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Class Information
Number: 257/325
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > Multiple insulator layers (e.g., mnos structure) > Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions)
Description: Subject matter wherein at least one layer has a non-homogeneous composition (e.g., a layer which varies in composition along at least one dimension thereof, or has inclusions of foreign material therein).










Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
4672408 Non-volatile semiconductor memory device Jun. 9, 1987
4665417 Non-volatile dynamic random access memory cell May. 12, 1987
4656729 Dual electron injection structure and process with self-limiting oxidation barrier Apr. 14, 1987
4535349 Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing Aug. 13, 1985
RE31734 Moderate field hole and electron injection from one interface of MIM or MIS structures Nov. 13, 1984
4481527 High density MNOS transistor with ion implant into nitride layer adjacent gate electrode Nov. 6, 1984
4458407 Process for fabricating semi-conductive oxide between two poly silicon gate electrodes Jul. 10, 1984
4380057 Electrically alterable double dense memory Apr. 12, 1983
RE31083 Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure Nov. 16, 1982
4305086 MNOS Memory device and method of manufacture Dec. 8, 1981
4253106 Gate injected floating gate memory device Feb. 24, 1981
4217601 Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure Aug. 12, 1980
4156249 Solid state tunable capacitor May. 22, 1979
4151537 Gate electrode for MNOS semiconductor memory device Apr. 24, 1979
4143393 High field capacitor structure employing a carrier trapping region Mar. 6, 1979
4104675 Moderate field hole and electron injection from one interface of MIM or MIS structures Aug. 1, 1978
4027320 Static storage element and process for the production thereof May. 31, 1977
3945031 Charge effects in doped silicon dioxide Mar. 16, 1976

1 2 3 4 5 6 7










 
 
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