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Class Information
Number: 257/327
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Short channel insulated gate field effect transistor
Description: Subject matter wherein the field effect device is an insulated gate field effect transistor with a short channel (i.e., one wherein the length of the channel is sufficiently short that the threshold voltage of the transistor depends on the length of the channel, or where the channel is specified to be less than 2 micrometers in length).










Sub-classes under this class:

Class Number Class Name Patents
257/335 Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, dmos transistor) 1,011
257/329 Gate controls vertical charge flow portion of channel (e.g., vmos device) 1,180
257/346 Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate) 362
257/328 Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode) 1,236
257/344 With lightly doped portion of drain region adjacent channel (e.g., ldd structure) 1,144
257/345 With means to prevent sub-surface currents, or with non-uniform channel doping 407


Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8710557 MOS transistor having combined-source structure with low power consumption and method for fabricating the same Apr. 29, 2014
8704290 Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element Apr. 22, 2014
8704332 Metal oxide semiconductor field effect transistor (MOSFET) gate termination Apr. 22, 2014
8692315 Semiconductor device and fabrication method thereof Apr. 8, 2014
8692316 Isolation structures for FinFET semiconductor devices Apr. 8, 2014
8680606 Power semiconductor device Mar. 25, 2014
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8674433 Semiconductor process Mar. 18, 2014
8664652 Semiconductor device and method for manufacturing the same Mar. 4, 2014
8659069 Gate structures Feb. 25, 2014
8659077 Multi-layer work function metal replacement gate Feb. 25, 2014
8648410 Electronic device including a gate electrode and a gate tap Feb. 11, 2014
8641926 Water dispersible polythiophenes made with polymeric acid colloids Feb. 4, 2014
8643100 Field effect transistor having multiple effective oxide thicknesses and corresponding multiple channel doping profiles Feb. 4, 2014
8637375 Method of manufacturing a tunnel transistor and IC comprising the same Jan. 28, 2014
8610204 Semiconductor device Dec. 17, 2013
8610221 Low mismatch semiconductor device and method for fabricating same Dec. 17, 2013
8598664 Field effect transistor (FET) and method of forming the FET without damaging the wafer surface Dec. 3, 2013
8581311 Semiconductor device Nov. 12, 2013
8575708 Structure of field effect transistor with fin structure Nov. 5, 2013
8564029 Transistor and method for forming the same Oct. 22, 2013
8564062 High voltage MOS array with gate contact on extended drain region Oct. 22, 2013
8558306 Semiconductor device and method of manufacturing the same Oct. 15, 2013
8546873 Integrated circuit and method of fabrication thereof Oct. 1, 2013
8536643 Semiconductor device Sep. 17, 2013
8536645 Trench MOSFET and method for fabricating same Sep. 17, 2013
8536651 Multi-gate transistor having sidewall contacts Sep. 17, 2013
8530317 Corner rounding to improve metal fill in replacement gate process Sep. 10, 2013
8530960 Semiconductor device Sep. 10, 2013
8525250 SONOS memory device with reduced short-channel effects Sep. 3, 2013
8519486 Semiconductor device having a plurality of phosphorus-doped silicon carbide layers Aug. 27, 2013
8507986 Silicon-carbide MOSFET cell structure and method for forming same Aug. 13, 2013
8502283 Strained fully depleted silicon on insulator semiconductor device Aug. 6, 2013
8502301 Semiconductor device and method for fabricating the same Aug. 6, 2013
8502303 Semiconductor device Aug. 6, 2013
8492830 Multiple channel fin-FET and its manufacturing method Jul. 23, 2013
8487356 Graphene device and method of manufacturing the same Jul. 16, 2013
8487355 Structure and method for compact long-channel FETs Jul. 16, 2013
8482045 Semiconductor memory device having vertical channel transistor and method for fabricating the same Jul. 9, 2013
8482058 Semiconductor device including a power MISFET Jul. 9, 2013
8482063 High voltage semiconductor device Jul. 9, 2013
8482064 Termination for superjunction VDMOSFET Jul. 9, 2013
8476697 Short-channel silicon carbide power MOSFET Jul. 2, 2013
8471329 Tunnel FET and methods for forming the same Jun. 25, 2013
8470656 Semiconductor device and method of manufacturing the same Jun. 25, 2013
8466512 Semiconductor device and production method thereof Jun. 18, 2013
8435846 Semiconductor devices with raised extensions May. 7, 2013
8431985 Layout and process of forming contact plugs Apr. 30, 2013
8431990 Semiconductor device Apr. 30, 2013
8420490 High-performance semiconductor device and method of manufacturing the same Apr. 16, 2013

1 2 3 4 5 6 7 8 9 10 11 12 13 14










 
 
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