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Class Information
Number: 257/328
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor > Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)
Description: Subject matter wherein the short channel IGFET has a vertical current channel structure or the short channel IGFETs active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused, DMOS transistor) and wherein means are provided to protect the short channel against overvoltages (e.g., a gate insulator protection diode).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622769 |
Isolation trench |
Nov. 24, 2009 |
| 7619281 |
Semiconductor device having buried gate line and method of fabricating the same |
Nov. 17, 2009 |
| 7615449 |
Semiconductor device having a recess channel transistor |
Nov. 10, 2009 |
| 7615812 |
Field effect semiconductor diodes and processing techniques |
Nov. 10, 2009 |
| 7612405 |
Fabrication of FinFETs with multiple fin heights |
Nov. 3, 2009 |
| 7612431 |
Trench polysilicon diode |
Nov. 3, 2009 |
| 7608888 |
Field effect transistor |
Oct. 27, 2009 |
| 7605423 |
Semiconductor device |
Oct. 20, 2009 |
| 7602014 |
Superjunction power MOSFET |
Oct. 13, 2009 |
| 7602013 |
Semiconductor device with recessed channel |
Oct. 13, 2009 |
| 7602022 |
Surge voltage protection diode with controlled p-n junction density gradients |
Oct. 13, 2009 |
| 7598538 |
ESD protecting circuit and manufacturing method thereof |
Oct. 6, 2009 |
| 7598567 |
Power switching semiconductor devices including rectifying junction-shunts |
Oct. 6, 2009 |
| 7595241 |
Method for fabricating silicon carbide vertical MOSFET devices |
Sep. 29, 2009 |
| 7589379 |
Power semiconductor and method of fabrication |
Sep. 15, 2009 |
| 7586130 |
Vertical field effect transistor using linear structure as a channel region and method for fabricating the same |
Sep. 8, 2009 |
| 7585705 |
Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop |
Sep. 8, 2009 |
| 7586149 |
Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same |
Sep. 8, 2009 |
| 7586148 |
Power semiconductor device having a voltage sustaining region that includes doped columns formed by terraced trenches |
Sep. 8, 2009 |
| 7582519 |
Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction |
Sep. 1, 2009 |
| 7582939 |
Semiconductor diode, electronic component and voltage source inverter |
Sep. 1, 2009 |
| 7582931 |
Recessed gate electrodes having covered layer interfaces and methods of forming the same |
Sep. 1, 2009 |
| 7576387 |
MOS transistor and method of manufacturing a MOS transistor |
Aug. 18, 2009 |
| 7576393 |
Semiconductor device and method of manufacturing the same |
Aug. 18, 2009 |
| 7569876 |
DRAM arrays, vertical transistor structures, and methods of forming transistor structures and DRAM arrays |
Aug. 4, 2009 |
| 7566931 |
Monolithically-integrated buck converter |
Jul. 28, 2009 |
| 7566914 |
Devices with adjustable dual-polarity trigger- and holding-voltage/current for high level of electrostatic discharge protection in sub-micron mixed signal CMOS/BiCMOS integrated circuits |
Jul. 28, 2009 |
| 7566619 |
Methods of forming integrated circuit devices having field effect transistors of different types in different device regions |
Jul. 28, 2009 |
| 7564096 |
Scalable power field effect transistor with improved heavy body structure and method of manufacture |
Jul. 21, 2009 |
| 7560771 |
Insulated gate transistor |
Jul. 14, 2009 |
| 7554155 |
Power semiconductor device and method of manufacturing the same |
Jun. 30, 2009 |
| 7554137 |
Power semiconductor component with charge compensation structure and method for the fabrication thereof |
Jun. 30, 2009 |
| 7553740 |
Structure and method for forming a minimum pitch trench-gate FET with heavy body region |
Jun. 30, 2009 |
| 7544570 |
Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device |
Jun. 9, 2009 |
| 7541641 |
Gate structure in a trench region of a semiconductor device and method for manufacturing the same |
Jun. 2, 2009 |
| 7538388 |
Semiconductor device with a super-junction |
May. 26, 2009 |
| 7531871 |
Power semiconductor switching element |
May. 12, 2009 |
| 7531876 |
Semiconductor device having power semiconductor elements |
May. 12, 2009 |
| 7528439 |
Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
May. 5, 2009 |
| 7525141 |
Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines |
Apr. 28, 2009 |
| 7521713 |
Semiconductor device having electrostatic discharge element |
Apr. 21, 2009 |
| 7514743 |
DMOS transistor with floating poly-filled trench for improved performance through 3-D field shaping |
Apr. 7, 2009 |
| 7504690 |
Power semiconductor devices |
Mar. 17, 2009 |
| 7504691 |
Power trench MOSFETs having SiGe/Si channel structure |
Mar. 17, 2009 |
| 7498619 |
Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process |
Mar. 3, 2009 |
| 7494875 |
Gate etch process for a high-voltage FET |
Feb. 24, 2009 |
| 7492003 |
Superjunction power semiconductor device |
Feb. 17, 2009 |
| 7489011 |
Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics |
Feb. 10, 2009 |
| 7489002 |
Memory having a vertical transistor |
Feb. 10, 2009 |
| 7485920 |
Process to create buried heavy metal at selected depth |
Feb. 3, 2009 |
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