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Class Information
Number: 257/321
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Field effect device > Having insulated electrode (e.g., mosfet, mos diode) > Variable threshold (e.g., floating gate memory device) > With floating gate electrode > With additional contacted control electrode > With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling
Description: Subject matter including a thin insulator region for charging of discharging a floating electrode by means of quantum mechanical tunneling of charge carriers.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6157057 Flash memory cell Dec. 5, 2000
6153906 Flash memory Nov. 28, 2000
6147379 Semiconductor device and method for fabricating the same Nov. 14, 2000
6143607 Method for forming flash memory of ETOX-cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current Nov. 7, 2000
6144062 Semiconductor device having thin electrode layer adjacent gate insulator and method of manufacture Nov. 7, 2000
6144063 Ultra-thin oxide for semiconductors Nov. 7, 2000
6144064 Split-gate EEPROM device having floating gate with double polysilicon layer Nov. 7, 2000
6140181 Memory using insulator traps Oct. 31, 2000
6137133 Programmable non-volatile memory cell and method of forming a non-volatile memory cell Oct. 24, 2000
6137728 Nonvolatile reprogrammable interconnect cell with programmable buried source/drain in sense transistor Oct. 24, 2000
6133603 Memory device and memory array Oct. 17, 2000
6130452 Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication Oct. 10, 2000
6127698 High density/speed nonvolatile memories with a textured tunnel oxide and a high capacitive-coupling ratio Oct. 3, 2000
6124608 Non-volatile trench semiconductor device having a shallow drain region Sep. 26, 2000
6117756 Method of forming high density and low power flash memories with a high capacitive-coupling ratio Sep. 12, 2000
6114723 Flash memory cell using poly to poly tunneling for erase Sep. 5, 2000
6111288 Quantum tunneling effect device and semiconductor composite substrate Aug. 29, 2000
6104059 Non-volatile memory having a silicide film on memory control gates and peripheral circuit transistor gates Aug. 15, 2000
6100560 Nonvolatile cell Aug. 8, 2000
6097057 Memory cell for EEPROM devices, and corresponding fabricating process Aug. 1, 2000
6097059 Transistor, transistor array, method for manufacturing transistor array, and nonvolatile semiconductor memory Aug. 1, 2000
6093946 EEPROM cell with field-edgeless tunnel window using shallow trench isolation process Jul. 25, 2000
6090670 Highly efficient transistor for fast programming of flash memories Jul. 18, 2000
6091100 High density NAND structure nonvolatile memories Jul. 18, 2000
6091104 Flash memory cell with self-aligned gates and fabrication process Jul. 18, 2000
6087696 Stacked tunneling dielectric technology for improving data retention of EEPROM cell Jul. 11, 2000
6084262 Etox cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage current Jul. 4, 2000
6084265 High density shallow trench contactless nonvolitile memory Jul. 4, 2000
6084267 Design propagation delay measurement device Jul. 4, 2000
6078075 Semiconductor device with a programmable element having a P-type substrate and floating gate with a thin gate dielectric Jun. 20, 2000
6078076 Vertical channels in split-gate flash memory cell Jun. 20, 2000
6075267 Split-gate non-volatile semiconductor memory device Jun. 13, 2000
6066874 Flash memory cell with vertical channels, and source/drain bus lines May. 23, 2000
6066875 Method of fabricating split-gate source side injection flash EEPROM array May. 23, 2000
6060743 Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same May. 9, 2000
6057574 Contactless nonvolatile semiconductor memory device having buried bit lines surrounded by grooved insulators May. 2, 2000
6054735 Very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technologies Apr. 25, 2000
6051860 Nonvolatile semiconductor memory device and method for fabricating the same and semiconductor integrated circuit Apr. 18, 2000
6043124 Method for forming high density nonvolatile memories with high capacitive-coupling ratio Mar. 28, 2000
6043530 Flash EEPROM device employing polysilicon sidewall spacer as an erase gate Mar. 28, 2000
6040597 Isolation boundaries in flash memory cores Mar. 21, 2000
6037605 Semiconductor device and method of manufacturing the same Mar. 14, 2000
6034393 Nonvolatile semiconductor memory device using trench isolation and manufacturing method thereof Mar. 7, 2000
6025626 Nonvolatile memory cell Feb. 15, 2000
6025627 Alternate method and structure for improved floating gate tunneling devices Feb. 15, 2000
6017792 Process for fabricating a semiconductor device including a nonvolatile memory cell Jan. 25, 2000
6011288 Flash memory cell with vertical channels, and source/drain bus lines Jan. 4, 2000
6011289 Metal oxide stack for flash memory application Jan. 4, 2000
6008517 High density and low power flash memories with a high capacitive-coupling ratio Dec. 28, 1999
6005270 Semiconductor nonvolatile memory device and method of production of same Dec. 21, 1999

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