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Class Information
Number: 257/323
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > With floating gate electrode > With means to facilitate light erasure
Description: Subject matter including means to make erasure of the electrical charge content of the device by light easier (e.g., by providing an ultraviolet light window layer over the floating gate electrode to reduce absorption of erasing light).

Patents under this class:
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Patent Number Title Of Patent Date Issued
8659069 Gate structures Feb. 25, 2014
8644759 Offset cancellation for DC isolated nodes Feb. 4, 2014
8497546 Back-side-illuminated image sensors with bulk-charge-modulated image sensor pixels Jul. 30, 2013
8232591 Illuminating efficiency-increasable and light-erasable memory Jul. 31, 2012
8115249 Nonvolatile semiconductor memory device and method for manufacturing the same Feb. 14, 2012
7977226 Flash memory device and method of fabricating the same Jul. 12, 2011
7910949 Power semiconductor device Mar. 22, 2011
7838406 SONOS-NAND device having a storage region separated between cells Nov. 23, 2010
7820491 Light erasable memory and method therefor Oct. 26, 2010
7791129 Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density Sep. 7, 2010
7763931 Nonvolatile semiconductor memory device and method of manufacturing the same Jul. 27, 2010
7745870 Programming and erasing structure for a floating gate memory cell and method of making Jun. 29, 2010
7671402 Solid-state imaging devices Mar. 2, 2010
7586145 EEPROM flash memory device with jagged edge floating gate Sep. 8, 2009
7544992 Illuminating efficiency-increasable and light-erasable embedded memory structure Jun. 9, 2009
7538383 Two-bit memory cell having conductive charge storage segments and method for fabricating same May. 26, 2009
7449742 Memory device with active layer of dendrimeric material Nov. 11, 2008
7394127 Non-volatile memory device having a charge storage oxide layer and operation thereof Jul. 1, 2008
7391078 Non-volatile memory and manufacturing and operating method thereof Jun. 24, 2008
7382015 Semiconductor device including an element isolation portion having a recess Jun. 3, 2008
7352028 Solid-state imaging devices Apr. 1, 2008
7253468 Flash memory and methods of fabricating the same Aug. 7, 2007
7208794 High-density NROM-FINFET Apr. 24, 2007
7202524 Nonvolatile memory device and method of manufacturing the same Apr. 10, 2007
7187043 Memory function body, particle forming method therefor and, memory device, semiconductor device, and electronic equipment having the memory function body Mar. 6, 2007
7183662 Memory devices with memory cell transistors having gate sidewell spacers with different dielectric properties Feb. 27, 2007
7157742 Integrated circuit device Jan. 2, 2007
7148529 Semiconductor package Dec. 12, 2006
7122857 Multi-level (4state/2-bit) stacked gate flash memory cell Oct. 17, 2006
7119393 Transistor having fully-depleted junctions to reduce capacitance and increase radiation immunity in an integrated circuit Oct. 10, 2006
7115939 Floating gate transistor with horizontal gate layers stacked next to vertical body Oct. 3, 2006
7078749 Memory structure having tunable interlayer dielectric and method for fabricating same Jul. 18, 2006
7018898 Non-volatile two transistor semiconductor memory cell and method for producing the same Mar. 28, 2006
6946702 Resistance random access memory Sep. 20, 2005
6870216 Stack gate with tip vertical memory and method for fabricating the same Mar. 22, 2005
6815762 Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines Nov. 9, 2004
6803319 Process for optically erasing charge buildup during fabrication of an integrated circuit Oct. 12, 2004
6762068 Transistor with variable electron affinity gate and methods of fabrication and use Jul. 13, 2004
6713812 Non-volatile memory device having an anti-punch through (APT) region Mar. 30, 2004
6635943 Method and system for reducing charge gain and charge loss in interlayer dielectric formation Oct. 21, 2003
6566706 Semiconductor array of floating gate memory cells and strap regions May. 20, 2003
6548856 Vertical stacked gate flash memory device Apr. 15, 2003
6545310 Non-volatile memory with a serial transistor structure with isolated well and method of operation Apr. 8, 2003
6509600 Flash memory cell Jan. 21, 2003
6437398 One-time UV-programmable non-volatile semiconductor memory and method of programming such a semiconductor memory Aug. 20, 2002
6384450 Semiconductor memory device and method of manufacturing the same May. 7, 2002
6326660 Method to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flash Dec. 4, 2001
6323514 Container structure for floating gate memory device and method for forming same Nov. 27, 2001
6313502 Semiconductor device comprising a non-volatile memory which is erasable by means of UV irradiation Nov. 6, 2001
6242782 Circuit for providing isolation of integrated circuit active areas Jun. 5, 2001

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