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Class Information
Number: 257/327
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor
Description: Subject matter wherein the field effect device is an insulated gate field effect transistor with a short channel (i.e., one wherein the length of the channel is sufficiently short that the threshold voltage of the transistor depends on the length of the channel, or where the channel is specified to be less than 2 micrometers in length).

Sub-classes under this class:

Class Number	Class Name	Patents
257/335	Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor)	658
257/329	Gate controls vertical charge flow portion of channel (e.g., vmos device)	687
257/346	Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate)	288
257/328	Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode)	727
257/344	With lightly doped portion of drain region adjacent channel (e.g., ldd structure)	970
257/345	With means to prevent sub-surface currents, or with non-uniform channel doping	340

Patents under this class:

1 2 3 4 5 6 7 8 9 10

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