinFET device |
Feb. 10, 2009 |
| 7479678 |
Semiconductor element and method of manufacturing the same |
Jan. 20, 2009 |
| 7476893 |
Vertical organic field effect transistor |
Jan. 13, 2009 |
| 7476920 |
6F.sup.2 access transistor arrangement and semiconductor memory device |
Jan. 13, 2009 |
| 7470951 |
Hybrid-FET and its application as SRAM |
Dec. 30, 2008 |
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